FR2930680B1 - Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces. - Google Patents

Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Info

Publication number
FR2930680B1
FR2930680B1 FR0802270A FR0802270A FR2930680B1 FR 2930680 B1 FR2930680 B1 FR 2930680B1 FR 0802270 A FR0802270 A FR 0802270A FR 0802270 A FR0802270 A FR 0802270A FR 2930680 B1 FR2930680 B1 FR 2930680B1
Authority
FR
France
Prior art keywords
thin film
photovoltaic cell
film silicon
manufacturing thin
silicon photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0802270A
Other languages
English (en)
Other versions
FR2930680A1 (fr
Inventor
Cedric Ducros
Frederic Sanchette
Christophe Secouard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0802270A priority Critical patent/FR2930680B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to KR1020107026108A priority patent/KR20100136554A/ko
Priority to EP09738349A priority patent/EP2281313A2/fr
Priority to PCT/FR2009/000461 priority patent/WO2009133315A2/fr
Priority to JP2011505554A priority patent/JP2011519158A/ja
Priority to BRPI0911637-0A priority patent/BRPI0911637A2/pt
Priority to US12/989,311 priority patent/US8288196B2/en
Publication of FR2930680A1 publication Critical patent/FR2930680A1/fr
Application granted granted Critical
Publication of FR2930680B1 publication Critical patent/FR2930680B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
FR0802270A 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces. Expired - Fee Related FR2930680B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0802270A FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.
EP09738349A EP2281313A2 (fr) 2008-04-23 2009-04-20 Procede de fabrication d'une cellule photovoltaïque a base de silicium en couches minces
PCT/FR2009/000461 WO2009133315A2 (fr) 2008-04-23 2009-04-20 Procede de fabrication d'une cellule photovoltaïque a base de silicium en couches minces
JP2011505554A JP2011519158A (ja) 2008-04-23 2009-04-20 シリコン系薄膜太陽電池の製造方法
KR1020107026108A KR20100136554A (ko) 2008-04-23 2009-04-20 실리콘-계 박막 광기전성 셀의 제조방법
BRPI0911637-0A BRPI0911637A2 (pt) 2008-04-23 2009-04-20 processo de fabricação de uma célula fotovoltaica à base de silício em camadas
US12/989,311 US8288196B2 (en) 2008-04-23 2009-04-20 Process for fabricating a silicon-based thin-film photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0802270A FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Publications (2)

Publication Number Publication Date
FR2930680A1 FR2930680A1 (fr) 2009-10-30
FR2930680B1 true FR2930680B1 (fr) 2010-08-27

Family

ID=40342466

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0802270A Expired - Fee Related FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Country Status (7)

Country Link
US (1) US8288196B2 (fr)
EP (1) EP2281313A2 (fr)
JP (1) JP2011519158A (fr)
KR (1) KR20100136554A (fr)
BR (1) BRPI0911637A2 (fr)
FR (1) FR2930680B1 (fr)
WO (1) WO2009133315A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802485B2 (en) * 2009-09-07 2014-08-12 Tel Solar Ag Method for manufacturing a photovoltaic cell structure
US9018517B2 (en) 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
KR101879363B1 (ko) 2017-01-17 2018-08-16 엘지전자 주식회사 태양 전지 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416190B1 (fr) * 1989-09-07 1994-06-01 International Business Machines Corporation Méthode de passivation des miroirs des diodes laser à semi-conducteur
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
JPH06204137A (ja) * 1992-10-19 1994-07-22 Samsung Electron Co Ltd 多結晶シリコン薄膜の製造方法
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
AU2002951838A0 (en) * 2002-10-08 2002-10-24 Unisearch Limited Method of preparation for polycrystalline semiconductor films
US7629236B2 (en) * 2004-08-26 2009-12-08 Alliance For Sustainable Energy, Llc Method for passivating crystal silicon surfaces
FR2883663B1 (fr) * 2005-03-22 2007-05-11 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince.
US8795854B2 (en) * 2005-08-01 2014-08-05 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

Also Published As

Publication number Publication date
US20110223711A1 (en) 2011-09-15
US8288196B2 (en) 2012-10-16
BRPI0911637A2 (pt) 2018-03-27
EP2281313A2 (fr) 2011-02-09
WO2009133315A2 (fr) 2009-11-05
JP2011519158A (ja) 2011-06-30
WO2009133315A3 (fr) 2010-11-11
FR2930680A1 (fr) 2009-10-30
KR20100136554A (ko) 2010-12-28

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Legal Events

Date Code Title Description
TQ Partial transmission of property
TP Transmission of property

Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERG, FR

Effective date: 20111013

ST Notification of lapse

Effective date: 20131231