DE68911322D1 - Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren. - Google Patents

Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren.

Info

Publication number
DE68911322D1
DE68911322D1 DE89300591T DE68911322T DE68911322D1 DE 68911322 D1 DE68911322 D1 DE 68911322D1 DE 89300591 T DE89300591 T DE 89300591T DE 68911322 T DE68911322 T DE 68911322T DE 68911322 D1 DE68911322 D1 DE 68911322D1
Authority
DE
Germany
Prior art keywords
manufacturing processes
epitaxial substrate
intensity leds
leds
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89300591T
Other languages
English (en)
Other versions
DE68911322T2 (de
Inventor
Masahiro Mitsubishi Mo Noguchi
Hideki C O Mitsubishi Mo Gotoh
Kenji C O Mitsubishi Shimoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Polytec Co
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Polytec Co, Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Polytec Co
Application granted granted Critical
Publication of DE68911322D1 publication Critical patent/DE68911322D1/de
Publication of DE68911322T2 publication Critical patent/DE68911322T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/101—Liquid Phase Epitaxy, LPE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/108—Melt back
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE89300591T 1988-01-21 1989-01-23 Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren. Expired - Fee Related DE68911322T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1235588A JPH0770755B2 (ja) 1988-01-21 1988-01-21 高輝度ｌｅｄ用エピタキシャル基板及びその製造方法

Publications (2)

Publication Number Publication Date
DE68911322D1 true DE68911322D1 (de) 1994-01-27
DE68911322T2 DE68911322T2 (de) 1994-04-07

Family

ID=11802971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89300591T Expired - Fee Related DE68911322T2 (de) 1988-01-21 1989-01-23 Epitaxiales Substrat für hochintensive LEDS und Herstellungsverfahren.

Country Status (5)

Country Link
US (1) US4902356A (de)
EP (1) EP0325493B1 (de)
JP (1) JPH0770755B2 (de)
KR (1) KR0158193B1 (de)
DE (1) DE68911322T2 (de)

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US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
JPH0712094B2 (ja) * 1988-10-19 1995-02-08 信越半導体株式会社 発光半導体素子用エピタキシャルウェーハの製造方法
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5389396A (en) * 1993-08-11 1995-02-14 Northwestern University InGaAsP/GaAs diode laser
US5384151A (en) * 1993-08-11 1995-01-24 Northwestern University InGaAsP/GaAs diode laser
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
US5483085A (en) * 1994-05-09 1996-01-09 Motorola, Inc. Electro-optic integrated circuit with diode decoder
JP2833479B2 (ja) * 1994-06-16 1998-12-09 信越半導体株式会社 液相エピタキシャル成長法ＧａＰ単結晶層中のＳｉ濃度制御方法
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
JP2000516768A (ja) 1996-08-07 2000-12-12 シーメンス アクチエンゲゼルシヤフト 赤外線を発光する発光ダイオードの製造方法
GB2318680B (en) * 1996-10-24 2001-11-07 Univ Surrey Optoelectronic semiconductor devices
EP2270887B1 (de) * 2003-04-30 2020-01-22 Cree, Inc. Hochleistungs-lichtemitter-verkapselungen mit kompakter optik
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
EP2033235B1 (de) 2006-05-26 2017-06-21 Cree, Inc. Festkörper-leuchtbauelement
CN101589268A (zh) 2006-05-31 2009-11-25 科锐Led照明科技公司 照明装置和照明方法
JP2010502014A (ja) * 2006-08-23 2010-01-21 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および照明方法
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
EP2095011A1 (de) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Beleuchtungsanordnung und beleuchtungsverfahren
US8337045B2 (en) * 2006-12-04 2012-12-25 Cree, Inc. Lighting device and lighting method
JP5431320B2 (ja) * 2007-07-17 2014-03-05 クリー インコーポレイテッド 内部光学機能を備えた光学素子およびその製造方法
US8617997B2 (en) * 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes

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US4118857A (en) * 1977-01-12 1978-10-10 The United States Of America As Represented By The Secretary Of The Army Flipped method for characterization of epitaxial layers
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Also Published As

Publication number Publication date
EP0325493A3 (en) 1990-08-22
DE68911322T2 (de) 1994-04-07
KR0158193B1 (en) 1998-12-01
EP0325493B1 (de) 1993-12-15
JPH01187883A (ja) 1989-07-27
EP0325493A2 (de) 1989-07-26
JPH0770755B2 (ja) 1995-07-31
US4902356A (en) 1990-02-20

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Legal Events

Date Code Title Description
8380 Miscellaneous part iii

Free format text: DER INHABER IST ZU AENDERN IN: MITSUBISHI KASEI CORP., TOKIO/TOKYO, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee