DE69026669D1 - Verfahren zur Herstellung einer abgeschiedenen Schicht unter Verwendung von Alkylaluminiumhydrid und Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents
Verfahren zur Herstellung einer abgeschiedenen Schicht unter Verwendung von Alkylaluminiumhydrid und Verfahren zur Herstellung eines HalbleiterbauelementsInfo
- Publication number
- DE69026669D1 DE69026669D1 DE69026669T DE69026669T DE69026669D1 DE 69026669 D1 DE69026669 D1 DE 69026669D1 DE 69026669 T DE69026669 T DE 69026669T DE 69026669 T DE69026669 T DE 69026669T DE 69026669 D1 DE69026669 D1 DE 69026669D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- aluminum hydride
- alkyl aluminum
- deposition rate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25002389 | 1989-09-26 | ||
JP25002289 | 1989-09-26 | ||
JP2006559A JP2721020B2 (ja) | 1989-09-26 | 1990-01-16 | 堆積膜形成法 |
JP2006560A JP2721021B2 (ja) | 1989-09-26 | 1990-01-16 | 堆積膜形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026669D1 true DE69026669D1 (de) | 1996-05-30 |
DE69026669T2 DE69026669T2 (de) | 1996-10-17 |
Family
ID=27454510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026669T Expired - Fee Related DE69026669T2 (de) | 1989-09-26 | 1990-09-25 | Verfahren zur Herstellung einer abgeschiedenen Schicht unter Verwendung von Alkylaluminiumhydrid und Verfahren zur Herstellung eines Halbleiterbauelements |
Country Status (8)
Country | Link |
---|---|
US (1) | US5316972A (de) |
EP (1) | EP0420597B1 (de) |
KR (1) | KR940007444B1 (de) |
AT (1) | ATE137357T1 (de) |
DE (1) | DE69026669T2 (de) |
MY (1) | MY136962A (de) |
PT (1) | PT95431B (de) |
SG (1) | SG45420A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0460857B1 (de) * | 1990-05-31 | 1997-03-19 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte |
JPH04346231A (ja) * | 1991-05-23 | 1992-12-02 | Canon Inc | 半導体装置の製造方法 |
EP0572212A3 (en) * | 1992-05-29 | 1994-05-11 | Sgs Thomson Microelectronics | Method to form silicon doped cvd aluminium |
EP0608628A3 (de) * | 1992-12-25 | 1995-01-18 | Kawasaki Steel Co | Verfahren zur Herstellung einer Halbleitervorrichtung mit Mehrlagen-Verbindungsstruktur. |
US6159854A (en) * | 1994-08-22 | 2000-12-12 | Fujitsu Limited | Process of growing conductive layer from gas phase |
US6726776B1 (en) | 1995-11-21 | 2004-04-27 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
US5877087A (en) | 1995-11-21 | 1999-03-02 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
US6077781A (en) * | 1995-11-21 | 2000-06-20 | Applied Materials, Inc. | Single step process for blanket-selective CVD aluminum deposition |
US6309971B1 (en) | 1996-08-01 | 2001-10-30 | Cypress Semiconductor Corporation | Hot metallization process |
US6025269A (en) * | 1996-10-15 | 2000-02-15 | Micron Technology, Inc. | Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer |
US6156645A (en) * | 1996-10-25 | 2000-12-05 | Cypress Semiconductor Corporation | Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature |
US6187673B1 (en) | 1998-09-03 | 2001-02-13 | Micron Technology, Inc. | Small grain size, conformal aluminum interconnects and method for their formation |
US6245655B1 (en) * | 1999-04-01 | 2001-06-12 | Cvc Products, Inc. | Method for planarized deposition of a material |
US6207558B1 (en) | 1999-10-21 | 2001-03-27 | Applied Materials, Inc. | Barrier applications for aluminum planarization |
US11261533B2 (en) * | 2017-02-10 | 2022-03-01 | Applied Materials, Inc. | Aluminum plating at low temperature with high efficiency |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4497683A (en) * | 1982-05-03 | 1985-02-05 | At&T Bell Laboratories | Process for producing dielectrically isolated silicon devices |
JPS6211227A (ja) * | 1985-07-09 | 1987-01-20 | Fujitsu Ltd | 半導体装置の製造方法 |
US4824802A (en) * | 1986-02-28 | 1989-04-25 | General Electric Company | Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures |
JPS62216224A (ja) * | 1986-03-17 | 1987-09-22 | Fujitsu Ltd | タングステンの選択成長方法 |
JP2559030B2 (ja) * | 1986-07-25 | 1996-11-27 | 日本電信電話株式会社 | 金属薄膜の製造方法 |
JP2534848B2 (ja) * | 1986-09-08 | 1996-09-18 | 富士通株式会社 | 高融点金属の選択成長法 |
US4960732A (en) * | 1987-02-19 | 1990-10-02 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
US4902645A (en) * | 1987-08-24 | 1990-02-20 | Fujitsu Limited | Method of selectively forming a silicon-containing metal layer |
US4786615A (en) * | 1987-08-31 | 1988-11-22 | Motorola Inc. | Method for improved surface planarity in selective epitaxial silicon |
US4963511A (en) * | 1987-11-30 | 1990-10-16 | Texas Instruments Incorporated | Method of reducing tungsten selectivity to a contact sidewall |
JPH01252776A (ja) * | 1988-03-31 | 1989-10-09 | Sony Corp | 気相成長アルミニウム膜形成方法 |
JPH01276624A (ja) * | 1988-04-28 | 1989-11-07 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
US4898841A (en) * | 1988-06-16 | 1990-02-06 | Northern Telecom Limited | Method of filling contact holes for semiconductor devices and contact structures made by that method |
JPH0212913A (ja) * | 1988-06-30 | 1990-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 金属または半導体の電極・配線形成方法 |
JP2617529B2 (ja) * | 1988-08-24 | 1997-06-04 | 日本電信電話株式会社 | 金属膜の形成方法 |
JP2570839B2 (ja) * | 1988-12-22 | 1997-01-16 | 日本電気株式会社 | A▲l▼ーCu合金薄膜形成方法 |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
JP2578193B2 (ja) * | 1989-02-01 | 1997-02-05 | 沖電気工業株式会社 | 半導体素子の製造方法 |
US4920403A (en) * | 1989-04-17 | 1990-04-24 | Hughes Aircraft Company | Selective tungsten interconnection for yield enhancement |
DE69130595T2 (de) * | 1990-07-06 | 1999-05-27 | Tsubochi Kazuo | Verfahren zur Herstellung einer Metallschicht |
-
1990
- 1990-09-25 SG SG1996006901A patent/SG45420A1/en unknown
- 1990-09-25 EP EP90310508A patent/EP0420597B1/de not_active Expired - Lifetime
- 1990-09-25 AT AT90310508T patent/ATE137357T1/de not_active IP Right Cessation
- 1990-09-25 DE DE69026669T patent/DE69026669T2/de not_active Expired - Fee Related
- 1990-09-26 MY MYPI90001657A patent/MY136962A/en unknown
- 1990-09-26 KR KR1019900015302A patent/KR940007444B1/ko not_active IP Right Cessation
- 1990-09-26 PT PT95431A patent/PT95431B/pt not_active IP Right Cessation
-
1992
- 1992-06-17 US US07/899,940 patent/US5316972A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0420597A3 (en) | 1991-08-21 |
DE69026669T2 (de) | 1996-10-17 |
MY136962A (en) | 2008-12-31 |
EP0420597B1 (de) | 1996-04-24 |
EP0420597A2 (de) | 1991-04-03 |
PT95431B (pt) | 1997-07-31 |
SG45420A1 (en) | 1998-01-16 |
ATE137357T1 (de) | 1996-05-15 |
KR910007078A (ko) | 1991-04-30 |
PT95431A (pt) | 1991-05-22 |
US5316972A (en) | 1994-05-31 |
KR940007444B1 (ko) | 1994-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |