DE68915763T2 - Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden. - Google Patents

Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

Info

Publication number
DE68915763T2
DE68915763T2 DE68915763T DE68915763T DE68915763T2 DE 68915763 T2 DE68915763 T2 DE 68915763T2 DE 68915763 T DE68915763 T DE 68915763T DE 68915763 T DE68915763 T DE 68915763T DE 68915763 T2 DE68915763 T2 DE 68915763T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser diodes
passivation
mirror
mirror passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915763T
Other languages
English (en)
Other versions
DE68915763D1 (de
Inventor
Marcel Gasser
Ernst Eberhard Dr Latta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68915763D1 publication Critical patent/DE68915763D1/de
Application granted granted Critical
Publication of DE68915763T2 publication Critical patent/DE68915763T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
DE68915763T 1989-09-07 1989-09-07 Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden. Expired - Lifetime DE68915763T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89810668A EP0416190B1 (de) 1989-09-07 1989-09-07 Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden

Publications (2)

Publication Number Publication Date
DE68915763D1 DE68915763D1 (de) 1994-07-07
DE68915763T2 true DE68915763T2 (de) 1994-12-08

Family

ID=8203176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915763T Expired - Lifetime DE68915763T2 (de) 1989-09-07 1989-09-07 Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

Country Status (5)

Country Link
US (1) US5063173A (de)
EP (1) EP0416190B1 (de)
JP (1) JPH03101183A (de)
CA (1) CA2018501C (de)
DE (1) DE68915763T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006046797A1 (de) * 2006-09-29 2008-04-03 Josef Schiele Ohg Verfahren und Vorrichtung zur Bandbeschichtung von variablen Werkstücken in einer Vakuumbeschichtungsvorrichtung

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JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
DE69006353T2 (de) * 1990-05-25 1994-06-23 Ibm Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten.
IT1271636B (it) * 1994-05-04 1997-06-04 Alcatel Italia Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo
JPH10501923A (ja) * 1995-04-19 1998-02-17 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザのような光電半導体装置を製造する方法
US5719077A (en) * 1995-10-30 1998-02-17 Lucent Technologies Inc. Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars
JPH09129976A (ja) * 1995-11-01 1997-05-16 Oki Electric Ind Co Ltd 半導体レーザの端面パッシベーション方法
US5665637A (en) * 1995-11-17 1997-09-09 Lucent Technologies Inc. Passivated faceted article comprising a semiconductor laser
FR2742926B1 (fr) * 1995-12-22 1998-02-06 Alsthom Cge Alcatel Procede et dispositif de preparation de faces de laser
JP2914430B2 (ja) * 1996-01-05 1999-06-28 日本電気株式会社 半導体レーザ素子の製造方法
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
US5911830A (en) * 1996-05-09 1999-06-15 Lucent Technologies Inc. Method and fixture for laser bar facet coating
EP0814544B1 (de) * 1996-06-22 2002-08-21 International Business Machines Corporation Halbleiterlaser mit Spiegelbeschichtung und dessen Herstellungsverfahren
US5940424A (en) * 1996-06-24 1999-08-17 International Business Machines Corporation Semiconductor lasers and method for making the same
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10112566A (ja) * 1996-10-07 1998-04-28 Furukawa Electric Co Ltd:The 半導体レーザ
JPH10209562A (ja) * 1997-01-24 1998-08-07 Nec Corp 半導体レーザ素子の製造方法
EP0856894A1 (de) * 1997-01-31 1998-08-05 Hewlett-Packard Company Beschichtung für eine optische Halbleitervorrichtung
US6289030B1 (en) 1997-01-31 2001-09-11 Hewlett-Packard Company Fabrication of semiconductor devices
EP0898345A3 (de) * 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP3710627B2 (ja) * 1997-08-13 2005-10-26 三菱化学株式会社 化合物半導体発光素子
JP3196831B2 (ja) * 1998-04-20 2001-08-06 日本電気株式会社 半導体レーザ素子の製造方法
US6013540A (en) * 1998-05-01 2000-01-11 Lucent Technologies, Inc. Laser diode with substrate-side protection
JP3699851B2 (ja) * 1998-05-11 2005-09-28 三菱化学株式会社 半導体発光素子の製造方法
US5989932A (en) * 1998-07-28 1999-11-23 Lucent Technologies, Inc. Method and apparatus for retaining and releasing laser bars during a facet coating operation
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
JP2000164969A (ja) * 1998-11-27 2000-06-16 Matsushita Electronics Industry Corp 半導体レーザの製造方法
JP3814432B2 (ja) 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
US6102267A (en) * 1998-12-10 2000-08-15 Lucent Technologies, Inc. Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material
JP2001068780A (ja) 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ素子およびその製造方法
JP2001230483A (ja) * 2000-02-14 2001-08-24 Fuji Photo Film Co Ltd 半導体レーザ装置
US6744796B1 (en) 2000-03-30 2004-06-01 Triquint Technology Holding Co. Passivated optical device and method of forming the same
US6466365B1 (en) * 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
JP2002064239A (ja) * 2000-06-08 2002-02-28 Furukawa Electric Co Ltd:The 半導体レーザ素子の製造方法
US6451120B1 (en) 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
DE10048475C2 (de) * 2000-09-29 2003-04-17 Lumics Gmbh Passivierung der Resonatorendflächen von Halbleiterlasern auf der Basis von III-V-Halbleitermaterial
JP2002164609A (ja) * 2000-11-28 2002-06-07 Sharp Corp 半導体レーザ素子およびその製造方法
JP4236840B2 (ja) 2001-12-25 2009-03-11 富士フイルム株式会社 半導体レーザ素子
JP2003198044A (ja) 2001-12-27 2003-07-11 Sharp Corp 半導体レーザ素子およびその製造方法、並びに、レーザバー固定装置
JP2005175111A (ja) 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法
EP1866955A4 (de) * 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
DE102007058950A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Wellenleiter
EP2043209B1 (de) 2007-09-28 2011-10-26 OSRAM Opto Semiconductors GmbH Kantenemittierender Halbleiterlaser mit einem Wellenleiter
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
FR2930680B1 (fr) * 2008-04-23 2010-08-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.
DE102009054912A1 (de) 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9972968B2 (en) * 2016-04-20 2018-05-15 Trumpf Photonics, Inc. Passivation of laser facets and systems for performing the same
US10505332B1 (en) 2018-06-04 2019-12-10 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
US10714900B2 (en) 2018-06-04 2020-07-14 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
CN111106528A (zh) * 2019-11-28 2020-05-05 苏州长光华芯光电技术有限公司 一种半导体激光器的镀膜方法及半导体激光器

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JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
JPS57198682A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Manufacture of semiconductor laser
US4656638A (en) * 1983-02-14 1987-04-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS60130187A (ja) * 1983-12-17 1985-07-11 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4612211A (en) * 1983-12-20 1986-09-16 Rca Corporation Selective semiconductor coating and protective mask therefor
JPS62235794A (ja) * 1986-04-07 1987-10-15 Sharp Corp 半導体レ−ザアレイ装置
DE69033959T2 (de) * 1989-02-03 2002-10-31 Sharp Kk Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006046797A1 (de) * 2006-09-29 2008-04-03 Josef Schiele Ohg Verfahren und Vorrichtung zur Bandbeschichtung von variablen Werkstücken in einer Vakuumbeschichtungsvorrichtung

Also Published As

Publication number Publication date
EP0416190B1 (de) 1994-06-01
CA2018501A1 (en) 1991-03-07
US5063173A (en) 1991-11-05
JPH03101183A (ja) 1991-04-25
DE68915763D1 (de) 1994-07-07
EP0416190A1 (de) 1991-03-13
CA2018501C (en) 1995-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition