DE60333149D1 - Verfahren zur Herstellung von organischen elektrolumineszenten Vorrichtungen - Google Patents
Verfahren zur Herstellung von organischen elektrolumineszenten VorrichtungenInfo
- Publication number
- DE60333149D1 DE60333149D1 DE60333149T DE60333149T DE60333149D1 DE 60333149 D1 DE60333149 D1 DE 60333149D1 DE 60333149 T DE60333149 T DE 60333149T DE 60333149 T DE60333149 T DE 60333149T DE 60333149 D1 DE60333149 D1 DE 60333149D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- organic electroluminescent
- electroluminescent devices
- devices
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002217248 | 2002-07-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60333149D1 true DE60333149D1 (de) | 2010-08-12 |
Family
ID=29997282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60333149T Expired - Lifetime DE60333149D1 (de) | 2002-07-25 | 2003-07-25 | Verfahren zur Herstellung von organischen elektrolumineszenten Vorrichtungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US7037157B2 (de) |
EP (1) | EP1385209B1 (de) |
KR (1) | KR101011980B1 (de) |
CN (1) | CN100377292C (de) |
DE (1) | DE60333149D1 (de) |
SG (1) | SG130013A1 (de) |
TW (1) | TWI322635B (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG130013A1 (en) * | 2002-07-25 | 2007-03-20 | Semiconductor Energy Lab | Method of fabricating light emitting device |
KR100560792B1 (ko) * | 2004-03-23 | 2006-03-13 | 삼성에스디아이 주식회사 | 전면 발광 구조를 갖는 유기 전계 발광 표시 장치 및 이의제조방법 |
US7423373B2 (en) | 2004-03-26 | 2008-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
KR100590260B1 (ko) * | 2004-04-29 | 2006-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006038987A (ja) * | 2004-07-23 | 2006-02-09 | Seiko Epson Corp | 表示装置、表示装置の製造方法、電子機器 |
TWI648719B (zh) | 2004-09-16 | 2019-01-21 | 日商半導體能源研究所股份有限公司 | 具有圖素的顯示裝置和電子裝置 |
KR100699998B1 (ko) | 2004-09-23 | 2007-03-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그의 제조 방법 |
KR100712111B1 (ko) | 2004-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법 |
US8026531B2 (en) | 2005-03-22 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
DE102005027961A1 (de) * | 2005-06-16 | 2007-01-04 | Siemens Ag | Semitransparente Multilayer-Elektrode |
TWI517378B (zh) | 2005-10-17 | 2016-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
EP1830422A3 (de) * | 2006-03-03 | 2012-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung und elektronische Vorrichtung |
KR101150142B1 (ko) * | 2006-04-06 | 2012-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링 |
US20070283618A1 (en) * | 2006-06-09 | 2007-12-13 | Malfer Dennis J | Diesel detergents |
JP5170985B2 (ja) | 2006-06-09 | 2013-03-27 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
KR101322044B1 (ko) * | 2006-11-27 | 2013-10-25 | 엘지디스플레이 주식회사 | 전계 발광 소자 및 그 제조방법 |
US20080254613A1 (en) * | 2007-04-10 | 2008-10-16 | Applied Materials, Inc. | Methods for forming metal interconnect structure for thin film transistor applications |
US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
US20090092935A1 (en) * | 2007-10-05 | 2009-04-09 | The Yankee Candle Company, Inc. | Method for effective degassing of wicks |
US8143093B2 (en) * | 2008-03-20 | 2012-03-27 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
EP2629590A1 (de) * | 2008-06-17 | 2013-08-21 | Hitachi Ltd. | Organische lichtemittierende Vorrichtung |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
KR101431466B1 (ko) * | 2008-07-30 | 2014-08-22 | 삼성디스플레이 주식회사 | 유기 발광 소자의 제조 방법 |
US20100133094A1 (en) * | 2008-12-02 | 2010-06-03 | Applied Materials, Inc. | Transparent conductive film with high transmittance formed by a reactive sputter deposition |
US20100163406A1 (en) * | 2008-12-30 | 2010-07-01 | Applied Materials, Inc. | Substrate support in a reactive sputter chamber |
KR101613865B1 (ko) * | 2009-03-26 | 2016-04-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제작 방법 |
WO2011037829A2 (en) * | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
KR101890565B1 (ko) * | 2011-02-14 | 2018-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 조명 장치 |
CN102690066B (zh) * | 2011-03-22 | 2015-02-25 | 京东方科技集团股份有限公司 | 一种玻璃基板的固定方法 |
KR101924078B1 (ko) * | 2012-03-30 | 2018-12-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 리페어 방법 |
US20150129842A1 (en) * | 2013-11-13 | 2015-05-14 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Method For Manufacturing Organic Electroluminescence Device And Organic Electroluminescence Device Manufactured With Same |
CN103560211B (zh) * | 2013-11-13 | 2017-04-05 | 深圳市华星光电技术有限公司 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
KR102151475B1 (ko) * | 2014-09-04 | 2020-09-04 | 엘지디스플레이 주식회사 | 유기발광표시패널 및 그 제조방법 |
KR102360783B1 (ko) | 2014-09-16 | 2022-02-10 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102284756B1 (ko) | 2014-09-23 | 2021-08-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20170140495A (ko) | 2016-06-10 | 2017-12-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
CN106653764A (zh) * | 2016-10-19 | 2017-05-10 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示面板、显示装置 |
GB2555133B (en) * | 2016-10-20 | 2020-06-10 | Flexenable Ltd | Improving stability of thin film transistors |
CN109728181B (zh) * | 2017-10-30 | 2021-01-08 | 上海和辉光电股份有限公司 | 一种有机发光二极管oled显示器的制备方法 |
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US4891334A (en) * | 1987-11-10 | 1990-01-02 | Nippon Zeon Co., Ltd. | Process for production of electronic devices utilizing novolak resin as protective material |
JP2682188B2 (ja) * | 1990-03-09 | 1997-11-26 | 富士電機株式会社 | 電子写真用感光体の製造方法 |
ATE171560T1 (de) * | 1993-03-09 | 1998-10-15 | Koninkl Philips Electronics Nv | Herstellungsverfahren eines musters von einem elektrisch leitfähigen polymer auf einer substratoberfläche und metallisierung eines solchen musters |
AU7682594A (en) * | 1993-09-08 | 1995-03-27 | Uvtech Systems, Inc. | Surface processing |
US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
JPH0978058A (ja) * | 1995-09-08 | 1997-03-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH09245965A (ja) | 1996-03-06 | 1997-09-19 | Pioneer Electron Corp | 有機エレクトロルミネセンス素子 |
SG77254A1 (en) * | 1997-01-31 | 2000-12-19 | Takasago Thermal Engineering | Air cleaning apparatus air filter and method for manufacturing the same |
KR100509240B1 (ko) * | 1997-02-17 | 2005-08-22 | 세이코 엡슨 가부시키가이샤 | 표시 장치 |
JPH10261484A (ja) * | 1997-03-19 | 1998-09-29 | Minolta Co Ltd | 有機エレクトロルミネセンス素子およびその製造方法 |
JP3704883B2 (ja) * | 1997-05-01 | 2005-10-12 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネセンス素子及びその製造方法 |
JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
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US6187684B1 (en) * | 1999-12-09 | 2001-02-13 | Lam Research Corporation | Methods for cleaning substrate surfaces after etch operations |
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JP2001332741A (ja) * | 2000-05-25 | 2001-11-30 | Sony Corp | 薄膜トランジスタの製造方法 |
US6872604B2 (en) | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
JP2002014421A (ja) * | 2000-06-28 | 2002-01-18 | Seiko Epson Corp | 電気光学装置及びプロジェクタ |
US6739931B2 (en) | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
JP3695308B2 (ja) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
KR100853769B1 (ko) * | 2000-12-29 | 2008-08-25 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
US6893887B2 (en) * | 2001-01-18 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing a light emitting device |
US6720198B2 (en) * | 2001-02-19 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
SG143946A1 (en) * | 2001-02-19 | 2008-07-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US7301279B2 (en) * | 2001-03-19 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and method of manufacturing the same |
SG142160A1 (en) * | 2001-03-19 | 2008-05-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP4152665B2 (ja) * | 2001-07-11 | 2008-09-17 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
US6815723B2 (en) * | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
EP1369499A3 (de) * | 2002-04-15 | 2004-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren und Vorrichtung zur Herstellung eines lichtemittierenden Bauteils |
SG130013A1 (en) * | 2002-07-25 | 2007-03-20 | Semiconductor Energy Lab | Method of fabricating light emitting device |
-
2003
- 2003-07-07 SG SG200304167-0A patent/SG130013A1/en unknown
- 2003-07-16 TW TW092119437A patent/TWI322635B/zh not_active IP Right Cessation
- 2003-07-17 US US10/621,989 patent/US7037157B2/en not_active Expired - Fee Related
- 2003-07-22 KR KR1020030050083A patent/KR101011980B1/ko active IP Right Grant
- 2003-07-25 EP EP03016987A patent/EP1385209B1/de not_active Expired - Lifetime
- 2003-07-25 DE DE60333149T patent/DE60333149D1/de not_active Expired - Lifetime
- 2003-07-25 CN CNB03132892XA patent/CN100377292C/zh not_active Expired - Fee Related
-
2006
- 2006-04-19 US US11/406,775 patent/US7303455B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7037157B2 (en) | 2006-05-02 |
US20040018797A1 (en) | 2004-01-29 |
CN100377292C (zh) | 2008-03-26 |
KR20040010304A (ko) | 2004-01-31 |
US7303455B2 (en) | 2007-12-04 |
EP1385209A3 (de) | 2007-05-23 |
TWI322635B (en) | 2010-03-21 |
CN1476048A (zh) | 2004-02-18 |
KR101011980B1 (ko) | 2011-01-31 |
SG130013A1 (en) | 2007-03-20 |
US20060211325A1 (en) | 2006-09-21 |
TW200404478A (en) | 2004-03-16 |
EP1385209A2 (de) | 2004-01-28 |
EP1385209B1 (de) | 2010-06-30 |
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