IL84683A - Ultra high-speed light activated microwave switch/modulator using photoreactive effect - Google Patents
Ultra high-speed light activated microwave switch/modulator using photoreactive effectInfo
- Publication number
- IL84683A IL84683A IL8468387A IL8468387A IL84683A IL 84683 A IL84683 A IL 84683A IL 8468387 A IL8468387 A IL 8468387A IL 8468387 A IL8468387 A IL 8468387A IL 84683 A IL84683 A IL 84683A
- Authority
- IL
- Israel
- Prior art keywords
- modulator
- diode
- ultra high
- microwave switch
- light activated
- Prior art date
Links
- 238000005286 illumination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B2210/00—Indexing scheme relating to optical transmission systems
- H04B2210/006—Devices for generating or processing an RF signal by optical means
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Communication System (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The RF/microwave switch/modulator uses an optically controlled diode (20). The reactance of the diode may be varied by varying the illumination intensity. In this fashion, the photodiode in conjunction with an external circuit can switch or modulate a microwave signal by varying the reactance of the diode using a laser light source or the like. The bias voltage may be varied to electronically tune the diode so that the microwave frequency of operation can be electronically controlled.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94833886A | 1986-12-31 | 1986-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL84683A true IL84683A (en) | 1993-01-14 |
Family
ID=25487685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL8468387A IL84683A (en) | 1986-12-31 | 1987-12-02 | Ultra high-speed light activated microwave switch/modulator using photoreactive effect |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH01501829A (en) |
IL (1) | IL84683A (en) |
WO (1) | WO1988005212A2 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3221272A (en) * | 1962-02-22 | 1965-11-30 | Hitachi Ltd | Variable-capacitance diode modulator |
US3502884A (en) * | 1966-12-19 | 1970-03-24 | Rca Corp | Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer |
JPS5310452B2 (en) * | 1974-10-18 | 1978-04-13 | ||
US3976873A (en) * | 1975-05-08 | 1976-08-24 | The United States Of America As Represented By The Secretary Of The Navy | Tunable electroabsorptive detector |
JPH05333083A (en) * | 1992-05-28 | 1993-12-17 | Mitsubishi Electric Corp | Automatic cable inspection device |
-
1987
- 1987-12-02 IL IL8468387A patent/IL84683A/en not_active IP Right Cessation
- 1987-12-04 WO PCT/US1987/003209 patent/WO1988005212A2/en active IP Right Grant
- 1987-12-04 JP JP50095488A patent/JPH01501829A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1988005212A3 (en) | 1989-11-02 |
WO1988005212A2 (en) | 1988-07-14 |
JPH01501829A (en) | 1989-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RH | Patents void |