CN1041237A - 铋系复合氧化物超导薄膜的成膜方法 - Google Patents
铋系复合氧化物超导薄膜的成膜方法 Download PDFInfo
- Publication number
- CN1041237A CN1041237A CN89107753A CN89107753A CN1041237A CN 1041237 A CN1041237 A CN 1041237A CN 89107753 A CN89107753 A CN 89107753A CN 89107753 A CN89107753 A CN 89107753A CN 1041237 A CN1041237 A CN 1041237A
- Authority
- CN
- China
- Prior art keywords
- film
- described method
- composite oxides
- mentioned
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000010408 film Substances 0.000 title description 44
- 239000010409 thin film Substances 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 title description 7
- 239000002131 composite material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- 238000005289 physical deposition Methods 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims description 3
- 239000011812 mixed powder Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000002887 superconductor Substances 0.000 description 12
- 229910014454 Ca-Cu Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910002480 Cu-O Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005668 Josephson effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 206010000234 Abortion spontaneous Diseases 0.000 description 1
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical group 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 208000015994 miscarriage Diseases 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 208000000995 spontaneous abortion Diseases 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/742—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/775—High tc, above 30 k, superconducting material
- Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
- Y10S505/782—Bismuth-, e.g. BiCaSrCuO
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
利用物理沉积法在基板上将至少含有铋和铜的复合氧化物制成薄膜的成膜方法,其特征是成膜时的基板温度在670~750℃范围内。
Description
本发明是关于含铋复合氧化物超导薄膜的成膜方法,更详细地说,是关于将具有高超导临界温度(Tc)的Bi-Sr-Ca-Cu系等含铋复合氧化物在基板上制成复合氧化物超导材料薄膜的成膜方法的改进。
采用本发明方法进行成膜的薄膜,具有极高的超导临界电流密度(Jc)。
被人们称作电子相转变的超导现象,是在特定条件下导体的电阻为零状态、显示完全抗磁性的现象。在超导现象的有代表性的应用领域即电子技术领域中,已提出各种超导元件并正在开发、研制。作为代表性元件可以举出的有,在超导材料彼此弱结合的情况下,靠外加电流产生宏观量子效应的约瑟夫逊效应而加以利用的元件。另外,隧道结合型约瑟夫逊元件,由于超导材料的能隙小,可望作为极高速的低电能损耗的开关元件。而且由于对于电磁波和磁场的约瑟夫逊效应是作为精确的量子现象出现的,因此,予计还可将约瑟夫逊元件用作磁场、微波、放射线等的超高灵敏度的敏感元件。在超高速电子计算机中,每单位面积的电力消耗达到了冷却能力的极限,因此迫切期待开发超导元件,而且随电子电路的集成度提高,迫切期待使用无电流损耗的超导材料作为配线材料。但是,超导材料的超导临界温度Tc长期以来不能超过Nb3Ge的23K。
Bednorz和Muller发现了复合氧化物系高Tc超导材料,表明存在高温超导体(Bednorz,Muller,“Z·Phys”B64,1986年,189页)。
迄今为止,已经知道复合氧化物系陶瓷材料本身显示超导电性。例如,美国专利No 3932315中记载了Ba-Pb-Bi系复合氧化物显示超导电性,此外在特开昭60-173885中记载了Ba-Bi系复合氧化物显示超导电性。但是,至今所知道的复合氧化物超导材料的Tc在10k以下,因而都是极低的,要获得超导现象必须在昂贵且稀少的液氦(沸点4.2k)中使用。
Bednorz和Muller发现的氧化物超导体是(La,Ba)2CuO4,它被称为K2NiF4型氧化物,具有与过去已知的钙钛型超导氧化物类似的晶体结构,其Tc约为30k,显著高于过去的超导材料。在此之后,陆续报导了许多复合氧化物系高温超导体,从而使高温超导体有可能进入实用化。
チユ-等人曾报导称作YBCO的另一种系列的复合氧化物,该复合氧化物以YBa2Cu3O7-X表示,它具有90k级的临界温度(Physical Review Letters,(58)9,908页,1987年)。
前田等人曾报导Bi-Sr-Ca-Cu系的超导复合氧化物(Japanese Journal Of Applied Physics,(27)2,1209-1210页)。
这种铋系复合氧化物不仅具有化学稳定性,而且在不使用稀土类元素的情况下即可达到100k以上的Tc,因而具有降低制造成本的优点。
通常,这些复合氧化物超导材料都能够利用固相反应来制造。即将金属元素的氧化物或碳酸盐等的粉末按规定的金属元素原子比例混合,然后烧结该原料混合粉末、得到烧结体。
可以利用以这种烧结制造的复合氧化物作为靶的射频溅射法、真空蒸镀法和离子镀法等物理沉积(PVD)方法,在基板上形成薄膜。此外还可以使用合适的蒸发源,利用MBE(分子束外延生长)法或化学汽相淀积法例如热化学汽相淀积法、等离子化学汽相淀积法、光化学汽相淀积法、有机金属化学汽相淀积法等,在基板上进行薄膜的成膜。这些成膜方法一般在成膜之后要在氧气气氛中进行热处理,调整晶体中的氧缺陷。
但是,采用以往方法成膜的超导体薄膜,由于临界电流密度Jc低,难以用作电子元件和电子电路材料。
本发明的目的是,解决上述以往技术的问题,提供具有高临界电流密度Jc的铋系复合氧化物超导薄膜的成膜方法。
本发明的特征是,在利用物理沉积法在基板上将至少含铋和铜的复合氧化物制成薄膜的成膜方法中,成膜的基板温度控制在670-750℃范围内,在670-720℃范围内更好、最好是控制在680-710℃范围内。
本发明的理想实施状态是在成膜后将所得的薄膜进一步在870-910℃、最好是在880-905℃温度范围内进行退火。这种退火处理一般进行10分钟至10小时。此外这种处理最好是在含氧气氛中或氧气气氛中进行。处理的氧气压力通常为1大气压左右。
本发明是以下述发现为基础而完成的,即用物理沉积法形成至少含铋和铜的复合氧化物超导体薄膜时,精确控制基板温度对所获得薄膜的超导电性产生极大影响。
也就是说,利用过去的方法成膜的超导体薄膜例如Bi-Sr-Ca-Cu系复合氧化物超导体薄膜,虽然具有100k以上的高临界温度Tc,但是由于临界电流密度Jc最大为10000A/Cm2左右,所以实用性很差。为了改善铋系复合氧化物超导薄膜的临界电流密度Jc,本发明人进行了大量的研究,结果发现,成膜时的基板温度显著影响膜的性能,通过精确控制这种基板的温度可以大幅度改善临界电流密度Jc。
根据本发明人的实验,如果基板温度超出670-750℃范围(较好的范围是670-720℃、最好的是680-710℃)之外,则所获得薄膜的临界电流密度Jc急剧降低。
另外,通过这些研究发现,成膜之后在规定条件下进行退火处理是极为有效的。也就是说,在这种退火处理时,必须在退火处理气氛中在870-910℃温度范围、较好在880-905℃温度范围内保持规定的时间。在上述范围以外的条件下进行处理时,根据条件的不同,有时会使薄膜特性降低。
用以形成本发明薄膜的理想基板是MgO、SrTiO3、LaAlO3和LaGaO3等的单晶体。这些单晶体基板的{100}面或{110}面用作成膜面是令人满意的。
本发明的方法可以采用物理沉积法实现。作为物理沉积法,可以采用溅射法、真空蒸镀法和离子镀法,尤其是溅射法,其中又以射频磁控溅射法最为理想。
用于溅射的靶最好是构成薄膜的复合氧化物中的构成金属元素的复合氧化物的烧结体或烧结粉末,这种烧结体或烧结粉末可以由含至少一种构成薄膜的复合氧化物中的构成金属元素的氧化物、碳酸盐、硝酸盐和氟化物以所要求的构成金属元素的原子比混合而获得的混合粉末经烧结来获得。溅射气体最好是氩气和氧气的混合气,氧气的理想比例是10-60%。这种溅射气体的理想压力是1×10-2-1×10-1乇。另外,在溅射时加在靶上的高频电能最好是在0.064-1.27W/Cm2范围内。溅射进行的时间为获得所希望膜厚的必要时间,理想的成膜速度通常在0.05-1 /分的范围内。
在使用真空蒸镀法和离子镀法时,可以使用上述烧结体或烧结粉末作为蒸发源。
本发明能够适用于含铋的任意复合氧化物,特别是适用于Bi、Sr、Ca和Cu的复合氧化物。这种Bi-Sr-Ca-Cu系复合氧化物由下述通式表示:
〔式中m、n、x和y分别表示满足6≤m≤10、4≤n≤8、0<x<1、-2≤y≤+2的范围的数,p=(6+m+n)〕。可以列举下述复合氧化物作为这种系列的复合氧化物的例子:
本发明也适用于上述以外的含铋复合氧化物。可以举出象下述这样的系作为它的例子:
Bi-Y-Ba-Cu-O系 (100k)
Bi-Pb-Sr-Ca-Cu-O系 (107k)
Bi-(Sr,Ln)-Cu-O系 (30-42k)
(Bi,Tl,Pb)-Ca-Sr-Cu-O系(110k)
(注)Ln表示镧系元系
按照本发明方法成膜的铋系复合氧化物超导薄膜,在保持这种复合氧化物原有的优异临界温度Tc的同时,超导临界电流密度Jc得到大幅度提高。
因而,采用这种薄膜使得制造在液氮温度以上高温工作的以约瑟夫逊元件为代表的各种超导元件成为可能。
下面通过实施例更详细地说明本发明,但实施例不过是本发明的一个例子,不是对本发明的技术范围的任何限定。
实施例
利用磁控溅射法制成Bi-Sr-Ca-Cu系复合氧化物超导薄膜。
将市售的Bi2O3粉末、SrCO3粉末、CaCO3粉末和CuO粉末按Bi∶Sr∶Ca∶Cu(原子比)=1.4∶1.0∶1.0∶1.5的比例进行混合然后在800℃烧结8小时得到Bi-Sr-Ca-Cu-O复合氧化物烧结体,用它作为靶。
另外,基板采用MgO单晶基板,{110}面作为成膜面。
改变基板温度,制成6个试样。各试样的共同成膜条件如下。
溅射气体:氩与氧的混合气
O2/(Ar+O2)=0.2(体积比)
溅射压力:2×10-2乇
高频电能:50W(0.64w/Cm2)
这样得到的试样,通过测定电阻确认各试样的超导现象,然后,测定它们在77.3k时的超导临界电流密度。各试样显示的临界电流密度和各试样成膜时的基板温度一起示于表1。
另外,按照与上述试样中显示最大临界电流密度的试样相同的条件再制成5个试样,这些试样在表2所示的温度条件下、在0.6l/cm2的氧气流中退火处理60分钟,然后同样测定所得薄膜的超导临界电流密度。测定结果也一起示于表2。
表2
因此,成膜时的基板温度和成膜后的退火温度极大地影响Bi-Sr-Ca-Cu系超导薄膜的临界电流密度,通过适当选择这种处理的温度可以显著提高超导薄膜的临界温度。
Claims (15)
1、利用物理沉积法在基板上将至少含有铋和铜的复合氧化物制成薄膜的成膜方法,其特征是成膜时的基板温度在670-750℃范围内。
2、权利要求1所述的方法,其特征是,成膜之后,将所获得的薄膜进一步在870-910℃温度范围内进行退火。
3、权利要求2所述的方法,其特征是,上述退火进行10分钟至10小时。
4、权利要求2或3所述的方法,其特征是,上述退火处理在氧气气氛中进行。
5、权利要求1-4中任一项所述的方法,其特征是,上述基板是MgO、SrTiO3、LaAlO3和LaGaO3的单晶体。
6、权利要求1-5中任一项所述的方法,其特征是,以基板的{100}面或{110}面作为上述薄膜的成膜面。
7、权利要求1-6中任一项所述的方法,其特征是,上述物理沉积法是溅射。
8、权利要求7所述的方法,其特征是,溅射时使用的靶,是构成薄膜的上述复合氧化物中的构成金属元素的复合氧化物烧结体或烧结粉末。
9、权利要求8所述的方法,其特征是,上述烧结体或烧结粉末是至少含有一种构成薄膜的上述复合氧化物中的构成金属元素的氧化物、碳酸盐、硝酸盐、氟化物、以所期望的构成金属元素的原子比混合的混合粉末经烧结而获得的。
10、权利要求7-9中任一项所述的方法,其特征是,溅射气体是氩和氧的混合气,氧的分子百分比是10-60%。
11、权利要求7-10中任一项所述的方法,其特征是,溅射时溅射气体的压力是1×10-2-1×10-1乇。
12、权利要求7-11中任一项所述的方法,其特征是,溅射时加在靶上的外加高频电能是0.064-1.27w/cm2。
13、权利要求7-12中任一项所述的方法,其特征是,成膜速度在0.05-1 /分的范围内。
14、权利要求1-13中任一项所述的方法,其特征是,在基板上成膜的薄膜是Bi、Sr、Ca和Cu的复合氧化物。
15、权利要求14所述的方法,其特征是,上述复合氧化物主要含有由通式Bi4(Sr1-X,Cax)mCunOp-y表示的复合氧化物〔式中m、n、x和y分别表示满足6≤m≤10、4≤n≤8、0<x<1、-2≤y≤+2范围的数,P=(6+m+n)〕。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214130A JP2664070B2 (ja) | 1988-08-29 | 1988-08-29 | 複合酸化物超電導薄膜の作製方法 |
JP214130/88 | 1988-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1041237A true CN1041237A (zh) | 1990-04-11 |
CN1018311B CN1018311B (zh) | 1992-09-16 |
Family
ID=16650722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN89107753A Expired CN1018311B (zh) | 1988-08-29 | 1989-08-28 | 铋系复合氧化物超导薄膜的成膜方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5051398A (zh) |
EP (1) | EP0357500B1 (zh) |
JP (1) | JP2664070B2 (zh) |
KR (1) | KR900004047A (zh) |
CN (1) | CN1018311B (zh) |
AU (1) | AU615102B2 (zh) |
CA (1) | CA1337719C (zh) |
DE (1) | DE68907295T2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100497752C (zh) * | 2004-03-23 | 2009-06-10 | 独立行政法人;科学技术振兴机构 | 固相熔剂外延生长法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68921138T3 (de) * | 1988-10-03 | 1998-07-16 | Sumitomo Electric Industries | Verfahren zur Herstellung eines Oxidverbindungssupraleiters des Bi-Sr-Ca-Cu-Systems. |
CA2037481C (en) * | 1990-03-08 | 1998-11-10 | Noriki Hayashi | Method of preparing oxide superconducting film |
DE69224214T2 (de) * | 1991-06-04 | 1998-04-30 | Matsushita Electric Ind Co Ltd | Herstellungsverfahren für Dünnschicht-Supraleiter |
US7617474B2 (en) * | 1997-09-17 | 2009-11-10 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
CN113322514A (zh) * | 2021-05-24 | 2021-08-31 | 沈阳大学 | 分子束外延技术制备(00l)择优取向低熔点铋薄膜的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772349B2 (ja) * | 1987-05-12 | 1995-08-02 | 住友電気工業株式会社 | 大面積化合物薄膜の作製方法および装置 |
ES2067489T5 (es) * | 1988-02-05 | 1998-08-16 | Hoechst Ag | Superconductores y procedimiento para su produccion. |
US4880771A (en) * | 1988-02-12 | 1989-11-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Bismuth-lead-strontium-calcium-cuprate superconductors |
JPH0286014A (ja) * | 1988-06-17 | 1990-03-27 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜と、その成膜方法 |
-
1988
- 1988-08-29 JP JP63214130A patent/JP2664070B2/ja not_active Expired - Fee Related
-
1989
- 1989-08-28 CA CA000609633A patent/CA1337719C/en not_active Expired - Fee Related
- 1989-08-28 CN CN89107753A patent/CN1018311B/zh not_active Expired
- 1989-08-28 US US07/399,739 patent/US5051398A/en not_active Expired - Lifetime
- 1989-08-29 KR KR1019890012294A patent/KR900004047A/ko not_active Application Discontinuation
- 1989-08-29 EP EP89402352A patent/EP0357500B1/en not_active Expired - Lifetime
- 1989-08-29 DE DE89402352T patent/DE68907295T2/de not_active Expired - Fee Related
- 1989-08-29 AU AU40861/89A patent/AU615102B2/en not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100497752C (zh) * | 2004-03-23 | 2009-06-10 | 独立行政法人;科学技术振兴机构 | 固相熔剂外延生长法 |
Also Published As
Publication number | Publication date |
---|---|
US5051398A (en) | 1991-09-24 |
EP0357500A1 (en) | 1990-03-07 |
JPH0264021A (ja) | 1990-03-05 |
CN1018311B (zh) | 1992-09-16 |
EP0357500B1 (en) | 1993-06-23 |
DE68907295D1 (de) | 1993-07-29 |
KR900004047A (ko) | 1990-03-27 |
CA1337719C (en) | 1995-12-12 |
AU4086189A (en) | 1990-03-01 |
AU615102B2 (en) | 1991-09-19 |
JP2664070B2 (ja) | 1997-10-15 |
DE68907295T2 (de) | 1993-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3855246T2 (de) | Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung | |
EP0299870B1 (en) | Method for preparing a superconducting thin film | |
EP0327493B1 (en) | Epitaxial arrangement of high tc superconductors on silicon | |
US5179070A (en) | Semiconductor substrate having a superconducting thin film with a buffer layer in between | |
CN1151513C (zh) | 具有低超导各向异性的掺镁高温超导体及其制造方法 | |
EP0285107A2 (en) | Superconductive material | |
CN1041237A (zh) | 铋系复合氧化物超导薄膜的成膜方法 | |
US5149687A (en) | Method for making oriented bismuth and thallium superconductors comprising cold pressing at 700 MPa | |
US5034359A (en) | Insulating composition | |
EP0341148B1 (en) | A semiconductor substrate having a superconducting thin film | |
JP3289134B2 (ja) | 不確定性原理に基づく低異方性高温超伝導体とその製造方法 | |
EP0293836B1 (en) | Method for preparing thin film of superconductor | |
US5206214A (en) | Method of preparing thin film of superconductor | |
EP0330585A2 (en) | Method for preparing a superconducting material | |
US5512542A (en) | Metallic oxide with boron and process for manufacturing the same | |
JP2797186B2 (ja) | 超電導体層を有する半導体基板 | |
US6573220B1 (en) | Superconductor with enhanced current density and method for making such a superconductor | |
EP0516148A2 (en) | Oxide superconductive material and method of preparing the same | |
JP2645730B2 (ja) | 超電導薄膜 | |
US6482775B2 (en) | Oxide superconductor | |
EP0366510A1 (en) | Process for preparing superconductor of compound oxide of Bi-Sr-Ca-Cu system | |
JP3258824B2 (ja) | 金属酸化物材料、それを用いた超伝導接合素子及び超伝導素子用基板 | |
EP0323342A2 (en) | A semiconductor substrate having a superconducting thin film | |
JP3058515B2 (ja) | 超電導ジョセフソン素子およびその製法 | |
JP3247914B2 (ja) | 金属酸化物材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C13 | Decision | ||
GR02 | Examined patent application | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
OR01 | Other related matters | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |