DE68907295D1 - Verfahren zum herstellen einer supraleitenden duennschicht vom wismut-typ. - Google Patents
Verfahren zum herstellen einer supraleitenden duennschicht vom wismut-typ.Info
- Publication number
- DE68907295D1 DE68907295D1 DE8989402352T DE68907295T DE68907295D1 DE 68907295 D1 DE68907295 D1 DE 68907295D1 DE 8989402352 T DE8989402352 T DE 8989402352T DE 68907295 T DE68907295 T DE 68907295T DE 68907295 D1 DE68907295 D1 DE 68907295D1
- Authority
- DE
- Germany
- Prior art keywords
- wismut
- super
- producing
- type
- thick layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052797 bismuth Inorganic materials 0.000 title 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/742—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/782—Bismuth-, e.g. BiCaSrCuO
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214130A JP2664070B2 (ja) | 1988-08-29 | 1988-08-29 | 複合酸化物超電導薄膜の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68907295D1 true DE68907295D1 (de) | 1993-07-29 |
DE68907295T2 DE68907295T2 (de) | 1993-11-25 |
Family
ID=16650722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89402352T Expired - Fee Related DE68907295T2 (de) | 1988-08-29 | 1989-08-29 | Verfahren zum Herstellen einer supraleitenden Dünnschicht vom Wismut-Typ. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5051398A (de) |
EP (1) | EP0357500B1 (de) |
JP (1) | JP2664070B2 (de) |
KR (1) | KR900004047A (de) |
CN (1) | CN1018311B (de) |
AU (1) | AU615102B2 (de) |
CA (1) | CA1337719C (de) |
DE (1) | DE68907295T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68921138T3 (de) * | 1988-10-03 | 1998-07-16 | Sumitomo Electric Industries | Verfahren zur Herstellung eines Oxidverbindungssupraleiters des Bi-Sr-Ca-Cu-Systems. |
CA2037481C (en) * | 1990-03-08 | 1998-11-10 | Noriki Hayashi | Method of preparing oxide superconducting film |
EP0643400B1 (de) * | 1991-06-04 | 1998-01-21 | Matsushita Electric Industrial Co., Ltd. | Herstellungsverfahren für Dünnschicht-Supraleiter |
US7617474B2 (en) * | 1997-09-17 | 2009-11-10 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
JP4172040B2 (ja) * | 2004-03-23 | 2008-10-29 | 独立行政法人科学技術振興機構 | 固相フラックスエピタキシー成長法 |
CN113322514A (zh) * | 2021-05-24 | 2021-08-31 | 沈阳大学 | 分子束外延技术制备(00l)择优取向低熔点铋薄膜的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772349B2 (ja) * | 1987-05-12 | 1995-08-02 | 住友電気工業株式会社 | 大面積化合物薄膜の作製方法および装置 |
ATE115104T1 (de) * | 1988-02-05 | 1994-12-15 | Hoechst Ag | Supraleiter und verfahren zu seiner herstellung. |
US4880771A (en) * | 1988-02-12 | 1989-11-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Bismuth-lead-strontium-calcium-cuprate superconductors |
JPH0286014A (ja) * | 1988-06-17 | 1990-03-27 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜と、その成膜方法 |
-
1988
- 1988-08-29 JP JP63214130A patent/JP2664070B2/ja not_active Expired - Fee Related
-
1989
- 1989-08-28 CN CN89107753A patent/CN1018311B/zh not_active Expired
- 1989-08-28 US US07/399,739 patent/US5051398A/en not_active Expired - Lifetime
- 1989-08-28 CA CA000609633A patent/CA1337719C/en not_active Expired - Fee Related
- 1989-08-29 DE DE89402352T patent/DE68907295T2/de not_active Expired - Fee Related
- 1989-08-29 EP EP89402352A patent/EP0357500B1/de not_active Expired - Lifetime
- 1989-08-29 KR KR1019890012294A patent/KR900004047A/ko not_active Application Discontinuation
- 1989-08-29 AU AU40861/89A patent/AU615102B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CN1041237A (zh) | 1990-04-11 |
US5051398A (en) | 1991-09-24 |
KR900004047A (ko) | 1990-03-27 |
CA1337719C (en) | 1995-12-12 |
JPH0264021A (ja) | 1990-03-05 |
CN1018311B (zh) | 1992-09-16 |
AU615102B2 (en) | 1991-09-19 |
AU4086189A (en) | 1990-03-01 |
DE68907295T2 (de) | 1993-11-25 |
EP0357500B1 (de) | 1993-06-23 |
EP0357500A1 (de) | 1990-03-07 |
JP2664070B2 (ja) | 1997-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3686453D1 (de) | Verfahren zum herstellen einer duennen halbleiterschicht. | |
DE3585180D1 (de) | Verfahren zum herstellen einer halbleiteranordnung mit leiterschichten. | |
DE68911621D1 (de) | Verfahren zum Herstellen einer Einrichtung. | |
DE3780369D1 (de) | Verfahren zum herstellen einer halbleiterstruktur. | |
DE3686600D1 (de) | Verfahren zum herstellen einer harzumhuellten halbleiteranordnung. | |
DE3483280D1 (de) | Verfahren zum herstellen einer mehrschicht-halbleiteranordnung. | |
DE3783405D1 (de) | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. | |
DE3586732D1 (de) | Verfahren zum herstellen einer dreidimentionaler halbleiteranordung. | |
DE3579174D1 (de) | Verfahren zum herstellen einer halbleiterspeicherstruktur und halbleiterspeicherstruktur. | |
DE3583934D1 (de) | Verfahren zum herstellen einer halbleiterverbundanordnung. | |
DE3584757D1 (de) | Verfahren zum herstellen einer zwei-wannen-cmos-halbleiterstruktur. | |
DE68917995D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE68919549D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE68922508D1 (de) | Verfahren zum herstellung einer Kunststoffampulle. | |
DE3586109D1 (de) | Verfahren zum herstellen einer verbindungsstruktur von einer halbleiteranordnung. | |
DE3685970D1 (de) | Verfahren zum herstellen eines halbleiterbauelements. | |
DE3483579D1 (de) | Verfahren zum herstellen einer leiterbahn. | |
DE3765131D1 (de) | Formgepresster gegenstand mit einer mehrschichtstruktur sowie verfahren und vorrichtung zum herstellen desselben. | |
DE3671580D1 (de) | Verfahren zum herstellen eines mehrschicht-keramiksubstrats. | |
DE3889024D1 (de) | Verfahren zum Herstellen einer supraleitenden Dünnschicht. | |
DE68920094D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE68906034D1 (de) | Verfahren zum herstellen einer halbleiteranordnung. | |
DE68914061D1 (de) | Verfahren zum Niederschlagen einer Wolframschicht. | |
DE3582627D1 (de) | Verfahren zum herstellen einer waermeschrumpfenden polypropylenfolie. | |
DE3671324D1 (de) | Verfahren zum herstellen einer halbleiteranordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |