DE69128173D1 - Redundante Halbleiterspeicheranordnung - Google Patents

Redundante Halbleiterspeicheranordnung

Info

Publication number
DE69128173D1
DE69128173D1 DE69128173T DE69128173T DE69128173D1 DE 69128173 D1 DE69128173 D1 DE 69128173D1 DE 69128173 T DE69128173 T DE 69128173T DE 69128173 T DE69128173 T DE 69128173T DE 69128173 D1 DE69128173 D1 DE 69128173D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
redundant semiconductor
redundant
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128173T
Other languages
English (en)
Other versions
DE69128173T2 (de
Inventor
Hugh P Mcadams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69128173D1 publication Critical patent/DE69128173D1/de
Publication of DE69128173T2 publication Critical patent/DE69128173T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
DE1991628173 1990-07-31 1991-07-31 Redundante Halbleiterspeicheranordnung Expired - Fee Related DE69128173T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56072090A 1990-07-31 1990-07-31

Publications (2)

Publication Number Publication Date
DE69128173D1 true DE69128173D1 (de) 1997-12-18
DE69128173T2 DE69128173T2 (de) 1998-05-14

Family

ID=24239068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991628173 Expired - Fee Related DE69128173T2 (de) 1990-07-31 1991-07-31 Redundante Halbleiterspeicheranordnung

Country Status (2)

Country Link
EP (1) EP0469571B1 (de)
DE (1) DE69128173T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000275B1 (ko) * 1992-05-06 1995-01-12 삼성전자 주식회사 반도체 메모리 장치의 컬럼 리던던시
JP2734315B2 (ja) * 1992-09-24 1998-03-30 日本電気株式会社 半導体メモリ装置
KR102491534B1 (ko) * 2018-02-26 2023-01-26 에스케이하이닉스 주식회사 반도체 메모리 장치
CN112447222B (zh) * 2019-09-03 2024-01-12 华邦电子股份有限公司 存储器装置及其更新方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置

Also Published As

Publication number Publication date
DE69128173T2 (de) 1998-05-14
EP0469571B1 (de) 1997-11-12
EP0469571A2 (de) 1992-02-05
EP0469571A3 (en) 1992-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee