DE69637690D1 - Verfahren zum Herstellen abgeschiedener Filme und Vorrichtung zum Herstellen abgeschiedener Filme - Google Patents
Verfahren zum Herstellen abgeschiedener Filme und Vorrichtung zum Herstellen abgeschiedener FilmeInfo
- Publication number
- DE69637690D1 DE69637690D1 DE69637690T DE69637690T DE69637690D1 DE 69637690 D1 DE69637690 D1 DE 69637690D1 DE 69637690 T DE69637690 T DE 69637690T DE 69637690 T DE69637690 T DE 69637690T DE 69637690 D1 DE69637690 D1 DE 69637690D1
- Authority
- DE
- Germany
- Prior art keywords
- deposited films
- producing deposited
- producing
- films
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35035995A JP3332700B2 (ja) | 1995-12-22 | 1995-12-22 | 堆積膜形成方法及び堆積膜形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69637690D1 true DE69637690D1 (de) | 2008-11-06 |
Family
ID=18409961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637690T Expired - Lifetime DE69637690D1 (de) | 1995-12-22 | 1996-12-20 | Verfahren zum Herstellen abgeschiedener Filme und Vorrichtung zum Herstellen abgeschiedener Filme |
Country Status (6)
Country | Link |
---|---|
US (1) | US6350489B1 (de) |
EP (1) | EP0782176B1 (de) |
JP (1) | JP3332700B2 (de) |
KR (1) | KR100269936B1 (de) |
CN (1) | CN1124365C (de) |
DE (1) | DE69637690D1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3870014B2 (ja) | 1999-07-26 | 2007-01-17 | キヤノン株式会社 | 真空処理装置および真空処理方法 |
JP2001288572A (ja) * | 2000-01-31 | 2001-10-19 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
JP4841023B2 (ja) * | 2000-02-10 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 成膜装置及び太陽電池の作製方法 |
US6667240B2 (en) | 2000-03-09 | 2003-12-23 | Canon Kabushiki Kaisha | Method and apparatus for forming deposited film |
JP2002020863A (ja) | 2000-05-01 | 2002-01-23 | Canon Inc | 堆積膜の形成方法及び形成装置、及び基板処理方法 |
US6434514B1 (en) * | 2000-10-13 | 2002-08-13 | Sbc Technology Resources, Inc. | Rule based capacity management system for an inter office facility |
JP4651072B2 (ja) | 2001-05-31 | 2011-03-16 | キヤノン株式会社 | 堆積膜形成方法、および堆積膜形成装置 |
JP4560245B2 (ja) * | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | 光起電力素子 |
JP2004043910A (ja) * | 2002-07-12 | 2004-02-12 | Canon Inc | 堆積膜形成方法および形成装置 |
US7169323B2 (en) | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
JP2006045593A (ja) * | 2004-08-02 | 2006-02-16 | Fuji Electric Holdings Co Ltd | 基板処理装置および基板処理方法 |
US7666766B2 (en) * | 2005-09-27 | 2010-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device |
US8323735B2 (en) | 2006-10-13 | 2012-12-04 | Solopower, Inc. | Method and apparatus to form solar cell absorber layers with planar surface |
US9103033B2 (en) * | 2006-10-13 | 2015-08-11 | Solopower Systems, Inc. | Reel-to-reel reaction of precursor film to form solar cell absorber |
WO2008085604A2 (en) * | 2006-11-10 | 2008-07-17 | Solopower, Inc. | Reel-to-reel reaction of precursor film to form solar cell absorber |
US20100300352A1 (en) * | 2007-10-17 | 2010-12-02 | Yann Roussillon | Solution deposition assembly |
US8409418B2 (en) | 2009-02-06 | 2013-04-02 | Solopower, Inc. | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers |
WO2009111054A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Solution containment during buffer layer deposition |
WO2009111055A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
WO2009111052A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Heating for buffer layer deposition |
US8062922B2 (en) * | 2008-03-05 | 2011-11-22 | Global Solar Energy, Inc. | Buffer layer deposition for thin-film solar cells |
US9252318B2 (en) | 2008-03-05 | 2016-02-02 | Hanergy Hi-Tech Power (Hk) Limited | Solution containment during buffer layer deposition |
DE102008017492B4 (de) * | 2008-04-04 | 2013-07-25 | Von Ardenne Anlagentechnik Gmbh | Verfahren zum Transport eines bandförmigen Substrats und Vakuumbeschichtungsanlage |
DE102008029379A1 (de) * | 2008-06-23 | 2009-08-13 | Von Ardenne Anlagentechnik Gmbh | Anordnung zum Beschichten bandförmiger Foliensubstrate |
CN101614620A (zh) * | 2008-06-27 | 2009-12-30 | 深圳富泰宏精密工业有限公司 | 电子装置及其周期性测试方法 |
JP5532506B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール |
JP5532507B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール及びガラスロールの処理方法 |
JP5435267B2 (ja) * | 2008-10-01 | 2014-03-05 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
JP5691148B2 (ja) | 2008-10-01 | 2015-04-01 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
JP5238530B2 (ja) * | 2009-01-28 | 2013-07-17 | 富士電機株式会社 | 薄膜製造装置 |
US20100291308A1 (en) * | 2009-05-14 | 2010-11-18 | Veeco Instruments Inc. | Web Substrate Deposition System |
US20100310766A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Roll-to-Roll Chemical Vapor Deposition System |
US20100310769A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Continuous Feed Chemical Vapor Deposition System |
JP5315228B2 (ja) * | 2009-12-25 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 成膜装置及び太陽電池の作製方法 |
DE102012111484A1 (de) * | 2012-11-27 | 2014-05-28 | Aixtron Se | Vorrichtung und Verfahren zum Bearbeiten streifenförmiger Substrate |
CN103469163A (zh) * | 2013-09-22 | 2013-12-25 | 无锡启晖光电科技有限公司 | 一种真空镀膜机 |
CN106164330B (zh) * | 2014-04-02 | 2021-01-26 | 应用材料公司 | 真空处理系统以及用于装配处理系统的方法 |
JP6717191B2 (ja) * | 2014-04-18 | 2020-07-01 | 株式会社ニコン | 成膜装置、基板処理装置、および、デバイス製造方法 |
KR20180083926A (ko) * | 2015-11-20 | 2018-07-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 프로세싱 챔버 내에서 가요성 기판을 지지하기 위한 장치, 가요성 기판 상의 층 증착을 위해 구성된 프로세싱 장치, 및 코팅 드럼 상에 가요성 기판을 지지하기 위한 방법 |
JP6544249B2 (ja) * | 2016-01-19 | 2019-07-17 | 住友金属鉱山株式会社 | キャンロールと真空成膜装置および長尺体の成膜方法 |
JP6508080B2 (ja) * | 2016-02-05 | 2019-05-08 | 住友金属鉱山株式会社 | キャンロールと長尺体の処理装置および処理方法 |
KR102622868B1 (ko) | 2016-11-28 | 2024-01-08 | 엘지디스플레이 주식회사 | 열충격이 방지된 롤투롤 제조장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1542299A (en) * | 1976-03-23 | 1979-03-14 | Warner Lambert Co | Blade shields |
US4485125A (en) | 1982-03-19 | 1984-11-27 | Energy Conversion Devices, Inc. | Method for continuously producing tandem amorphous photovoltaic cells |
US4440107A (en) | 1982-07-12 | 1984-04-03 | Energy Conversion Devices, Inc. | Magnetic apparatus for reducing substrate warpage |
US4724169A (en) * | 1984-10-09 | 1988-02-09 | Ovonic Synthetic Materials Company, Inc. | Method of producing multilayer coatings on a substrate |
JPS61159573A (ja) * | 1985-01-07 | 1986-07-19 | Hitachi Ltd | 真空蒸着装置 |
US4968918A (en) | 1987-07-06 | 1990-11-06 | Kanebo, Ltd. | Apparatus for plasma treatment |
US4763601A (en) | 1987-09-02 | 1988-08-16 | Nippon Steel Corporation | Continuous composite coating apparatus for coating strip |
JPH0621358B2 (ja) | 1988-07-15 | 1994-03-23 | 川崎製鉄株式会社 | 長尺基板均一加熱装置 |
DE69030140T2 (de) | 1989-06-28 | 1997-09-04 | Canon Kk | Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht |
JPH0444335A (ja) | 1990-06-12 | 1992-02-14 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2714247B2 (ja) * | 1990-10-29 | 1998-02-16 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
JPH06280026A (ja) | 1993-03-24 | 1994-10-04 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
JP3659512B2 (ja) | 1993-12-20 | 2005-06-15 | キヤノン株式会社 | 光起電力素子及びその形成方法及びその形成装置 |
JP3571785B2 (ja) | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
-
1995
- 1995-12-22 JP JP35035995A patent/JP3332700B2/ja not_active Expired - Fee Related
-
1996
- 1996-12-18 US US08/768,609 patent/US6350489B1/en not_active Expired - Lifetime
- 1996-12-20 DE DE69637690T patent/DE69637690D1/de not_active Expired - Lifetime
- 1996-12-20 CN CN96123838A patent/CN1124365C/zh not_active Expired - Fee Related
- 1996-12-20 EP EP96120617A patent/EP0782176B1/de not_active Expired - Lifetime
- 1996-12-21 KR KR1019960069916A patent/KR100269936B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3332700B2 (ja) | 2002-10-07 |
KR100269936B1 (ko) | 2000-10-16 |
JPH09181005A (ja) | 1997-07-11 |
EP0782176A3 (de) | 2000-01-12 |
KR970052053A (ko) | 1997-07-29 |
US6350489B1 (en) | 2002-02-26 |
CN1158912A (zh) | 1997-09-10 |
EP0782176B1 (de) | 2008-09-24 |
CN1124365C (zh) | 2003-10-15 |
EP0782176A2 (de) | 1997-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |