DE69106478T2 - Verfahren zur heteroepitaktischen Züchtung von Schichten. - Google Patents

Verfahren zur heteroepitaktischen Züchtung von Schichten.

Info

Publication number
DE69106478T2
DE69106478T2 DE69106478T DE69106478T DE69106478T2 DE 69106478 T2 DE69106478 T2 DE 69106478T2 DE 69106478 T DE69106478 T DE 69106478T DE 69106478 T DE69106478 T DE 69106478T DE 69106478 T2 DE69106478 T2 DE 69106478T2
Authority
DE
Germany
Prior art keywords
layers
heteroepitaxial growth
heteroepitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69106478T
Other languages
English (en)
Other versions
DE69106478D1 (de
Inventor
Didier Pribat
Pierre Legagneux
Christian Collet
Valerie Provendier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REMOTE ACCESS,LLC, LOS ALTOS, CALIF., US
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE69106478D1 publication Critical patent/DE69106478D1/de
Application granted granted Critical
Publication of DE69106478T2 publication Critical patent/DE69106478T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
DE69106478T 1990-10-09 1991-10-04 Verfahren zur heteroepitaktischen Züchtung von Schichten. Expired - Lifetime DE69106478T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9012443A FR2667617B1 (fr) 1990-10-09 1990-10-09 Procede de croissance de couches heteroepitaxiales.

Publications (2)

Publication Number Publication Date
DE69106478D1 DE69106478D1 (de) 1995-02-16
DE69106478T2 true DE69106478T2 (de) 1995-05-11

Family

ID=9401062

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69106478T Expired - Lifetime DE69106478T2 (de) 1990-10-09 1991-10-04 Verfahren zur heteroepitaktischen Züchtung von Schichten.

Country Status (5)

Country Link
US (1) US5262348A (de)
EP (1) EP0480804B1 (de)
JP (1) JP3117755B2 (de)
DE (1) DE69106478T2 (de)
FR (1) FR2667617B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2682128B1 (fr) * 1991-10-08 1993-12-03 Thomson Csf Procede de croissance de couches heteroepitaxiales.
FR2689680B1 (fr) * 1992-04-02 2001-08-10 Thomson Csf Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques.
US5427630A (en) * 1994-05-09 1995-06-27 International Business Machines Corporation Mask material for low temperature selective growth of silicon or silicon alloys
FR2780808B1 (fr) 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
FR2802705B1 (fr) * 1999-12-16 2002-08-09 St Microelectronics Sa Procede de fabrication d'un reseau de lignes nanometriques en silicium monocristallin et dispositif obtenu
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
FR2829873B1 (fr) * 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
FR2832995B1 (fr) * 2001-12-04 2004-02-27 Thales Sa Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi
FR2879342B1 (fr) * 2004-12-15 2008-09-26 Thales Sa Cathode a emission de champ, a commande optique
KR101614300B1 (ko) 2015-06-09 2016-04-21 한국세라믹기술원 측면 성장을 이용한 고품질 질화물 기판의 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPH0666257B2 (ja) * 1986-08-20 1994-08-24 日本電気株式会社 半導体膜の製造方法
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
US4948456A (en) * 1989-06-09 1990-08-14 Delco Electronics Corporation Confined lateral selective epitaxial growth

Also Published As

Publication number Publication date
JPH04260321A (ja) 1992-09-16
FR2667617B1 (fr) 1992-11-27
FR2667617A1 (fr) 1992-04-10
DE69106478D1 (de) 1995-02-16
EP0480804A3 (en) 1992-07-29
EP0480804A2 (de) 1992-04-15
US5262348A (en) 1993-11-16
JP3117755B2 (ja) 2000-12-18
EP0480804B1 (de) 1995-01-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: THALES S.A., NEUILLY SUR SEINE, FR

8328 Change in the person/name/address of the agent

Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN

8327 Change in the person/name/address of the patent owner

Owner name: REMOTE ACCESS,LLC, LOS ALTOS, CALIF., US