DE69119989D1 - CVD-Anlage und Verfahren zum Herstellen geglühter Filme - Google Patents
CVD-Anlage und Verfahren zum Herstellen geglühter FilmeInfo
- Publication number
- DE69119989D1 DE69119989D1 DE69119989T DE69119989T DE69119989D1 DE 69119989 D1 DE69119989 D1 DE 69119989D1 DE 69119989 T DE69119989 T DE 69119989T DE 69119989 T DE69119989 T DE 69119989T DE 69119989 D1 DE69119989 D1 DE 69119989D1
- Authority
- DE
- Germany
- Prior art keywords
- cvd system
- annealed films
- producing annealed
- producing
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19210090 | 1990-07-20 | ||
JP3080688A JP2892170B2 (ja) | 1990-07-20 | 1991-03-19 | 熱処理成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119989D1 true DE69119989D1 (de) | 1996-07-11 |
DE69119989T2 DE69119989T2 (de) | 1996-11-28 |
Family
ID=26421661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119989T Revoked DE69119989T2 (de) | 1990-07-20 | 1991-07-19 | CVD-Anlage und Verfahren zum Herstellen geglühter Filme |
Country Status (5)
Country | Link |
---|---|
US (1) | US5589421A (de) |
EP (1) | EP0467392B1 (de) |
JP (1) | JP2892170B2 (de) |
KR (1) | KR940010514B1 (de) |
DE (1) | DE69119989T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0552375B1 (de) * | 1991-07-16 | 2004-06-02 | Seiko Epson Corporation | Verfahren zur herstellung einer halbleiter-dünnschicht mit einer chemischen gasphasen-beschichtungsanlage |
US5855677A (en) * | 1994-09-30 | 1999-01-05 | Applied Materials, Inc. | Method and apparatus for controlling the temperature of reaction chamber walls |
CA2172233C (en) * | 1995-03-20 | 2001-01-02 | Lei Zhong | Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
ATE312955T1 (de) * | 1996-05-21 | 2005-12-15 | Applied Materials Inc | Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand |
JPH113861A (ja) * | 1997-06-12 | 1999-01-06 | Sony Corp | 半導体装置の製造方法及びその装置 |
US6183562B1 (en) * | 1997-12-23 | 2001-02-06 | Sony Corporation Of Japan | Thermal protection system for a chemical vapor deposition machine |
US6352430B1 (en) * | 1998-10-23 | 2002-03-05 | Goodrich Corporation | Method and apparatus for cooling a CVI/CVD furnace |
KR100480904B1 (ko) * | 1998-12-24 | 2005-08-30 | 주식회사 하이닉스반도체 | 반응로및이를이용한단결정실리콘층형성방법 |
EP1063319B1 (de) | 1999-06-04 | 2005-12-07 | Goodrich Corporation | Verfahren und Vorrichtung zum Kühlen von einem CVI/CVD-Ofen |
US6261853B1 (en) * | 2000-02-07 | 2001-07-17 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
US6861619B1 (en) | 2000-02-07 | 2005-03-01 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
KR100345304B1 (ko) * | 2000-10-12 | 2002-07-25 | 한국전자통신연구원 | 수직형 초고진공 화학증착장치 |
US7418982B2 (en) * | 2006-05-17 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier and facility interface and apparatus including same |
JP4829013B2 (ja) * | 2006-06-14 | 2011-11-30 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
US20090269939A1 (en) * | 2008-04-25 | 2009-10-29 | Asm International, N.V. | Cyclical oxidation process |
US8889565B2 (en) * | 2009-02-13 | 2014-11-18 | Asm International N.V. | Selective removal of oxygen from metal-containing materials |
US9127340B2 (en) * | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
US7829457B2 (en) * | 2009-02-20 | 2010-11-09 | Asm International N.V. | Protection of conductors from oxidation in deposition chambers |
WO2010102089A2 (en) * | 2009-03-05 | 2010-09-10 | Applied Materials, Inc. | Methods for depositing layers having reduced interfacial contamination |
US8507388B2 (en) | 2010-04-26 | 2013-08-13 | Asm International N.V. | Prevention of oxidation of substrate surfaces in process chambers |
US20130207109A1 (en) * | 2012-02-14 | 2013-08-15 | Ji Fu Machinery & Equipment Inc. | Semiconductor device and method for manufacturing a semiconductor device |
JP2015133444A (ja) * | 2014-01-15 | 2015-07-23 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE813913C (de) * | 1949-11-05 | 1951-09-17 | Zeiss Opton | Vakuumgefaess aus Metall |
US4330619A (en) * | 1980-08-14 | 1982-05-18 | New York Blood Center, Inc. | Enzymatic conversion of red cells for transfusion |
DE3142548A1 (de) * | 1981-10-27 | 1983-05-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von oxidschichten auf aus silizium oder anderem oxidierbarem material bestehenden substratscheiben in extrem trockener sauerstoffatmosphaere bzw. in sauerstoffatmosphaere mit chlorwasserstoffgas-zusaetzen |
JPS61294811A (ja) * | 1985-06-21 | 1986-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結晶製造装置 |
DE3539981C1 (de) * | 1985-11-11 | 1987-06-11 | Telog Systems Gmbh | Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien |
US4835114A (en) * | 1986-02-19 | 1989-05-30 | Hitachi, Ltd. | Method for LPCVD of semiconductors using oil free vacuum pumps |
JPS63128710A (ja) * | 1986-11-19 | 1988-06-01 | Mitsubishi Electric Corp | 反応炉 |
US4723363A (en) * | 1986-12-29 | 1988-02-09 | Motorola Inc. | Process for removal of water |
US4802441A (en) * | 1987-01-08 | 1989-02-07 | Btu Engineering Corporation | Double wall fast cool-down furnace |
US4753192A (en) * | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
US4763602A (en) * | 1987-02-25 | 1988-08-16 | Glasstech Solar, Inc. | Thin film deposition apparatus including a vacuum transport mechanism |
GB2202236B (en) * | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
JPH01125821A (ja) * | 1987-11-10 | 1989-05-18 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JP2502661B2 (ja) * | 1988-03-04 | 1996-05-29 | 松下電器産業株式会社 | 気相成長装置 |
JPH01289086A (ja) * | 1988-05-16 | 1989-11-21 | Toshiba Corp | 真空加熱装置 |
JP2814436B2 (ja) * | 1988-05-20 | 1998-10-22 | 住友電気工業株式会社 | 気相成長方法及びその装置 |
JPH0750689B2 (ja) * | 1988-12-01 | 1995-05-31 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2928930B2 (ja) * | 1989-12-06 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 不純物ドーピング装置 |
JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
US5194397A (en) * | 1991-06-05 | 1993-03-16 | International Business Machines Corporation | Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface |
-
1991
- 1991-03-19 JP JP3080688A patent/JP2892170B2/ja not_active Expired - Fee Related
- 1991-07-19 EP EP91112123A patent/EP0467392B1/de not_active Revoked
- 1991-07-19 KR KR1019910012357A patent/KR940010514B1/ko not_active IP Right Cessation
- 1991-07-19 DE DE69119989T patent/DE69119989T2/de not_active Revoked
-
1994
- 1994-09-01 US US08/300,067 patent/US5589421A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2892170B2 (ja) | 1999-05-17 |
EP0467392B1 (de) | 1996-06-05 |
KR940010514B1 (ko) | 1994-10-24 |
US5589421A (en) | 1996-12-31 |
EP0467392A1 (de) | 1992-01-22 |
JPH04218910A (ja) | 1992-08-10 |
KR920003445A (ko) | 1992-02-29 |
DE69119989T2 (de) | 1996-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8331 | Complete revocation |