DE68910994D1 - Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher. - Google Patents

Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher.

Info

Publication number
DE68910994D1
DE68910994D1 DE89102251T DE68910994T DE68910994D1 DE 68910994 D1 DE68910994 D1 DE 68910994D1 DE 89102251 T DE89102251 T DE 89102251T DE 68910994 T DE68910994 T DE 68910994T DE 68910994 D1 DE68910994 D1 DE 68910994D1
Authority
DE
Germany
Prior art keywords
setting
circuit
operating mode
dram memory
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89102251T
Other languages
English (en)
Other versions
DE68910994T2 (de
Inventor
Haruki Toda
Shigeo Ohshima
Tatsuo Ikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68910994D1 publication Critical patent/DE68910994D1/de
Publication of DE68910994T2 publication Critical patent/DE68910994T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Artificial Intelligence (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Dram (AREA)
DE89102251T 1988-02-12 1989-02-09 Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher. Expired - Fee Related DE68910994T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63030441A JPH01205788A (ja) 1988-02-12 1988-02-12 半導体集積回路

Publications (2)

Publication Number Publication Date
DE68910994D1 true DE68910994D1 (de) 1994-01-13
DE68910994T2 DE68910994T2 (de) 1994-05-05

Family

ID=12304018

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89102251T Expired - Fee Related DE68910994T2 (de) 1988-02-12 1989-02-09 Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher.

Country Status (5)

Country Link
US (1) US4984216A (de)
EP (1) EP0328110B1 (de)
JP (1) JPH01205788A (de)
KR (1) KR920008032B1 (de)
DE (1) DE68910994T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036495A (en) * 1989-12-28 1991-07-30 International Business Machines Corp. Multiple mode-set for IC chip
JPH05506526A (ja) * 1990-01-05 1993-09-22 マスパー・コンピューター・コーポレイション クワッドクロスバー及びハイパーバーパーソナリティを備えるラウタチップ
JP2744115B2 (ja) * 1990-05-21 1998-04-28 株式会社東芝 疑似スタティックｒａｍの制御回路
US5255381A (en) * 1990-07-03 1993-10-19 Digital Equipment Corporation Mode switching for a memory system with diagnostic scan
US5313623A (en) * 1990-07-03 1994-05-17 Digital Equipment Corporation Method and apparatus for performing diagnosis scanning of a memory unit regardless of the state of the system clock and without affecting the store data
US5299203A (en) * 1990-08-17 1994-03-29 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a flag for indicating test mode
DE69130210T2 (de) * 1990-11-16 1999-01-21 Fujitsu Ltd., Kawasaki, Kanagawa Halbleiterspeicher mit hochgeschwindigkeitsadressendekodierer
JP2556208B2 (ja) * 1991-03-19 1996-11-20 富士通株式会社 レベル変換回路
DE4114744C1 (de) * 1991-05-06 1992-05-27 Siemens Ag, 8000 Muenchen, De
US5262998A (en) * 1991-08-14 1993-11-16 Micron Technology, Inc. Dynamic random access memory with operational sleep mode
TW212243B (de) * 1991-11-15 1993-09-01 Hitachi Seisakusyo Kk
US5379261A (en) * 1993-03-26 1995-01-03 United Memories, Inc. Method and circuit for improved timing and noise margin in a DRAM
US5457659A (en) * 1994-07-19 1995-10-10 Micron Technology, Inc. Programmable dynamic random access memory (DRAM)
KR0119886B1 (ko) * 1994-07-27 1997-10-17 김광호 반도체 메모리 장치의 모드설정회로 및 그 방법
KR100192568B1 (ko) * 1995-01-25 1999-06-15 윤종용 반도체 메모리장치의 어드레스 버퍼회로
US5657293A (en) * 1995-08-23 1997-08-12 Micron Technology, Inc. Integrated circuit memory with back end mode disable
KR100218734B1 (ko) * 1996-05-06 1999-09-01 김영환 싱크로노스 메모리의 내부펄스 신호발생 방법 및 그장치
JP3725270B2 (ja) * 1996-12-13 2005-12-07 富士通株式会社 半導体装置
JP4077295B2 (ja) * 2002-10-23 2008-04-16 株式会社東芝 同期型半導体記憶装置及びその動作方法
US7557604B2 (en) * 2005-05-03 2009-07-07 Oki Semiconductor Co., Ltd. Input circuit for mode setting
KR100880925B1 (ko) 2007-09-03 2009-02-04 주식회사 하이닉스반도체 반도체 집적 회로의 주기 신호 발생 장치
JP4412508B2 (ja) * 2007-10-04 2010-02-10 Ｎｅｃエレクトロニクス株式会社 半導体回路
US7859931B2 (en) 2007-12-14 2010-12-28 Hynix Semiconductor Inc. Refresh period signal generator with digital temperature information generation function
KR101053522B1 (ko) 2009-03-13 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치의 리프레쉬 제어 회로

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115094A (ja) * 1983-11-16 1985-06-21 Fujitsu Ltd ダイナミツクランダムアクセスメモリ装置
JPS6212991A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 半導体記憶装置
JPH0736269B2 (ja) * 1985-08-30 1995-04-19 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0328110A2 (de) 1989-08-16
EP0328110A3 (de) 1991-10-09
JPH01205788A (ja) 1989-08-18
DE68910994T2 (de) 1994-05-05
KR920008032B1 (ko) 1992-09-21
EP0328110B1 (de) 1993-12-01
US4984216A (en) 1991-01-08
KR890013579A (ko) 1989-09-25

Similar Documents

Publication Publication Date Title
DE68910994D1 (de) Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher.
NO166019C (no) Hukommelses-system.
DE3485166D1 (de) Speichersteuergeraet.
DE3882278D1 (de) Mos-speicher.
DE69019697D1 (de) Reparierbare Speicherschaltung.
DE68917953D1 (de) Dekodierer- und Treiberschaltung für Halbleiterspeicher.
DE3485038D1 (de) Mos-speicher.
DE3885594D1 (de) Speicherprüfgerät.
DE3485174D1 (de) Halbleiterspeicheranordnung.
DE3381025D1 (de) Schaltung zur speichersicherungspruefung.
DE69018563D1 (de) Speicherselbsttest.
DE3779705D1 (de) Integrierte speicherschaltung mit blockadressierung.
DE3484180D1 (de) Halbleiterspeicheranordnung.
DE3484174D1 (de) Programmierbare festwertspeicheranordnung.
DE3481355D1 (de) Halbleiterspeicheranordnung.
DE3869158D1 (de) Speicher-leseschaltung.
DE3852131D1 (de) Speicherkarte.
DE3787357D1 (de) Steuerschaltung für Halbleiterspeicher.
DE3887823D1 (de) Halbleiterspeicher.
DE69020764D1 (de) Speicheradressierung.
DE3783100D1 (de) Festwertspeicheranordnung.
DE68919402D1 (de) Speicherkarte.
DE3581596D1 (de) Festwertspeicherschaltung.
DE3886685D1 (de) Schaltung zur Impuls-Konditionierung.
DE3482529D1 (de) Nur-lesespeicher.

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee