DE69204432D1 - Optisches Halbleiterbauelement mit einer grösseren Ausgangsfeldfleckverteilung und sein Herstellungsverfahren. - Google Patents

Optisches Halbleiterbauelement mit einer grösseren Ausgangsfeldfleckverteilung und sein Herstellungsverfahren.

Info

Publication number
DE69204432D1
DE69204432D1 DE69204432T DE69204432T DE69204432D1 DE 69204432 D1 DE69204432 D1 DE 69204432D1 DE 69204432 T DE69204432 T DE 69204432T DE 69204432 T DE69204432 T DE 69204432T DE 69204432 D1 DE69204432 D1 DE 69204432D1
Authority
DE
Germany
Prior art keywords
mode
manufacturing process
optical semiconductor
semiconductor component
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69204432T
Other languages
English (en)
Other versions
DE69204432T2 (de
Inventor
Pierre Doussiere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Publication of DE69204432D1 publication Critical patent/DE69204432D1/de
Application granted granted Critical
Publication of DE69204432T2 publication Critical patent/DE69204432T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
DE69204432T 1991-12-04 1992-12-03 Optisches Halbleiterbauelement mit einer grösseren Ausgangsfeldfleckverteilung und sein Herstellungsverfahren. Expired - Lifetime DE69204432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115040A FR2684823B1 (fr) 1991-12-04 1991-12-04 Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.

Publications (2)

Publication Number Publication Date
DE69204432D1 true DE69204432D1 (de) 1995-10-05
DE69204432T2 DE69204432T2 (de) 1996-02-22

Family

ID=9419673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69204432T Expired - Lifetime DE69204432T2 (de) 1991-12-04 1992-12-03 Optisches Halbleiterbauelement mit einer grösseren Ausgangsfeldfleckverteilung und sein Herstellungsverfahren.

Country Status (9)

Country Link
US (1) US5278926A (de)
EP (1) EP0545820B1 (de)
JP (1) JP3202082B2 (de)
AT (1) ATE127288T1 (de)
CA (1) CA2084355A1 (de)
DE (1) DE69204432T2 (de)
ES (1) ES2076018T3 (de)
FR (1) FR2684823B1 (de)
NO (1) NO308817B1 (de)

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US5351323A (en) * 1993-11-08 1994-09-27 Corning Incorporated Optical fiber for coupling to elliptically-shaped source
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US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
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US6339606B1 (en) * 1998-06-16 2002-01-15 Princeton Lightwave, Inc. High power semiconductor light source
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
US6829276B1 (en) 1999-10-22 2004-12-07 Trumpf Photonics, Inc. Integrated high power semiconductor laser
US6293688B1 (en) 1999-11-12 2001-09-25 Sparkolor Corporation Tapered optical waveguide coupler
US6341189B1 (en) 1999-11-12 2002-01-22 Sparkolor Corporation Lenticular structure for integrated waveguides
GB2366394A (en) 2000-08-11 2002-03-06 Kymata Ltd Integrated optical device with cladding having mesa formation
US6498873B1 (en) 2000-08-31 2002-12-24 Agere Systems Inc. Photo detector assembly
JP2002107681A (ja) * 2000-09-29 2002-04-10 Fujitsu Quantum Devices Ltd 光半導体装置
US7068870B2 (en) 2000-10-26 2006-06-27 Shipley Company, L.L.C. Variable width waveguide for mode-matching and method for making
US6987919B2 (en) * 2000-12-14 2006-01-17 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
US7251406B2 (en) * 2000-12-14 2007-07-31 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
US7158701B2 (en) * 2001-02-21 2007-01-02 Shipley Company, L.L.C. Method for making optical devices with a moving mask and optical devices made thereby
EP1245971B1 (de) 2001-03-29 2003-12-17 Interuniversitair Microelektronica Centrum Vzw Sich verjüngender Wellenleiter (Taper) mit lateralen strahlbegrenzenden Rippenwellenleitern
US6912345B2 (en) * 2001-03-30 2005-06-28 Shipley Company, L.L.C. Tapered optical fiber for coupling to diffused optical waveguides
US6614965B2 (en) 2001-05-11 2003-09-02 Lightcross, Inc. Efficient coupling of optical fiber to optical component
US6993224B1 (en) 2001-11-15 2006-01-31 UNIVERSITé LAVAL Segmented waveguide array gratings (SWAG)-based archival optical memory
WO2003042737A2 (en) * 2001-11-15 2003-05-22 UNIVERSITé LAVAL Array grating filters as segmented waveguide
ITMI20020267A1 (it) * 2002-02-12 2003-08-12 Bavelloni Z Spa Macchina automatica per la lavorazione di materiali in lastra in particolare lastre di vetro
FR2836724B1 (fr) * 2002-03-01 2004-07-23 Silios Technologies Adaptateur de mode optique pourvu de deux canaux distincts
US6921490B1 (en) 2002-09-06 2005-07-26 Kotura, Inc. Optical component having waveguides extending from a common region
US7190852B2 (en) * 2002-10-15 2007-03-13 Covega Corporation Semiconductor devices with curved waveguides and mode transformers
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US20050185893A1 (en) * 2004-02-20 2005-08-25 Ansheng Liu Method and apparatus for tapering an optical waveguide
US7164838B2 (en) * 2005-02-15 2007-01-16 Xponent Photonics Inc Multiple-core planar optical waveguides and methods of fabrication and use thereof
EP1866955A4 (de) * 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
FR2909491B1 (fr) * 2006-12-05 2010-04-23 Commissariat Energie Atomique Dispositif laser a source laser et guide d'onde couples
CN101641622B (zh) * 2007-03-20 2011-09-14 日本电气株式会社 光波导和使用该光波导的光斑尺寸转换器
KR100958338B1 (ko) * 2007-12-18 2010-05-17 한국전자통신연구원 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저
US8320721B2 (en) 2008-02-29 2012-11-27 Google Inc. Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide
WO2009106139A1 (en) * 2008-02-29 2009-09-03 Pirelli & C. S.P.A. Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide
US8078020B2 (en) * 2008-04-08 2011-12-13 Alcatel Lucent Optical mode-converter structure
JP6315600B2 (ja) * 2015-03-12 2018-04-25 日本電信電話株式会社 半導体光素子
WO2017015578A1 (en) 2015-07-22 2017-01-26 Miroslaw Florjanczyk Compound semiconductor photonic integrated circuit with dielectric waveguide
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
CN111684342B (zh) * 2018-02-08 2023-07-28 古河电气工业株式会社 光集成元件以及光模块
JP6981291B2 (ja) * 2018-02-14 2021-12-15 住友電気工業株式会社 ハイブリッド光装置、ハイブリッド光装置を作製する方法

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Also Published As

Publication number Publication date
NO308817B1 (no) 2000-10-30
FR2684823A1 (fr) 1993-06-11
ATE127288T1 (de) 1995-09-15
FR2684823B1 (fr) 1994-01-21
EP0545820A1 (de) 1993-06-09
DE69204432T2 (de) 1996-02-22
JPH05243679A (ja) 1993-09-21
JP3202082B2 (ja) 2001-08-27
NO924648D0 (no) 1992-12-02
NO924648L (no) 1993-06-07
US5278926A (en) 1994-01-11
CA2084355A1 (fr) 1993-06-05
ES2076018T3 (es) 1995-10-16
EP0545820B1 (de) 1995-08-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ALCATEL, PARIS, FR

8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US