DE3585180D1 - Verfahren zum herstellen einer halbleiteranordnung mit leiterschichten. - Google Patents
Verfahren zum herstellen einer halbleiteranordnung mit leiterschichten.Info
- Publication number
- DE3585180D1 DE3585180D1 DE8585108953T DE3585180T DE3585180D1 DE 3585180 D1 DE3585180 D1 DE 3585180D1 DE 8585108953 T DE8585108953 T DE 8585108953T DE 3585180 T DE3585180 T DE 3585180T DE 3585180 D1 DE3585180 D1 DE 3585180D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor arrangement
- layer layers
- layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59147510A JPH069199B2 (ja) | 1984-07-18 | 1984-07-18 | 配線構造体およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3585180D1 true DE3585180D1 (de) | 1992-02-27 |
Family
ID=15431982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585108953T Expired - Lifetime DE3585180D1 (de) | 1984-07-18 | 1985-07-17 | Verfahren zum herstellen einer halbleiteranordnung mit leiterschichten. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4792842A (de) |
EP (1) | EP0168828B1 (de) |
JP (1) | JPH069199B2 (de) |
KR (1) | KR930007836B1 (de) |
DE (1) | DE3585180D1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900005785B1 (ko) * | 1985-05-13 | 1990-08-11 | 닛뽄덴신덴와 가부시끼가이샤 | 평탄성 박막의 제조방법 |
US4884123A (en) * | 1987-02-19 | 1989-11-28 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
US5175608A (en) * | 1987-06-30 | 1992-12-29 | Hitachi, Ltd. | Method of and apparatus for sputtering, and integrated circuit device |
EP0300414B1 (de) * | 1987-07-20 | 1994-10-12 | Nippon Telegraph And Telephone Corporation | Methode zur Verbindung von Leitungen durch Verbindungslöcher |
JPS6482547A (en) * | 1987-09-24 | 1989-03-28 | Tadahiro Omi | Semiconductor device |
JPH0680736B2 (ja) * | 1987-10-21 | 1994-10-12 | 工業技術院長 | 配線の形成方法 |
US5132775A (en) * | 1987-12-11 | 1992-07-21 | Texas Instruments Incorporated | Methods for and products having self-aligned conductive pillars on interconnects |
US5055423A (en) * | 1987-12-28 | 1991-10-08 | Texas Instruments Incorporated | Planarized selective tungsten metallization system |
US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
FR2634317A1 (fr) * | 1988-07-12 | 1990-01-19 | Philips Nv | Procede pour fabriquer un dispositif semiconducteur ayant au moins un niveau de prise de contact a travers des ouvertures de contact de petites dimensions |
JPH02178923A (ja) * | 1988-12-29 | 1990-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2537413B2 (ja) * | 1989-03-14 | 1996-09-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US6242811B1 (en) | 1989-11-30 | 2001-06-05 | Stmicroelectronics, Inc. | Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature |
US6271137B1 (en) | 1989-11-30 | 2001-08-07 | Stmicroelectronics, Inc. | Method of producing an aluminum stacked contact/via for multilayer |
US5108951A (en) * | 1990-11-05 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Method for forming a metal contact |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US6287963B1 (en) | 1990-11-05 | 2001-09-11 | Stmicroelectronics, Inc. | Method for forming a metal contact |
KR100214036B1 (ko) * | 1991-02-19 | 1999-08-02 | 이데이 노부유끼 | 알루미늄계 배선형성방법 |
JP2946978B2 (ja) * | 1991-11-29 | 1999-09-13 | ソニー株式会社 | 配線形成方法 |
US6051490A (en) * | 1991-11-29 | 2000-04-18 | Sony Corporation | Method of forming wirings |
DE69319993T2 (de) * | 1992-09-22 | 1998-12-10 | Sgs-Thomson Microelectronics, Inc., Carrollton, Tex. | Methode zur Herstellung eines Metallkontaktes |
US5356836A (en) * | 1993-08-19 | 1994-10-18 | Industrial Technology Research Institute | Aluminum plug process |
USRE36475E (en) | 1993-09-15 | 1999-12-28 | Hyundai Electronics Industries Co., Ltd. | Method of forming a via plug in a semiconductor device |
US5409861A (en) * | 1993-09-15 | 1995-04-25 | Hyundai Electronics Industries Co., Ltd. | Method of forming a via plug in a semiconductor device |
KR100281887B1 (ko) * | 1994-01-18 | 2001-03-02 | 윤종용 | 반도체장치의 제조방법 |
SG42438A1 (en) * | 1995-09-27 | 1997-08-15 | Motorola Inc | Process for fabricating a CVD aluminium layer in a semiconductor device |
US5730835A (en) * | 1996-01-31 | 1998-03-24 | Micron Technology, Inc. | Facet etch for improved step coverage of integrated circuit contacts |
US6420786B1 (en) | 1996-02-02 | 2002-07-16 | Micron Technology, Inc. | Conductive spacer in a via |
US6376781B1 (en) | 1996-05-03 | 2002-04-23 | Micron Technology, Inc. | Low resistance contacts fabricated in high aspect ratio openings by resputtering |
US5929526A (en) * | 1997-06-05 | 1999-07-27 | Micron Technology, Inc. | Removal of metal cusp for improved contact fill |
US7253109B2 (en) | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
WO1999027579A1 (en) * | 1997-11-26 | 1999-06-03 | Applied Materials, Inc. | Damage-free sculptured coating deposition |
US6274486B1 (en) | 1998-09-02 | 2001-08-14 | Micron Technology, Inc. | Metal contact and process |
US6423626B1 (en) | 1998-11-02 | 2002-07-23 | Micron Technology, Inc. | Removal of metal cusp for improved contact fill |
US6261946B1 (en) * | 1999-01-05 | 2001-07-17 | Advanced Micro Devices, Inc. | Method for forming semiconductor seed layers by high bias deposition |
US6537427B1 (en) | 1999-02-04 | 2003-03-25 | Micron Technology, Inc. | Deposition of smooth aluminum films |
US9240378B2 (en) * | 2014-05-16 | 2016-01-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of forming a copper layer using physical vapor deposition |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
US4161430A (en) * | 1978-12-04 | 1979-07-17 | Burroughs Corporation | Method of forming integrated circuit metal interconnect structure employing molybdenum on aluminum |
US4158613A (en) * | 1978-12-04 | 1979-06-19 | Burroughs Corporation | Method of forming a metal interconnect structure for integrated circuits |
JPS58108738A (ja) * | 1981-12-22 | 1983-06-28 | Seiko Instr & Electronics Ltd | 半導体装置用電極の製造方法 |
JPS592352A (ja) * | 1982-06-28 | 1984-01-07 | Toshiba Corp | 半導体装置の製造方法 |
FR2530383A1 (fr) * | 1982-07-13 | 1984-01-20 | Thomson Csf | Circuit integre monolithique comprenant une partie logique schottky et une memoire programmable a fusibles |
JPH0620067B2 (ja) * | 1982-10-08 | 1994-03-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPS60201655A (ja) * | 1984-03-27 | 1985-10-12 | Seiko Epson Corp | 半導体装置 |
-
1984
- 1984-07-18 JP JP59147510A patent/JPH069199B2/ja not_active Expired - Lifetime
-
1985
- 1985-07-12 KR KR1019850004971A patent/KR930007836B1/ko not_active IP Right Cessation
- 1985-07-17 EP EP85108953A patent/EP0168828B1/de not_active Expired - Lifetime
- 1985-07-17 DE DE8585108953T patent/DE3585180D1/de not_active Expired - Lifetime
-
1987
- 1987-11-24 US US07/129,393 patent/US4792842A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0168828B1 (de) | 1992-01-15 |
EP0168828A2 (de) | 1986-01-22 |
JPS6127657A (ja) | 1986-02-07 |
KR930007836B1 (ko) | 1993-08-20 |
JPH069199B2 (ja) | 1994-02-02 |
US4792842A (en) | 1988-12-20 |
EP0168828A3 (en) | 1987-08-12 |
KR860001495A (ko) | 1986-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |