DE69130662T2 - Vorrichtung und Verfahren zum Heizen von Substraten in der Halbleiterherstellung - Google Patents
Vorrichtung und Verfahren zum Heizen von Substraten in der HalbleiterherstellungInfo
- Publication number
- DE69130662T2 DE69130662T2 DE69130662T DE69130662T DE69130662T2 DE 69130662 T2 DE69130662 T2 DE 69130662T2 DE 69130662 T DE69130662 T DE 69130662T DE 69130662 T DE69130662 T DE 69130662T DE 69130662 T2 DE69130662 T2 DE 69130662T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor production
- heating substrates
- substrates
- heating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56839390A | 1990-08-16 | 1990-08-16 | |
US07/651,668 US5179677A (en) | 1990-08-16 | 1991-02-06 | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69130662D1 DE69130662D1 (de) | 1999-02-04 |
DE69130662T2 true DE69130662T2 (de) | 1999-09-09 |
Family
ID=27074774
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130662T Expired - Fee Related DE69130662T2 (de) | 1990-08-16 | 1991-08-14 | Vorrichtung und Verfahren zum Heizen von Substraten in der Halbleiterherstellung |
DE69132982T Expired - Fee Related DE69132982T2 (de) | 1990-08-16 | 1991-08-14 | Reaktor mit Strahlungsheizung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132982T Expired - Fee Related DE69132982T2 (de) | 1990-08-16 | 1991-08-14 | Reaktor mit Strahlungsheizung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5179677A (de) |
EP (2) | EP0476307B1 (de) |
JP (1) | JP2601957B2 (de) |
KR (1) | KR100217486B1 (de) |
DE (2) | DE69130662T2 (de) |
Families Citing this family (86)
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---|---|---|---|---|
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
JP2973611B2 (ja) * | 1991-06-26 | 1999-11-08 | キヤノン株式会社 | 光励起プロセス装置及びそれを用いた半導体デバイスの製造方法 |
US5268989A (en) * | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5820686A (en) * | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5592581A (en) * | 1993-07-19 | 1997-01-07 | Tokyo Electron Kabushiki Kaisha | Heat treatment apparatus |
EP0636704B1 (de) * | 1993-07-30 | 1999-11-03 | Applied Materials, Inc. | Ablagerung des Siliziumnitrids |
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
US6500734B2 (en) | 1993-07-30 | 2002-12-31 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
US5650082A (en) * | 1993-10-29 | 1997-07-22 | Applied Materials, Inc. | Profiled substrate heating |
US5444815A (en) * | 1993-12-16 | 1995-08-22 | Texas Instruments Incorporated | Multi-zone lamp interference correction system |
US5452396A (en) * | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
US5467220A (en) * | 1994-02-18 | 1995-11-14 | Applied Materials, Inc. | Method and apparatus for improving semiconductor wafer surface temperature uniformity |
US5551982A (en) * | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
GB9412918D0 (en) * | 1994-06-28 | 1994-08-17 | Baxendine Alar R | Apparatus for uniformly heating a substrate |
JPH08316154A (ja) * | 1995-02-23 | 1996-11-29 | Applied Materials Inc | 疑似ホットウォール反応チャンバ |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
WO1997008356A2 (en) * | 1995-08-18 | 1997-03-06 | The Regents Of The University Of California | Modified metalorganic chemical vapor deposition of group iii-v thin layers |
US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
WO1997009737A1 (en) | 1995-09-01 | 1997-03-13 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
JP3972379B2 (ja) * | 1995-12-14 | 2007-09-05 | 信越半導体株式会社 | 加熱炉 |
US5751896A (en) | 1996-02-22 | 1998-05-12 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
JP3504436B2 (ja) * | 1996-06-10 | 2004-03-08 | 大日本スクリーン製造株式会社 | 基板の枚葉式熱処理装置 |
US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
US5793022A (en) * | 1996-09-12 | 1998-08-11 | Applied Materials, Inc. | Adaptive temperture controller and method of operation |
US5889258A (en) * | 1996-12-12 | 1999-03-30 | Lubomirski; Dimitri | High temperature heating apparatus |
US5960158A (en) | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US5870526A (en) * | 1997-07-17 | 1999-02-09 | Steag-Ast | Inflatable elastomeric element for rapid thermal processing (RTP) system |
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US6221155B1 (en) | 1997-12-15 | 2001-04-24 | Advanced Silicon Materials, Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US6064799A (en) * | 1998-04-30 | 2000-05-16 | Applied Materials, Inc. | Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature |
US5970214A (en) | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US5930456A (en) | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
US6406543B1 (en) * | 1998-07-23 | 2002-06-18 | Applied Materials, Inc. | Infra-red transparent thermal reactor cover member |
US6023555A (en) * | 1998-08-17 | 2000-02-08 | Eaton Corporation | Radiant heating apparatus and method |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6122440A (en) * | 1999-01-27 | 2000-09-19 | Regents Of The University Of Minnesota | Optical heating device for rapid thermal processing (RTP) system |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
JP2000286200A (ja) | 1999-03-31 | 2000-10-13 | Kokusai Electric Co Ltd | 熱処理方法および熱処理装置 |
US6383330B1 (en) | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
US6259072B1 (en) | 1999-11-09 | 2001-07-10 | Axcelis Technologies, Inc. | Zone controlled radiant heating system utilizing focused reflector |
US6666924B1 (en) | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
US6970644B2 (en) * | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US7015422B2 (en) * | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6923821B2 (en) * | 2001-02-28 | 2005-08-02 | Theodore Wortrich | Microkeratome blades and methods of making |
US6600138B2 (en) * | 2001-04-17 | 2003-07-29 | Mattson Technology, Inc. | Rapid thermal processing system for integrated circuits |
US6778762B1 (en) * | 2002-04-17 | 2004-08-17 | Novellus Systems, Inc. | Sloped chamber top for substrate processing |
US20040040509A1 (en) * | 2002-09-04 | 2004-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for preventing etchant condensation on wafer in a cooling chamber |
EP1568068A1 (de) | 2002-11-22 | 2005-08-31 | Applied Materials, Inc. | Rückseitenheizkammer |
US7169233B2 (en) * | 2003-11-21 | 2007-01-30 | Asm America, Inc. | Reactor chamber |
US7396743B2 (en) * | 2004-06-10 | 2008-07-08 | Singh Kaushal K | Low temperature epitaxial growth of silicon-containing films using UV radiation |
KR100621777B1 (ko) * | 2005-05-04 | 2006-09-15 | 삼성전자주식회사 | 기판 열처리 장치 |
US7718225B2 (en) * | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
US7709391B2 (en) * | 2006-01-20 | 2010-05-04 | Applied Materials, Inc. | Methods for in-situ generation of reactive etch and growth specie in film formation processes |
US7691203B2 (en) * | 2006-01-27 | 2010-04-06 | Air Water Inc. | Film forming apparatus |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US20080132039A1 (en) * | 2006-12-01 | 2008-06-05 | Yonah Cho | Formation and treatment of epitaxial layer containing silicon and carbon |
US7741200B2 (en) | 2006-12-01 | 2010-06-22 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
US8394196B2 (en) | 2006-12-12 | 2013-03-12 | Applied Materials, Inc. | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
US7897495B2 (en) | 2006-12-12 | 2011-03-01 | Applied Materials, Inc. | Formation of epitaxial layer containing silicon and carbon |
US7960236B2 (en) | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
US8055054B2 (en) * | 2006-12-15 | 2011-11-08 | General Electric Company | Method and apparatus for thermographic nondestructive evaluation of an object |
US9064960B2 (en) | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
JP5402657B2 (ja) * | 2010-01-14 | 2014-01-29 | 株式会社Sumco | エピタキシャル成長装置 |
JP5807522B2 (ja) * | 2011-11-17 | 2015-11-10 | 信越半導体株式会社 | エピタキシャル成長装置 |
JP6230073B2 (ja) * | 2012-02-24 | 2017-11-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加熱ランプのまわりの空気流の減少を容易にするための基部を有する加熱ランプ |
WO2013181263A1 (en) * | 2012-05-30 | 2013-12-05 | Applied Materials, Inc. | Apparatus and methods for rapid thermal processing |
JP2014060219A (ja) * | 2012-09-14 | 2014-04-03 | Shin Etsu Handotai Co Ltd | エピタキシャル成長装置 |
US9048268B2 (en) * | 2013-03-05 | 2015-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and equipment for removing photoresist residue after dry etch |
US9500611B2 (en) | 2013-09-26 | 2016-11-22 | General Electric Company | Lamp assembly for a thermographic nondestructive evaluation system |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
CN104362076B (zh) * | 2014-09-23 | 2017-04-19 | 北京七星华创电子股份有限公司 | 半导体设备的温度控制装置、控制系统及其控制方法 |
JP6820866B2 (ja) * | 2015-05-29 | 2021-01-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | リフレクタを有する処理チャンバ |
US10932323B2 (en) | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
KR20170016562A (ko) | 2015-08-03 | 2017-02-14 | 삼성전자주식회사 | 박막 증착 장치 |
US10727094B2 (en) * | 2016-01-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal reflector device for semiconductor fabrication tool |
JP6847199B2 (ja) | 2016-07-22 | 2021-03-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | エピの均一性調整を改善するための加熱変調器 |
CN107841728A (zh) * | 2017-12-13 | 2018-03-27 | 北京创昱科技有限公司 | 一种红外加热灯管装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4101759A (en) * | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
US4446358A (en) * | 1981-12-15 | 1984-05-01 | Cooper Industries, Inc. | Preheater for use in mass soldering apparatus |
US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
JPS5936927A (ja) * | 1982-08-25 | 1984-02-29 | Hitachi Ltd | 半導体気相成長装置 |
US4545327A (en) * | 1982-08-27 | 1985-10-08 | Anicon, Inc. | Chemical vapor deposition apparatus |
JPS5959876A (ja) * | 1982-09-30 | 1984-04-05 | Ushio Inc | 光照射炉の運転方法 |
US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
JPS6260221A (ja) * | 1985-09-10 | 1987-03-16 | Matsushita Electric Ind Co Ltd | 赤外線加熱装置 |
US4789771A (en) * | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US4755654A (en) * | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
US4823735A (en) * | 1987-05-12 | 1989-04-25 | Gemini Research, Inc. | Reflector apparatus for chemical vapor deposition reactors |
US4836138A (en) * | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
-
1991
- 1991-02-06 US US07/651,668 patent/US5179677A/en not_active Expired - Lifetime
- 1991-08-13 JP JP3202705A patent/JP2601957B2/ja not_active Expired - Fee Related
- 1991-08-14 EP EP91113674A patent/EP0476307B1/de not_active Expired - Lifetime
- 1991-08-14 DE DE69130662T patent/DE69130662T2/de not_active Expired - Fee Related
- 1991-08-14 EP EP98110339A patent/EP0872574B1/de not_active Expired - Lifetime
- 1991-08-14 DE DE69132982T patent/DE69132982T2/de not_active Expired - Fee Related
- 1991-08-16 KR KR1019910014115A patent/KR100217486B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0872574A3 (de) | 1998-11-25 |
DE69132982T2 (de) | 2002-11-21 |
JP2601957B2 (ja) | 1997-04-23 |
EP0476307A1 (de) | 1992-03-25 |
US5179677A (en) | 1993-01-12 |
EP0476307B1 (de) | 1998-12-23 |
DE69132982D1 (de) | 2002-05-08 |
EP0872574B1 (de) | 2002-04-03 |
KR920005254A (ko) | 1992-03-28 |
EP0872574A2 (de) | 1998-10-21 |
JPH04255214A (ja) | 1992-09-10 |
DE69130662D1 (de) | 1999-02-04 |
KR100217486B1 (ko) | 1999-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: ZIMMERMANN & PARTNER, 80331 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |