NL7515013A - Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler - Google Patents
Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction couplerInfo
- Publication number
- NL7515013A NL7515013A NL7515013A NL7515013A NL7515013A NL 7515013 A NL7515013 A NL 7515013A NL 7515013 A NL7515013 A NL 7515013A NL 7515013 A NL7515013 A NL 7515013A NL 7515013 A NL7515013 A NL 7515013A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- waveguide
- mesa
- direction coupler
- oscillator
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
Abstract
The optical integratd circuit concerns a semiconductor laser and has a waveguide with a multiple heterojunction. A mesa thin-layer oscillator (10) and passive or active optical elements are formed as a unit on the wave-guide (20) and connected to it via a direction coupler (21). At the wavelength of the laser emission to be transmitted the waveguide operates with negligible losses. Preferably the oscillator contains a gallium arsenide layer (11), Alz1-zAs layer (12), an active layer (13) of AlxGa1-x, an electrode (14) on the GaAs layer, and reflecting mirror surfaces (16,16a), which are formed on the oscillating and surfaces with intermediate insulating films (15,15a). The direction coupler contains an AlzGa1-z. As layer (21), an AlGaAsSb layer, or an InGaAs layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7515013A NL7515013A (en) | 1975-12-23 | 1975-12-23 | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7515013A NL7515013A (en) | 1975-12-23 | 1975-12-23 | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7515013A true NL7515013A (en) | 1977-06-27 |
Family
ID=19825087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7515013A NL7515013A (en) | 1975-12-23 | 1975-12-23 | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL7515013A (en) |
-
1975
- 1975-12-23 NL NL7515013A patent/NL7515013A/en not_active Application Discontinuation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3724926A (en) | Optical pulse modulator | |
| US5088096A (en) | Tunable power laser | |
| US3431437A (en) | Optical system for performing digital logic | |
| US3484713A (en) | Two-stage semiconductor coherent radiation source | |
| US3641459A (en) | Apparatus and method for narrowing the pulse width and stabilizing the repetition rate in semiconductor lasers exhibiting self-induced pulsing | |
| Koren et al. | Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth | |
| US3824493A (en) | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror | |
| FR2337449A1 (en) | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler | |
| US4112389A (en) | Diode laser with ring reflector | |
| NL7515013A (en) | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler | |
| Shams et al. | Monolithic integration of GaAs‐(GaAl) As light modulators and distributed‐Bragg‐reflector lasers | |
| EP0201687A3 (en) | Passive q-switched power laser resonator | |
| EP0060033A1 (en) | Improvements in or relating to laser light sources | |
| Eisenstein et al. | Active mode-locking of an InGaAsP 1.55 μm laser in a fibre resonator with an integrated single-mode-fibre output port | |
| JPS60207389A (en) | Semiconductor laser device | |
| JPH0595152A (en) | Semiconductor short optical pulse generator and generating method for short optical pulse | |
| JPS6425587A (en) | Integrated semiconductor laser | |
| US3431438A (en) | Optical computer comprising semiconductor p-n junction components | |
| JPS6477188A (en) | Semiconductor laser | |
| JPS6411388A (en) | Method and apparatus for converting semiconductor laser wavelength | |
| GB1095446A (en) | ||
| JPS648690A (en) | External resonator type semiconductor laser device | |
| JPS57143887A (en) | Semiconductor laser | |
| JPS6425588A (en) | Integrated semiconductor laser | |
| Yurek et al. | Optical and electronic reduction of Rayleigh backscatter noise in fibre-coupled semiconductor diode lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |