DE68911322D1 - Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren. - Google Patents
Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren.Info
- Publication number
- DE68911322D1 DE68911322D1 DE89300591T DE68911322T DE68911322D1 DE 68911322 D1 DE68911322 D1 DE 68911322D1 DE 89300591 T DE89300591 T DE 89300591T DE 68911322 T DE68911322 T DE 68911322T DE 68911322 D1 DE68911322 D1 DE 68911322D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing processes
- epitaxial substrate
- intensity leds
- leds
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/915—Separating from substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/101—Liquid Phase Epitaxy, LPE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/108—Melt back
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/11—Metal-organic CVD, ruehrwein type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1235588A JPH0770755B2 (ja) | 1988-01-21 | 1988-01-21 | 高輝度led用エピタキシャル基板及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68911322D1 true DE68911322D1 (de) | 1994-01-27 |
DE68911322T2 DE68911322T2 (de) | 1994-04-07 |
Family
ID=11802971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89300591T Expired - Fee Related DE68911322T2 (de) | 1988-01-21 | 1989-01-23 | Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4902356A (de) |
EP (1) | EP0325493B1 (de) |
JP (1) | JPH0770755B2 (de) |
KR (1) | KR0158193B1 (de) |
DE (1) | DE68911322T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4864369A (en) * | 1988-07-05 | 1989-09-05 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light-emitting diode |
JPH0712094B2 (ja) * | 1988-10-19 | 1995-02-08 | 信越半導体株式会社 | 発光半導体素子用エピタキシャルウェーハの製造方法 |
JP2763008B2 (ja) * | 1988-11-28 | 1998-06-11 | 三菱化学株式会社 | ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5389396A (en) * | 1993-08-11 | 1995-02-14 | Northwestern University | InGaAsP/GaAs diode laser |
US5384151A (en) * | 1993-08-11 | 1995-01-24 | Northwestern University | InGaAsP/GaAs diode laser |
US5639674A (en) * | 1994-03-14 | 1997-06-17 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element and method for manufacturing therefor |
US5483085A (en) * | 1994-05-09 | 1996-01-09 | Motorola, Inc. | Electro-optic integrated circuit with diode decoder |
JP2833479B2 (ja) * | 1994-06-16 | 1998-12-09 | 信越半導体株式会社 | 液相エピタキシャル成長法GaP単結晶層中のSi濃度制御方法 |
US5410178A (en) * | 1994-08-22 | 1995-04-25 | Northwestern University | Semiconductor films |
US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
US5650635A (en) * | 1995-07-14 | 1997-07-22 | Northwestern University | Multiple stacked Sb-based heterostructures |
JP2000516768A (ja) | 1996-08-07 | 2000-12-12 | シーメンス アクチエンゲゼルシヤフト | 赤外線を発光する発光ダイオードの製造方法 |
GB2318680B (en) * | 1996-10-24 | 2001-11-07 | Univ Surrey | Optoelectronic semiconductor devices |
EP2270887B1 (de) * | 2003-04-30 | 2020-01-22 | Cree, Inc. | Hochleistungs-lichtemitter-verkapselungen mit kompakter optik |
US7791061B2 (en) * | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7332365B2 (en) * | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
US7932111B2 (en) * | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
EP2033235B1 (de) | 2006-05-26 | 2017-06-21 | Cree, Inc. | Festkörper-leuchtbauelement |
CN101589268A (zh) | 2006-05-31 | 2009-11-25 | 科锐Led照明科技公司 | 照明装置和照明方法 |
JP2010502014A (ja) * | 2006-08-23 | 2010-01-21 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明装置、および照明方法 |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
EP2095011A1 (de) | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Beleuchtungsanordnung und beleuchtungsverfahren |
US8337045B2 (en) * | 2006-12-04 | 2012-12-25 | Cree, Inc. | Lighting device and lighting method |
JP5431320B2 (ja) * | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
US8617997B2 (en) * | 2007-08-21 | 2013-12-31 | Cree, Inc. | Selective wet etching of gold-tin based solder |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US29648A (en) * | 1860-08-14 | Improvement in sewing-machine needles | ||
US3636617A (en) * | 1970-03-23 | 1972-01-25 | Monsanto Co | Method for fabricating monolithic light-emitting semiconductor diodes and arrays thereof |
NL7117428A (de) * | 1970-12-23 | 1972-06-27 | ||
US3981073A (en) * | 1973-06-21 | 1976-09-21 | Varian Associates | Lateral semiconductive device and method of making same |
US4118857A (en) * | 1977-01-12 | 1978-10-10 | The United States Of America As Represented By The Secretary Of The Army | Flipped method for characterization of epitaxial layers |
JPS5423391A (en) * | 1977-07-22 | 1979-02-21 | Nec Corp | Gallium-arsenic semiconductor element |
US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
US4269635A (en) * | 1977-12-28 | 1981-05-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
JPS5635410A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Method and device for manufacturing semiconductor device |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
US4477294A (en) * | 1981-05-06 | 1984-10-16 | The United States Of America As Represented By The Secretary Of The Army | Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode |
JPS58162033A (ja) * | 1982-03-20 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体層形成法 |
US4468850A (en) * | 1982-03-29 | 1984-09-04 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
JPS59114885A (ja) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6053011A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 半導体積層構造の製造方法 |
JPH0634409B2 (ja) * | 1984-01-20 | 1994-05-02 | 富士通株式会社 | 発光ダイオ−ド |
US4706101A (en) * | 1984-10-27 | 1987-11-10 | Kabushiki Kaisha Toshiba | Light emitting diode formed of a compound semiconductor material |
JPS61135170A (ja) * | 1984-12-05 | 1986-06-23 | Sharp Corp | 発光ダイオ−ドの製造方法 |
FR2574601B1 (fr) * | 1984-12-11 | 1987-07-17 | Menigaux Louis | Procede de fabrication d'un laser a semi-conducteur a ruban enterre |
JPS61198789A (ja) * | 1985-02-28 | 1986-09-03 | Stanley Electric Co Ltd | 光半導体素子の連続製造方法 |
JPS62166586A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 半導体発光素子とその製造方法 |
JPS62171167A (ja) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
-
1988
- 1988-01-21 JP JP1235588A patent/JPH0770755B2/ja not_active Expired - Fee Related
-
1989
- 1989-01-19 US US07/299,094 patent/US4902356A/en not_active Expired - Lifetime
- 1989-01-20 KR KR1019890000603A patent/KR0158193B1/ko not_active IP Right Cessation
- 1989-01-23 DE DE89300591T patent/DE68911322T2/de not_active Expired - Fee Related
- 1989-01-23 EP EP89300591A patent/EP0325493B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0325493A3 (en) | 1990-08-22 |
DE68911322T2 (de) | 1994-04-07 |
KR0158193B1 (en) | 1998-12-01 |
EP0325493B1 (de) | 1993-12-15 |
JPH01187883A (ja) | 1989-07-27 |
EP0325493A2 (de) | 1989-07-26 |
JPH0770755B2 (ja) | 1995-07-31 |
US4902356A (en) | 1990-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8380 | Miscellaneous part iii |
Free format text: DER INHABER IST ZU AENDERN IN: MITSUBISHI KASEI CORP., TOKIO/TOKYO, JP |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |