DE60306438D1 - Verfahren und Apparat zur Zerlegung von Halbleitermustern in Phasen- und Chromregionen für chromfreie Phasenlithographie - Google Patents

Verfahren und Apparat zur Zerlegung von Halbleitermustern in Phasen- und Chromregionen für chromfreie Phasenlithographie

Info

Publication number
DE60306438D1
DE60306438D1 DE60306438T DE60306438T DE60306438D1 DE 60306438 D1 DE60306438 D1 DE 60306438D1 DE 60306438 T DE60306438 T DE 60306438T DE 60306438 T DE60306438 T DE 60306438T DE 60306438 D1 DE60306438 D1 DE 60306438D1
Authority
DE
Germany
Prior art keywords
phase
chromium
semiconductor patterns
lithography
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60306438T
Other languages
English (en)
Other versions
DE60306438T2 (de
Inventor
Den Broeke Douglas Van
Jang Fung Chen
Thomas Laidig
Kurt E Wampler
Duan-Fu Stephen Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Application granted granted Critical
Publication of DE60306438D1 publication Critical patent/DE60306438D1/de
Publication of DE60306438T2 publication Critical patent/DE60306438T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60306438T 2002-03-25 2003-03-25 Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie Expired - Fee Related DE60306438T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36654502P 2002-03-25 2002-03-25
US366545P 2002-03-25

Publications (2)

Publication Number Publication Date
DE60306438D1 true DE60306438D1 (de) 2006-08-10
DE60306438T2 DE60306438T2 (de) 2007-01-04

Family

ID=27805318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60306438T Expired - Fee Related DE60306438T2 (de) 2002-03-25 2003-03-25 Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie

Country Status (8)

Country Link
US (2) US6851103B2 (de)
EP (1) EP1349002B1 (de)
JP (2) JP4102701B2 (de)
KR (1) KR100566151B1 (de)
CN (1) CN100405221C (de)
DE (1) DE60306438T2 (de)
SG (2) SG144749A1 (de)
TW (1) TWI301229B (de)

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US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
DE102005009805A1 (de) * 2005-03-03 2006-09-14 Infineon Technologies Ag Lithographiemaske und Verfahren zum Erzeugen einer Lithographiemaske
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US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
EP1843202B1 (de) * 2006-04-06 2015-02-18 ASML Netherlands B.V. Verfahren zur Durchführung von Dunkelfeld-Doppeldipollithografie
JP4922112B2 (ja) * 2006-09-13 2012-04-25 エーエスエムエル マスクツールズ ビー．ブイ． パターン分解フィーチャのためのモデルベースｏｐｃを行うための方法および装置
US7934177B2 (en) * 2007-02-06 2011-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for a pattern layout split
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
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JP5355112B2 (ja) * 2009-01-28 2013-11-27 株式会社東芝 パターンレイアウト作成方法
JP5407623B2 (ja) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置
WO2013122220A1 (ja) * 2012-02-15 2013-08-22 大日本印刷株式会社 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法

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Also Published As

Publication number Publication date
SG125911A1 (en) 2006-10-30
US7549140B2 (en) 2009-06-16
JP2007323091A (ja) 2007-12-13
EP1349002A3 (de) 2004-03-17
EP1349002A2 (de) 2003-10-01
DE60306438T2 (de) 2007-01-04
US20050125765A1 (en) 2005-06-09
TW200307190A (en) 2003-12-01
KR20030077447A (ko) 2003-10-01
CN100405221C (zh) 2008-07-23
SG144749A1 (en) 2008-08-28
JP2003295413A (ja) 2003-10-15
US20040010770A1 (en) 2004-01-15
JP4102701B2 (ja) 2008-06-18
KR100566151B1 (ko) 2006-03-31
EP1349002B1 (de) 2006-06-28
US6851103B2 (en) 2005-02-01
CN1450403A (zh) 2003-10-22
JP4558770B2 (ja) 2010-10-06
TWI301229B (en) 2008-09-21

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