DE68903674D1 - Monolithische druckempfindliche integrierte schaltung und verfahren zu deren herstellung. - Google Patents

Monolithische druckempfindliche integrierte schaltung und verfahren zu deren herstellung.

Info

Publication number
DE68903674D1
DE68903674D1 DE8989303134T DE68903674T DE68903674D1 DE 68903674 D1 DE68903674 D1 DE 68903674D1 DE 8989303134 T DE8989303134 T DE 8989303134T DE 68903674 T DE68903674 T DE 68903674T DE 68903674 D1 DE68903674 D1 DE 68903674D1
Authority
DE
Germany
Prior art keywords
production
integrated circuit
pressure sensitive
sensitive integrated
monolithic pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989303134T
Other languages
English (en)
Other versions
DE68903674T2 (de
Inventor
Ronald K Leisure
Donald L Hornback
Paul E Stevenson
Ronald E Brown
Douglas J Yoder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delco Electronics LLC
Original Assignee
Delco Electronics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delco Electronics LLC filed Critical Delco Electronics LLC
Application granted granted Critical
Publication of DE68903674D1 publication Critical patent/DE68903674D1/de
Publication of DE68903674T2 publication Critical patent/DE68903674T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE8989303134T 1988-05-02 1989-03-30 Monolithische druckempfindliche integrierte schaltung und verfahren zu deren herstellung. Expired - Fee Related DE68903674T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/189,446 US4885621A (en) 1988-05-02 1988-05-02 Monolithic pressure sensitive integrated circuit

Publications (2)

Publication Number Publication Date
DE68903674D1 true DE68903674D1 (de) 1993-01-14
DE68903674T2 DE68903674T2 (de) 1993-04-01

Family

ID=22697370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989303134T Expired - Fee Related DE68903674T2 (de) 1988-05-02 1989-03-30 Monolithische druckempfindliche integrierte schaltung und verfahren zu deren herstellung.

Country Status (5)

Country Link
US (1) US4885621A (de)
EP (1) EP0340904B1 (de)
JP (1) JPH01318265A (de)
KR (1) KR920007827B1 (de)
DE (1) DE68903674T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397911A (en) * 1991-04-02 1995-03-14 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor with plural gate electrodes
JP3009239B2 (ja) * 1991-04-02 2000-02-14 本田技研工業株式会社 半導体センサ
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
DE4206174C2 (de) * 1992-02-28 1995-06-22 Bosch Gmbh Robert Integrierter Sensor aus Silizium
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
DE69512544T2 (de) * 1994-03-18 2000-05-25 Foxboro Co Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu
JP3624597B2 (ja) * 1996-12-10 2005-03-02 株式会社デンソー 半導体装置及びその製造方法
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US6142021A (en) * 1998-08-21 2000-11-07 Motorola, Inc. Selectable pressure sensor
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
JP4710147B2 (ja) * 2000-06-13 2011-06-29 株式会社デンソー 半導体圧力センサ
DE10057656C1 (de) * 2000-11-21 2002-04-04 Rossendorf Forschzent Verfahren zur Herstellung von integrierten Abtastnadeln
CN102664161B (zh) * 2012-05-25 2016-11-16 杭州士兰集成电路有限公司 高压bcd工艺中高压器件的隔离结构及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994009A (en) * 1973-02-12 1976-11-23 Honeywell Inc. Stress sensor diaphragms over recessed substrates
US3858150A (en) * 1973-06-21 1974-12-31 Motorola Inc Polycrystalline silicon pressure sensor
US4003127A (en) * 1974-11-25 1977-01-18 General Motors Corporation Polycrystalline silicon pressure transducer
CA1047652A (en) * 1975-07-31 1979-01-30 National Semiconductor Corporation Monolithic integrated circuit transistor having very low collector resistance
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
JPS5583227A (en) * 1978-12-20 1980-06-23 Matsushita Electronics Corp Epitaxial growing
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4456901A (en) * 1981-08-31 1984-06-26 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
JPS60128673A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体感圧装置
JPS6269547A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 半導体装置
JPS62266876A (ja) * 1986-05-14 1987-11-19 Nippon Denso Co Ltd 半導体圧力センサ

Also Published As

Publication number Publication date
DE68903674T2 (de) 1993-04-01
US4885621A (en) 1989-12-05
JPH01318265A (ja) 1989-12-22
EP0340904A3 (de) 1991-02-27
KR920007827B1 (ko) 1992-09-17
EP0340904B1 (de) 1992-12-02
KR900019278A (ko) 1990-12-24
EP0340904A2 (de) 1989-11-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee