SG144749A1 - Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography - Google Patents

Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography

Info

Publication number
SG144749A1
SG144749A1 SG200608891-8A SG2006088918A SG144749A1 SG 144749 A1 SG144749 A1 SG 144749A1 SG 2006088918 A SG2006088918 A SG 2006088918A SG 144749 A1 SG144749 A1 SG 144749A1
Authority
SG
Singapore
Prior art keywords
phase
mask pattern
semiconductor device
device patterns
lithography
Prior art date
Application number
SG200608891-8A
Other languages
English (en)
Inventor
Den Broeke Douglas Van
Jang Fung Chen
Thomas Laidig
Kurt E Wampler
Duan-Fu Stephen Hsu
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG144749A1 publication Critical patent/SG144749A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200608891-8A 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography SG144749A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36654502P 2002-03-25 2002-03-25

Publications (1)

Publication Number Publication Date
SG144749A1 true SG144749A1 (en) 2008-08-28

Family

ID=27805318

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200608891-8A SG144749A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
SG200301491A SG125911A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200301491A SG125911A1 (en) 2002-03-25 2003-03-25 Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography

Country Status (8)

Country Link
US (2) US6851103B2 (enExample)
EP (1) EP1349002B1 (enExample)
JP (2) JP4102701B2 (enExample)
KR (1) KR100566151B1 (enExample)
CN (1) CN100405221C (enExample)
DE (1) DE60306438T2 (enExample)
SG (2) SG144749A1 (enExample)
TW (1) TWI301229B (enExample)

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JPH06335801A (ja) * 1993-05-24 1994-12-06 Okuma Mach Works Ltd バランス修正機能付数値制御旋盤
JP3025369U (ja) * 1995-11-30 1996-06-11 大宮工業株式会社 不釣合い修正機能付旋盤
KR100566151B1 (ko) * 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치
JP2004133427A (ja) * 2002-07-26 2004-04-30 Asml Masktools Bv ダイポール照明技術とともに用いる配向依存遮蔽
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7234128B2 (en) * 2003-10-03 2007-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the critical dimension uniformity of patterned features on wafers
US6968532B2 (en) * 2003-10-08 2005-11-22 Intel Corporation Multiple exposure technique to pattern tight contact geometries
US7861207B2 (en) * 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
DE102005009805A1 (de) * 2005-03-03 2006-09-14 Infineon Technologies Ag Lithographiemaske und Verfahren zum Erzeugen einer Lithographiemaske
SG126877A1 (en) * 2005-04-12 2006-11-29 Asml Masktools Bv A method, program product and apparatus for performing double exposure lithography
WO2006127538A2 (en) * 2005-05-20 2006-11-30 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
EP2267530A1 (en) * 2006-04-06 2010-12-29 ASML MaskTools B.V. Method and apparatus for performing dark field double dipole lithography
JP4922112B2 (ja) * 2006-09-13 2012-04-25 エーエスエムエル マスクツールズ ビー．ブイ． パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置
US7934177B2 (en) * 2007-02-06 2011-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for a pattern layout split
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US7945869B2 (en) * 2007-08-20 2011-05-17 Infineon Technologies Ag Mask and method for patterning a semiconductor wafer
US7846643B1 (en) 2007-11-02 2010-12-07 Western Digital (Fremont), Llc Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask
JP5355112B2 (ja) * 2009-01-28 2013-11-27 株式会社東芝 パターンレイアウト作成方法
JP5407623B2 (ja) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法

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US5881125A (en) * 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
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US6268091B1 (en) * 1998-01-08 2001-07-31 Micron Subresolution grating for attenuated phase shifting mask fabrication
JP2001222097A (ja) * 2000-02-09 2001-08-17 Fujitsu Ltd 位相シフトマスク及びその製造方法

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US5881125A (en) * 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
US5446521A (en) * 1993-06-30 1995-08-29 Intel Corporation Phase-shifted opaquing ring
US6255024B1 (en) * 1997-12-30 2001-07-03 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6268091B1 (en) * 1998-01-08 2001-07-31 Micron Subresolution grating for attenuated phase shifting mask fabrication
JP2001222097A (ja) * 2000-02-09 2001-08-17 Fujitsu Ltd 位相シフトマスク及びその製造方法

Also Published As

Publication number Publication date
KR20030077447A (ko) 2003-10-01
JP2007323091A (ja) 2007-12-13
TWI301229B (en) 2008-09-21
US20040010770A1 (en) 2004-01-15
TW200307190A (en) 2003-12-01
US6851103B2 (en) 2005-02-01
KR100566151B1 (ko) 2006-03-31
EP1349002A3 (en) 2004-03-17
CN100405221C (zh) 2008-07-23
DE60306438D1 (de) 2006-08-10
JP4102701B2 (ja) 2008-06-18
DE60306438T2 (de) 2007-01-04
EP1349002A2 (en) 2003-10-01
US7549140B2 (en) 2009-06-16
US20050125765A1 (en) 2005-06-09
SG125911A1 (en) 2006-10-30
CN1450403A (zh) 2003-10-22
JP4558770B2 (ja) 2010-10-06
EP1349002B1 (en) 2006-06-28
JP2003295413A (ja) 2003-10-15

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