ES2056003T3 - Laser semiconductor de doble canal y su procedimiento de realizacion. - Google Patents
Laser semiconductor de doble canal y su procedimiento de realizacion.Info
- Publication number
- ES2056003T3 ES2056003T3 ES92111883T ES92111883T ES2056003T3 ES 2056003 T3 ES2056003 T3 ES 2056003T3 ES 92111883 T ES92111883 T ES 92111883T ES 92111883 T ES92111883 T ES 92111883T ES 2056003 T3 ES2056003 T3 ES 2056003T3
- Authority
- ES
- Spain
- Prior art keywords
- realization
- procedure
- semiconductor laser
- channel semiconductor
- double channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
LA CORRIENTE DE ALIMENTACION DE UN LASER DE FOSFURO DE INDIO O ARSENIURO DE GALIO ESTA CONFINADO EN UNA CINTA LASER (14A) POR DOS MEDIOS. UN MEDIO DE BLOQUEO DE CORRIENTE CERCANA Y CONSTITUIDO POR UNA UNION BLOQUEANTE (JB) FORMADA EN DOS CANALES LATERALES (CL) QUE DELIMITAN ESTA CINTA. UN MEDIO DE BLOQUEO DE CORRIENTE ALEJADA ESTA CONSTITUIDA POR UNA CAPA SEMIAISLANTE (24) IMPURIFICADA CON HIERRO Y DEPOSITADA EPITAXIALMENTE ANTES DEL GRABADO DE LOS CANALES LATERALES. LA INVENCION SE APLICA PARTICULARMENTE EN LA REALIZACION DE LOS LASERES DE BOMBEO UTILIZADOS EN LOS AMPLIFICADORES OPTICOS DE LAS CONEXIONES DE FIBRAS OPTICAS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9109178A FR2679388B1 (fr) | 1991-07-19 | 1991-07-19 | Laser semi-conducteur a double canal et son procede de realisation. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2056003T3 true ES2056003T3 (es) | 1994-09-01 |
Family
ID=9415336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92111883T Expired - Lifetime ES2056003T3 (es) | 1991-07-19 | 1992-07-13 | Laser semiconductor de doble canal y su procedimiento de realizacion. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5278858A (es) |
EP (1) | EP0523587B1 (es) |
JP (1) | JPH07114309B2 (es) |
AT (1) | ATE106169T1 (es) |
CA (1) | CA2073885C (es) |
DE (1) | DE69200147T2 (es) |
ES (1) | ES2056003T3 (es) |
FR (1) | FR2679388B1 (es) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0639875A1 (en) * | 1993-07-12 | 1995-02-22 | BRITISH TELECOMMUNICATIONS public limited company | Electrical barrier structure for semiconductor device |
JPH07288361A (ja) * | 1994-04-18 | 1995-10-31 | Nec Kansai Ltd | 半導体レーザ及びその製造方法 |
KR970054972A (ko) * | 1995-12-29 | 1997-07-31 | 김주용 | 레이저 다이오드 제조방법 |
US5956360A (en) * | 1997-03-28 | 1999-09-21 | Lucent Technologies Inc. | Uncooled lasers with reduced low bias capacitance effect |
JP2003060309A (ja) * | 2001-08-21 | 2003-02-28 | Sumitomo Electric Ind Ltd | 半導体レーザ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58110085A (ja) * | 1981-12-23 | 1983-06-30 | Nec Corp | 埋め込み形半導体レ−ザ |
JPS59125684A (ja) * | 1983-01-06 | 1984-07-20 | Nec Corp | 埋め込み形半導体レ−ザ |
NL8401172A (nl) * | 1984-04-12 | 1985-11-01 | Philips Nv | Halfgeleiderlaser. |
JPS6346790A (ja) * | 1986-08-15 | 1988-02-27 | Nec Corp | 埋込み型半導体レ−ザおよびその製造方法 |
NL8603009A (nl) * | 1986-11-27 | 1988-06-16 | Philips Nv | Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. |
JPH0666526B2 (ja) * | 1988-07-28 | 1994-08-24 | 関西日本電気株式会社 | 半導体レーザダイオードとその製造方法 |
US4947400A (en) * | 1989-06-26 | 1990-08-07 | At&T Bell Laboratories | Laser-photodetector assemblage |
JPH03203282A (ja) * | 1989-12-29 | 1991-09-04 | Nec Kansai Ltd | 半導体レーザダイオード |
-
1991
- 1991-07-19 FR FR9109178A patent/FR2679388B1/fr not_active Expired - Fee Related
-
1992
- 1992-07-13 ES ES92111883T patent/ES2056003T3/es not_active Expired - Lifetime
- 1992-07-13 AT AT92111883T patent/ATE106169T1/de not_active IP Right Cessation
- 1992-07-13 DE DE69200147T patent/DE69200147T2/de not_active Expired - Fee Related
- 1992-07-13 EP EP92111883A patent/EP0523587B1/fr not_active Expired - Lifetime
- 1992-07-15 CA CA002073885A patent/CA2073885C/fr not_active Expired - Fee Related
- 1992-07-17 JP JP4191153A patent/JPH07114309B2/ja not_active Expired - Fee Related
- 1992-07-20 US US07/915,512 patent/US5278858A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5278858A (en) | 1994-01-11 |
DE69200147T2 (de) | 1994-09-08 |
ATE106169T1 (de) | 1994-06-15 |
CA2073885C (fr) | 1996-07-30 |
DE69200147D1 (de) | 1994-06-30 |
FR2679388A1 (fr) | 1993-01-22 |
CA2073885A1 (fr) | 1993-01-20 |
FR2679388B1 (fr) | 1995-02-10 |
EP0523587A1 (fr) | 1993-01-20 |
EP0523587B1 (fr) | 1994-05-25 |
JPH07114309B2 (ja) | 1995-12-06 |
JPH05206576A (ja) | 1993-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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