DE68925442D1 - Verfahren zur Herstellung von Halbleiterbauelementen sowie Leiterrahmen und ein differentiales Ueberlappungsgerät hierfür - Google Patents

Verfahren zur Herstellung von Halbleiterbauelementen sowie Leiterrahmen und ein differentiales Ueberlappungsgerät hierfür

Info

Publication number
DE68925442D1
DE68925442D1 DE68925442T DE68925442T DE68925442D1 DE 68925442 D1 DE68925442 D1 DE 68925442D1 DE 68925442 T DE68925442 T DE 68925442T DE 68925442 T DE68925442 T DE 68925442T DE 68925442 D1 DE68925442 D1 DE 68925442D1
Authority
DE
Germany
Prior art keywords
production
well
lead frames
semiconductor components
device therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68925442T
Other languages
English (en)
Other versions
DE68925442T2 (de
Inventor
Yoshio Kurita
Akira Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63184283A external-priority patent/JPH0636422B2/ja
Priority claimed from JP1106471A external-priority patent/JPH0671015B2/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of DE68925442D1 publication Critical patent/DE68925442D1/de
Publication of DE68925442T2 publication Critical patent/DE68925442T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
    • Y10T29/53178—Chip component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE68925442T 1988-07-22 1989-07-17 Verfahren zur Herstellung von Halbleiterbauelementen sowie Leiterrahmen und ein differentiales Ueberlappungsgerät hierfür Expired - Lifetime DE68925442T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63184283A JPH0636422B2 (ja) 1988-07-22 1988-07-22 半導体装置の製造方法及びその製造方法に使用するリードフレーム並びに前記製造方法に使用するずらせ変位装置
JP1106471A JPH0671015B2 (ja) 1989-04-25 1989-04-25 半導体部品製造用リードフレームのずらせ重ね装置

Publications (2)

Publication Number Publication Date
DE68925442D1 true DE68925442D1 (de) 1996-02-29
DE68925442T2 DE68925442T2 (de) 1996-05-30

Family

ID=26446590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925442T Expired - Lifetime DE68925442T2 (de) 1988-07-22 1989-07-17 Verfahren zur Herstellung von Halbleiterbauelementen sowie Leiterrahmen und ein differentiales Ueberlappungsgerät hierfür

Country Status (5)

Country Link
US (2) US5038453A (de)
EP (1) EP0351749B1 (de)
KR (1) KR970006724B1 (de)
DE (1) DE68925442T2 (de)
MY (2) MY105015A (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US5332405A (en) * 1992-09-01 1994-07-26 Golomb Mark S Apparatus for manufacturing semiconductor lead frames in a circular path
US5506174A (en) * 1994-07-12 1996-04-09 General Instrument Corp. Automated assembly of semiconductor devices using a pair of lead frames
US5821611A (en) * 1994-11-07 1998-10-13 Rohm Co. Ltd. Semiconductor device and process and leadframe for making the same
MY122101A (en) 1997-03-28 2006-03-31 Rohm Co Ltd Lead frame and semiconductor device made by using it
US6087195A (en) * 1998-10-15 2000-07-11 Handy & Harman Method and system for manufacturing lamp tiles
US6592640B1 (en) 2000-02-02 2003-07-15 3M Innovative Properties Company Fused Al2O3-Y2O3 eutectic abrasive particles, abrasive articles, and methods of making and using the same
US6607570B1 (en) 2000-02-02 2003-08-19 3M Innovative Properties Company Fused Al2O3-rare earth oxide eutectic abrasive particles, abrasive articles, and methods of making and using the same
US6451077B1 (en) 2000-02-02 2002-09-17 3M Innovative Properties Company Fused abrasive particles, abrasive articles, and methods of making and using the same
US6669749B1 (en) 2000-02-02 2003-12-30 3M Innovative Properties Company Fused abrasive particles, abrasive articles, and methods of making and using the same
US6596041B2 (en) 2000-02-02 2003-07-22 3M Innovative Properties Company Fused AL2O3-MgO-rare earth oxide eutectic abrasive particles, abrasive articles, and methods of making and using the same
EP1257512B1 (de) 2000-02-02 2012-02-22 3M Innovative Properties Company Geschmolzene schleifpartikel, und verfahren zur herstellung und verwendung derselben.
US7384438B1 (en) 2000-07-19 2008-06-10 3M Innovative Properties Company Fused Al2O3-Y2O3-ZrO2 eutectic abrasive particles, abrasive articles, and methods of making and using the same
US6458731B1 (en) 2000-07-19 2002-10-01 3M Innovative Properties Company Fused aluminum oxycarbide/nitride-AL2O3.Y2O3 eutectic materials
US6582488B1 (en) 2000-07-19 2003-06-24 3M Innovative Properties Company Fused Al2O3-rare earth oxide-ZrO2 eutectic materials
US6583080B1 (en) 2000-07-19 2003-06-24 3M Innovative Properties Company Fused aluminum oxycarbide/nitride-Al2O3·rare earth oxide eutectic materials
US6589305B1 (en) 2000-07-19 2003-07-08 3M Innovative Properties Company Fused aluminum oxycarbide/nitride-Al2O3 • rare earth oxide eutectic abrasive particles, abrasive articles, and methods of making and using the same
JP2004504448A (ja) 2000-07-19 2004-02-12 スリーエム　イノベイティブ　プロパティズ　カンパニー 溶融Ａｌ２Ｏ３−希土類酸化物−ＺｒＯ２共晶材料、研磨剤粒子、研磨剤物品ならびにこれらの製造方法および使用方法
US6666750B1 (en) 2000-07-19 2003-12-23 3M Innovative Properties Company Fused AL2O3-rare earth oxide-ZrO2 eutectic abrasive particles, abrasive articles, and methods of making and using the same
US6454822B1 (en) 2000-07-19 2002-09-24 3M Innovative Properties Company Fused aluminum oxycarbide/nitride-Al2O3·Y2O3 eutectic abrasive particles, abrasive articles, and methods of making and using the same
DE60121171T2 (de) 2000-07-19 2007-06-06 3M Innovative Properties Co., Saint Paul Geschmolzene eutektische materialien aus aluminiumoxicarbid/-nitrid-aluminiumseltenerdoxid, schleifpartikel, schleifgegenstände und verfahren zur herstellung und verwendung derselben
US6790126B2 (en) * 2000-10-06 2004-09-14 3M Innovative Properties Company Agglomerate abrasive grain and a method of making the same
EP1326940B1 (de) 2000-10-16 2010-03-31 3M Innovative Properties Company Verfahren zur herstellung von keramischen agglomeratteilchen
US6521004B1 (en) 2000-10-16 2003-02-18 3M Innovative Properties Company Method of making an abrasive agglomerate particle
US6551366B1 (en) 2000-11-10 2003-04-22 3M Innovative Properties Company Spray drying methods of making agglomerate abrasive grains and abrasive articles
KR100885328B1 (ko) * 2001-08-02 2009-02-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 알루미나-산화 이트륨-산화 지르코늄/산화 하프늄 물질,및 그의 제조 및 사용 방법
CA2454068A1 (en) 2001-08-02 2003-02-13 3M Innovative Properties Company Al2o3-rare earth oxide-zro2/hfo2 materials, and methods of making and using the same
ES2295396T3 (es) 2001-08-02 2008-04-16 3M Innovative Properties Company Metodo para fabricar articulos a partir de vidrio y articulos vitroceramicos asi producidos.
US6572666B1 (en) 2001-09-28 2003-06-03 3M Innovative Properties Company Abrasive articles and methods of making the same
US6803255B2 (en) * 2002-07-31 2004-10-12 Delphi Technologies, Inc. Dual gauge lead frame
US8056370B2 (en) 2002-08-02 2011-11-15 3M Innovative Properties Company Method of making amorphous and ceramics via melt spinning
US7811496B2 (en) 2003-02-05 2010-10-12 3M Innovative Properties Company Methods of making ceramic particles
US7399330B2 (en) * 2005-10-18 2008-07-15 3M Innovative Properties Company Agglomerate abrasive grains and methods of making the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL283249A (de) * 1961-09-19 1900-01-01
DE1514822A1 (de) * 1964-08-14 1969-06-26 Telefunken Patent Verfahren zur Herstellung einer Halbleiteranordnung
US3430115A (en) * 1966-08-31 1969-02-25 Webb James E Apparatus for ballasting high frequency transistors
US3577633A (en) * 1966-12-02 1971-05-04 Hitachi Ltd Method of making a semiconductor device
DE2054677B2 (de) * 1970-11-06 1977-12-22 Semikron Gesellschaft für Gleichrichterbau und Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleitergleichrichteranordnungen
US3698076A (en) * 1970-08-03 1972-10-17 Motorola Inc Method of applying leads to an integrated circuit
CA915318A (en) * 1971-04-27 1972-11-21 M. Dupuis Jean Method and apparatus for manufacture of integrated circuit devices
US4079509A (en) * 1972-01-29 1978-03-21 Ferranti Limited Method of manufacturing semi-conductor devices
US3839782A (en) * 1972-03-15 1974-10-08 M Lincoln Method for using a lead frame for the manufacture of electric devices having semiconductor chips placed in a face-to-face relation
US3859718A (en) * 1973-01-02 1975-01-14 Texas Instruments Inc Method and apparatus for the assembly of semiconductor devices
JPS5144385B2 (de) * 1973-02-16 1976-11-27
US4069924A (en) * 1976-11-18 1978-01-24 Western Electric Co., Inc. Methods and apparatus for positioning an article laterally on a support
JPS5380187A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Manufacture of semiconductor device
US4252864A (en) * 1979-11-05 1981-02-24 Amp Incorporated Lead frame having integral terminal tabs
NL8001114A (nl) * 1980-02-25 1981-09-16 Philips Nv Inrichting voor de montage van aansluitdraadloze plaat- of blokvormige elektronische onderdelen op een substraat.
US4616250A (en) * 1984-07-03 1986-10-07 Motorola, Inc. Contact assembly for small semiconductor device
JPS6235549A (ja) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp 整流装置
JPH0636393B2 (ja) * 1987-04-15 1994-05-11 松下電器産業株式会社 電子部品の製造方法
US4859632A (en) * 1987-12-28 1989-08-22 Siemens Corporate Research And Support, Inc. Method for manufacturing the same

Also Published As

Publication number Publication date
MY105015A (en) 1994-07-30
US5068206A (en) 1991-11-26
DE68925442T2 (de) 1996-05-30
US5038453A (en) 1991-08-13
EP0351749A3 (de) 1991-04-17
EP0351749A2 (de) 1990-01-24
EP0351749B1 (de) 1996-01-17
MY112386A (en) 2001-06-30
KR970006724B1 (ko) 1997-04-29
KR900002437A (ko) 1990-02-28

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Legal Events

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8364 No opposition during term of opposition