DE68922409D1 - Verfahren zur gasartigen reinigung von halbleiterbauelementen. - Google Patents

Verfahren zur gasartigen reinigung von halbleiterbauelementen.

Info

Publication number
DE68922409D1
DE68922409D1 DE68922409T DE68922409T DE68922409D1 DE 68922409 D1 DE68922409 D1 DE 68922409D1 DE 68922409 T DE68922409 T DE 68922409T DE 68922409 T DE68922409 T DE 68922409T DE 68922409 D1 DE68922409 D1 DE 68922409D1
Authority
DE
Germany
Prior art keywords
gas
semiconductor components
washed cleaning
washed
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922409T
Other languages
English (en)
Other versions
DE68922409T2 (de
Inventor
Ronald Gluck
David Hamblen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE68922409D1 publication Critical patent/DE68922409D1/de
Publication of DE68922409T2 publication Critical patent/DE68922409T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/017Clean surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
DE68922409T 1988-12-23 1989-12-18 Verfahren zur gasartigen reinigung von halbleiterbauelementen. Expired - Fee Related DE68922409T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/289,062 US4849375A (en) 1988-12-23 1988-12-23 Gaseous cleaning method for silicon devices
PCT/US1989/005645 WO1990007791A1 (en) 1988-12-23 1989-12-18 Gaseous cleaning method for silicon devices

Publications (2)

Publication Number Publication Date
DE68922409D1 true DE68922409D1 (de) 1995-06-01
DE68922409T2 DE68922409T2 (de) 1996-01-25

Family

ID=23109872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922409T Expired - Fee Related DE68922409T2 (de) 1988-12-23 1989-12-18 Verfahren zur gasartigen reinigung von halbleiterbauelementen.

Country Status (5)

Country Link
US (1) US4849375A (de)
EP (1) EP0539356B1 (de)
JP (1) JP2821264B2 (de)
DE (1) DE68922409T2 (de)
WO (1) WO1990007791A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849375A (en) * 1988-12-23 1989-07-18 Eastman Kodak Company Gaseous cleaning method for silicon devices
US4923828A (en) * 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
US5470768A (en) * 1992-08-07 1995-11-28 Fujitsu Limited Method for fabricating a thin-film transistor
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process
US5704986A (en) * 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
KR100277024B1 (ko) * 1997-10-31 2001-01-15 구본준 선택적 식각기술을 이용한 액정표시장치 제조방법
JP2009121996A (ja) * 2007-11-15 2009-06-04 Sumitomo Electric Ind Ltd バイオセンサシステム及びその測定器
JP4992693B2 (ja) * 2007-12-12 2012-08-08 住友電気工業株式会社 生体情報測定装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
US4264374A (en) * 1978-09-25 1981-04-28 International Business Machines Corporation Cleaning process for p-type silicon surface
JPS62272541A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd 半導体基板の表面処理方法
US4849375A (en) * 1988-12-23 1989-07-18 Eastman Kodak Company Gaseous cleaning method for silicon devices

Also Published As

Publication number Publication date
JP2821264B2 (ja) 1998-11-05
EP0539356A1 (de) 1993-05-05
DE68922409T2 (de) 1996-01-25
US4849375A (en) 1989-07-18
WO1990007791A1 (en) 1990-07-12
JPH03502861A (ja) 1991-06-27
EP0539356B1 (de) 1995-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee