WO1988005212A3 - Ultra high-speed light activated microwave switch/modulator using photoreactive effect - Google Patents

Ultra high-speed light activated microwave switch/modulator using photoreactive effect Download PDF

Info

Publication number
WO1988005212A3
WO1988005212A3 PCT/US1987/003209 US8703209W WO8805212A3 WO 1988005212 A3 WO1988005212 A3 WO 1988005212A3 US 8703209 W US8703209 W US 8703209W WO 8805212 A3 WO8805212 A3 WO 8805212A3
Authority
WO
WIPO (PCT)
Prior art keywords
modulator
diode
ultra high
microwave switch
light activated
Prior art date
Application number
PCT/US1987/003209
Other languages
French (fr)
Other versions
WO1988005212A2 (en
Inventor
La Chapelle Michael De
Hui-Pin Hsu
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Priority to DE3789229T priority Critical patent/DE3789229T2/en
Publication of WO1988005212A2 publication Critical patent/WO1988005212A2/en
Publication of WO1988005212A3 publication Critical patent/WO1988005212A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B2210/00—Indexing scheme relating to optical transmission systems
    • H04B2210/006—Devices for generating or processing an RF signal by optical means

Abstract

The RF/microwave switch/modulator uses an optically controlled diode (20). The reactance of the diode may be varied by varying the illumination intensity. In this fashion, the photodiode in conjunction with an external circuit can switch or modulate a microwave signal by varying the reactance of the diode using a laser light source or the like. The bias voltage may be varied to electronically tune the diode so that the microwave frequency of operation can be electronically controlled.
PCT/US1987/003209 1986-12-31 1987-12-04 Ultra high-speed light activated microwave switch/modulator using photoreactive effect WO1988005212A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3789229T DE3789229T2 (en) 1986-12-31 1987-12-04 SUPER-FAST, LIGHT-EXCITED, MICROWAVE SWITCH / MODULATOR USING THE PHOTOREACTIVE EFFECT.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94833886A 1986-12-31 1986-12-31
US948,338 1986-12-31

Publications (2)

Publication Number Publication Date
WO1988005212A2 WO1988005212A2 (en) 1988-07-14
WO1988005212A3 true WO1988005212A3 (en) 1989-11-02

Family

ID=25487685

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1987/003209 WO1988005212A2 (en) 1986-12-31 1987-12-04 Ultra high-speed light activated microwave switch/modulator using photoreactive effect

Country Status (3)

Country Link
JP (1) JPH01501829A (en)
IL (1) IL84683A (en)
WO (1) WO1988005212A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3221272A (en) * 1962-02-22 1965-11-30 Hitachi Ltd Variable-capacitance diode modulator
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
US3976873A (en) * 1975-05-08 1976-08-24 The United States Of America As Represented By The Secretary Of The Navy Tunable electroabsorptive detector

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310452B2 (en) * 1974-10-18 1978-04-13
JPH05333083A (en) * 1992-05-28 1993-12-17 Mitsubishi Electric Corp Automatic cable inspection device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3221272A (en) * 1962-02-22 1965-11-30 Hitachi Ltd Variable-capacitance diode modulator
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
US3976873A (en) * 1975-05-08 1976-08-24 The United States Of America As Represented By The Secretary Of The Navy Tunable electroabsorptive detector

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
IEE Proceedings, vol. 132, part J, no. 2, April 1985 (Old Woking, GB) W. Platte: "Optoelectronic microwave switching", pages 126-132 *
IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, no. 5, May 1979 (New York, US) R.A. Kiehl: "An avalanching optoelectronic microwave switch", pages 533-539 *
Patent Abstracts of Japan, vol. 2, no. 68, 24 May 1978, page 2360 E 78; & JP-A-5333083 (NIPPON DENSHIN DENWA KOSHA) 28 March 1978 *
R.C.A. Review, vol. 46, no. 4, December 1985 ('Princeton, US) P.R. Herczfeld et al.: "Optically controlled microwave devices and circuits", pages 528-551 *
Solid-State Electronics, vol. 11, no. 2, February 1968, Pergamon Press, (Oxford, GB) T. Yamamoto et al.: "The gold n-type GaAs surface barrier diode and its application to photocapacitors", pages 219-224 *

Also Published As

Publication number Publication date
WO1988005212A2 (en) 1988-07-14
IL84683A (en) 1993-01-14
JPH01501829A (en) 1989-06-22

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