DE69132982T2 - Reaktor mit Strahlungsheizung - Google Patents

Reaktor mit Strahlungsheizung

Info

Publication number
DE69132982T2
DE69132982T2 DE69132982T DE69132982T DE69132982T2 DE 69132982 T2 DE69132982 T2 DE 69132982T2 DE 69132982 T DE69132982 T DE 69132982T DE 69132982 T DE69132982 T DE 69132982T DE 69132982 T2 DE69132982 T2 DE 69132982T2
Authority
DE
Germany
Prior art keywords
radiant heating
heating reactor
reactor
radiant
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132982T
Other languages
English (en)
Other versions
DE69132982D1 (de
Inventor
Roger N Anderson
Thomas E Deacon
David K Carlson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69132982D1 publication Critical patent/DE69132982D1/de
Application granted granted Critical
Publication of DE69132982T2 publication Critical patent/DE69132982T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
DE69132982T 1990-08-16 1991-08-14 Reaktor mit Strahlungsheizung Expired - Fee Related DE69132982T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56839390A 1990-08-16 1990-08-16
US07/651,668 US5179677A (en) 1990-08-16 1991-02-06 Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity

Publications (2)

Publication Number Publication Date
DE69132982D1 DE69132982D1 (de) 2002-05-08
DE69132982T2 true DE69132982T2 (de) 2002-11-21

Family

ID=27074774

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69130662T Expired - Fee Related DE69130662T2 (de) 1990-08-16 1991-08-14 Vorrichtung und Verfahren zum Heizen von Substraten in der Halbleiterherstellung
DE69132982T Expired - Fee Related DE69132982T2 (de) 1990-08-16 1991-08-14 Reaktor mit Strahlungsheizung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69130662T Expired - Fee Related DE69130662T2 (de) 1990-08-16 1991-08-14 Vorrichtung und Verfahren zum Heizen von Substraten in der Halbleiterherstellung

Country Status (5)

Country Link
US (1) US5179677A (de)
EP (2) EP0476307B1 (de)
JP (1) JP2601957B2 (de)
KR (1) KR100217486B1 (de)
DE (2) DE69130662T2 (de)

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US6500734B2 (en) 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
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US5870526A (en) * 1997-07-17 1999-02-09 Steag-Ast Inflatable elastomeric element for rapid thermal processing (RTP) system
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US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6122440A (en) * 1999-01-27 2000-09-19 Regents Of The University Of Minnesota Optical heating device for rapid thermal processing (RTP) system
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
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US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6259072B1 (en) 1999-11-09 2001-07-10 Axcelis Technologies, Inc. Zone controlled radiant heating system utilizing focused reflector
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6476362B1 (en) 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6923821B2 (en) * 2001-02-28 2005-08-02 Theodore Wortrich Microkeratome blades and methods of making
US6600138B2 (en) * 2001-04-17 2003-07-29 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
US6778762B1 (en) * 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US20040040509A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing etchant condensation on wafer in a cooling chamber
EP1568068A1 (de) 2002-11-22 2005-08-31 Applied Materials, Inc. Rückseitenheizkammer
US7169233B2 (en) * 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
KR100621777B1 (ko) * 2005-05-04 2006-09-15 삼성전자주식회사 기판 열처리 장치
US7718225B2 (en) * 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
US7691203B2 (en) * 2006-01-27 2010-04-06 Air Water Inc. Film forming apparatus
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US7741200B2 (en) 2006-12-01 2010-06-22 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US20080132039A1 (en) * 2006-12-01 2008-06-05 Yonah Cho Formation and treatment of epitaxial layer containing silicon and carbon
US7897495B2 (en) 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US8394196B2 (en) 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8055054B2 (en) * 2006-12-15 2011-11-08 General Electric Company Method and apparatus for thermographic nondestructive evaluation of an object
US9064960B2 (en) 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
JP5402657B2 (ja) * 2010-01-14 2014-01-29 株式会社Ｓｕｍｃｏ エピタキシャル成長装置
JP5807522B2 (ja) * 2011-11-17 2015-11-10 信越半導体株式会社 エピタキシャル成長装置
US9277595B2 (en) * 2012-02-24 2016-03-01 Applied Materials, Inc. Heating lamp having base to facilitate reduced air flow about the heating lamp
US9029739B2 (en) 2012-05-30 2015-05-12 Applied Materials, Inc. Apparatus and methods for rapid thermal processing
JP2014060219A (ja) * 2012-09-14 2014-04-03 Shin Etsu Handotai Co Ltd エピタキシャル成長装置
US9048268B2 (en) * 2013-03-05 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and equipment for removing photoresist residue after dry etch
US9500611B2 (en) 2013-09-26 2016-11-22 General Electric Company Lamp assembly for a thermographic nondestructive evaluation system
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN104362076B (zh) * 2014-09-23 2017-04-19 北京七星华创电子股份有限公司 半导体设备的温度控制装置、控制系统及其控制方法
JP6820866B2 (ja) * 2015-05-29 2021-01-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ リフレクタを有する処理チャンバ
KR20170016562A (ko) 2015-08-03 2017-02-14 삼성전자주식회사 박막 증착 장치
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US10727094B2 (en) * 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
JP6847199B2 (ja) 2016-07-22 2021-03-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピの均一性調整を改善するための加熱変調器
CN107841728A (zh) * 2017-12-13 2018-03-27 北京创昱科技有限公司 一种红外加热灯管装置

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Also Published As

Publication number Publication date
EP0872574B1 (de) 2002-04-03
DE69130662T2 (de) 1999-09-09
KR920005254A (ko) 1992-03-28
JP2601957B2 (ja) 1997-04-23
KR100217486B1 (ko) 1999-09-01
US5179677A (en) 1993-01-12
EP0476307A1 (de) 1992-03-25
EP0872574A3 (de) 1998-11-25
DE69130662D1 (de) 1999-02-04
EP0476307B1 (de) 1998-12-23
EP0872574A2 (de) 1998-10-21
JPH04255214A (ja) 1992-09-10
DE69132982D1 (de) 2002-05-08

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee