DE60306438T2 - Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie - Google Patents

Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie Download PDF

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Publication number
DE60306438T2
DE60306438T2 DE60306438T DE60306438T DE60306438T2 DE 60306438 T2 DE60306438 T2 DE 60306438T2 DE 60306438 T DE60306438 T DE 60306438T DE 60306438 T DE60306438 T DE 60306438T DE 60306438 T2 DE60306438 T2 DE 60306438T2
Authority
DE
Germany
Prior art keywords
structures
pattern
mask
maximum width
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60306438T
Other languages
German (de)
English (en)
Other versions
DE60306438D1 (de
Inventor
Douglas Sunnyvale van den Broeke
Jang Fung Cupertino Chen
Thomas Point Richmond Laidig
Kurt E. Sunnyvale Wampler
Duan-Fu Stephen Freemont Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Publication of DE60306438D1 publication Critical patent/DE60306438D1/de
Application granted granted Critical
Publication of DE60306438T2 publication Critical patent/DE60306438T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60306438T 2002-03-25 2003-03-25 Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie Expired - Fee Related DE60306438T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36654502P 2002-03-25 2002-03-25
US366545P 2002-03-25

Publications (2)

Publication Number Publication Date
DE60306438D1 DE60306438D1 (de) 2006-08-10
DE60306438T2 true DE60306438T2 (de) 2007-01-04

Family

ID=27805318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60306438T Expired - Fee Related DE60306438T2 (de) 2002-03-25 2003-03-25 Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie

Country Status (8)

Country Link
US (2) US6851103B2 (enExample)
EP (1) EP1349002B1 (enExample)
JP (2) JP4102701B2 (enExample)
KR (1) KR100566151B1 (enExample)
CN (1) CN100405221C (enExample)
DE (1) DE60306438T2 (enExample)
SG (2) SG144749A1 (enExample)
TW (1) TWI301229B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06335801A (ja) * 1993-05-24 1994-12-06 Okuma Mach Works Ltd バランス修正機能付数値制御旋盤
JP3025369U (ja) * 1995-11-30 1996-06-11 大宮工業株式会社 不釣合い修正機能付旋盤
KR100566151B1 (ko) * 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치
JP2004133427A (ja) * 2002-07-26 2004-04-30 Asml Masktools Bv ダイポール照明技術とともに用いる配向依存遮蔽
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7234128B2 (en) * 2003-10-03 2007-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the critical dimension uniformity of patterned features on wafers
US6968532B2 (en) * 2003-10-08 2005-11-22 Intel Corporation Multiple exposure technique to pattern tight contact geometries
US7861207B2 (en) * 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
DE102005009805A1 (de) * 2005-03-03 2006-09-14 Infineon Technologies Ag Lithographiemaske und Verfahren zum Erzeugen einer Lithographiemaske
SG126877A1 (en) * 2005-04-12 2006-11-29 Asml Masktools Bv A method, program product and apparatus for performing double exposure lithography
WO2006127538A2 (en) * 2005-05-20 2006-11-30 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
EP2267530A1 (en) * 2006-04-06 2010-12-29 ASML MaskTools B.V. Method and apparatus for performing dark field double dipole lithography
JP4922112B2 (ja) * 2006-09-13 2012-04-25 エーエスエムエル マスクツールズ ビー．ブイ． パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置
US7934177B2 (en) * 2007-02-06 2011-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for a pattern layout split
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US7945869B2 (en) * 2007-08-20 2011-05-17 Infineon Technologies Ag Mask and method for patterning a semiconductor wafer
US7846643B1 (en) 2007-11-02 2010-12-07 Western Digital (Fremont), Llc Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask
JP5355112B2 (ja) * 2009-01-28 2013-11-27 株式会社東芝 パターンレイアウト作成方法
JP5407623B2 (ja) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
JPH05341498A (ja) 1992-04-10 1993-12-24 Toshiba Corp フォトマスク設計装置および設計方法
US5881125A (en) 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
US5446521A (en) * 1993-06-30 1995-08-29 Intel Corporation Phase-shifted opaquing ring
JP2661529B2 (ja) 1993-11-30 1997-10-08 日本電気株式会社 位相シフトマスク
JP2917879B2 (ja) 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
US6228539B1 (en) * 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5923562A (en) * 1996-10-18 1999-07-13 International Business Machines Corporation Method for automatically eliminating three way intersection design conflicts in phase edge, phase shift designs
JPH10198018A (ja) * 1997-01-13 1998-07-31 Mitsubishi Electric Corp 減衰型位相シフトマスクおよびその製造方法
US6114071A (en) 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
US6106979A (en) * 1997-12-30 2000-08-22 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6077630A (en) * 1998-01-08 2000-06-20 Micron Technology, Inc. Subresolution grating for attenuated phase shifting mask fabrication
KR100585466B1 (ko) 1998-03-17 2006-06-02 에이에스엠엘 마스크툴즈 비.브이. 고 투과성 “감쇠” 위상 시프트 마스크를 갖는서브-0.25λ 라인 피쳐를 패터닝하는 방법
JP3185754B2 (ja) * 1998-05-29 2001-07-11 日本電気株式会社 露光原版の作製方法
KR100400294B1 (ko) * 1998-12-30 2003-12-24 주식회사 하이닉스반도체 노광마스크
JP4442962B2 (ja) * 1999-10-19 2010-03-31 株式会社ルネサステクノロジ フォトマスクの製造方法
JP2001183806A (ja) 1999-12-24 2001-07-06 Nec Corp 露光方法および位相シフトマスク
DE10001119A1 (de) * 2000-01-13 2001-07-26 Infineon Technologies Ag Phasenmaske
JP2001222097A (ja) * 2000-02-09 2001-08-17 Fujitsu Ltd 位相シフトマスク及びその製造方法
JP2001319871A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光方法、濃度フィルタの製造方法、及び露光装置
US6544694B2 (en) * 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
JP2001296646A (ja) * 2000-04-17 2001-10-26 Fujitsu Ltd フォトマスク、フォトマスクの製造方法、露光方法及び露光装置
JP3749083B2 (ja) * 2000-04-25 2006-02-22 株式会社ルネサステクノロジ 電子装置の製造方法
US6335130B1 (en) 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
US6338922B1 (en) * 2000-05-08 2002-01-15 International Business Machines Corporation Optimized alternating phase shifted mask design
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6815129B1 (en) * 2000-09-26 2004-11-09 Euv Llc Compensation of flare-induced CD changes EUVL
US6901575B2 (en) * 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
US6500587B1 (en) * 2001-02-02 2002-12-31 Advanced Micro Devices, Inc. Binary and attenuating phase-shifting masks for multiple wavelengths
US6553562B2 (en) 2001-05-04 2003-04-22 Asml Masktools B.V. Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques
US6571380B2 (en) * 2001-07-12 2003-05-27 Micron Technology, Inc. Integrated circuit with layout matched high speed lines
US6605396B2 (en) * 2001-08-06 2003-08-12 Infineon Technologies, Ag Resolution enhancement for alternating phase shift masks
US6548417B2 (en) * 2001-09-19 2003-04-15 Intel Corporation In-situ balancing for phase-shifting mask
US6757886B2 (en) * 2001-11-13 2004-06-29 International Business Machines Corporation Alternating phase shift mask design with optimized phase shapes
EP1408373A4 (en) * 2001-12-26 2012-01-25 Panasonic Corp PHOTOMASK, METHOD FOR THE PRODUCTION THEREOF AND STRUCTURAL EDUCATION PROCESS WITH THE PHOTOMASK
US6625802B2 (en) 2002-02-01 2003-09-23 Intel Corporation Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
KR100566151B1 (ko) * 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치
US6894864B2 (en) 2002-07-26 2005-05-17 Wistron Corp. Portable information storage device

Also Published As

Publication number Publication date
KR20030077447A (ko) 2003-10-01
JP2007323091A (ja) 2007-12-13
TWI301229B (en) 2008-09-21
US20040010770A1 (en) 2004-01-15
TW200307190A (en) 2003-12-01
US6851103B2 (en) 2005-02-01
KR100566151B1 (ko) 2006-03-31
EP1349002A3 (en) 2004-03-17
CN100405221C (zh) 2008-07-23
DE60306438D1 (de) 2006-08-10
JP4102701B2 (ja) 2008-06-18
EP1349002A2 (en) 2003-10-01
US7549140B2 (en) 2009-06-16
US20050125765A1 (en) 2005-06-09
SG125911A1 (en) 2006-10-30
CN1450403A (zh) 2003-10-22
SG144749A1 (en) 2008-08-28
JP4558770B2 (ja) 2010-10-06
EP1349002B1 (en) 2006-06-28
JP2003295413A (ja) 2003-10-15

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