IL84683A - Ultra high-speed light activated microwave switch/modulator using photoreactive effect - Google Patents

Ultra high-speed light activated microwave switch/modulator using photoreactive effect

Info

Publication number
IL84683A
IL84683A IL8468387A IL8468387A IL84683A IL 84683 A IL84683 A IL 84683A IL 8468387 A IL8468387 A IL 8468387A IL 8468387 A IL8468387 A IL 8468387A IL 84683 A IL84683 A IL 84683A
Authority
IL
Israel
Prior art keywords
modulator
diode
ultra high
microwave switch
light activated
Prior art date
Application number
IL8468387A
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL84683A publication Critical patent/IL84683A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B2210/00Indexing scheme relating to optical transmission systems
    • H04B2210/006Devices for generating or processing an RF signal by optical means

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The RF/microwave switch/modulator uses an optically controlled diode (20). The reactance of the diode may be varied by varying the illumination intensity. In this fashion, the photodiode in conjunction with an external circuit can switch or modulate a microwave signal by varying the reactance of the diode using a laser light source or the like. The bias voltage may be varied to electronically tune the diode so that the microwave frequency of operation can be electronically controlled.
IL8468387A 1986-12-31 1987-12-02 Ultra high-speed light activated microwave switch/modulator using photoreactive effect IL84683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94833886A 1986-12-31 1986-12-31

Publications (1)

Publication Number Publication Date
IL84683A true IL84683A (en) 1993-01-14

Family

ID=25487685

Family Applications (1)

Application Number Title Priority Date Filing Date
IL8468387A IL84683A (en) 1986-12-31 1987-12-02 Ultra high-speed light activated microwave switch/modulator using photoreactive effect

Country Status (3)

Country Link
JP (1) JPH01501829A (en)
IL (1) IL84683A (en)
WO (1) WO1988005212A2 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3221272A (en) * 1962-02-22 1965-11-30 Hitachi Ltd Variable-capacitance diode modulator
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
JPS5310452B2 (en) * 1974-10-18 1978-04-13
US3976873A (en) * 1975-05-08 1976-08-24 The United States Of America As Represented By The Secretary Of The Navy Tunable electroabsorptive detector
JPH05333083A (en) * 1992-05-28 1993-12-17 Mitsubishi Electric Corp Automatic cable inspection device

Also Published As

Publication number Publication date
WO1988005212A3 (en) 1989-11-02
WO1988005212A2 (en) 1988-07-14
JPH01501829A (en) 1989-06-22

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Legal Events

Date Code Title Description
RH Patents void