DE60208639D1 - Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung - Google Patents

Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung

Info

Publication number
DE60208639D1
DE60208639D1 DE60208639T DE60208639T DE60208639D1 DE 60208639 D1 DE60208639 D1 DE 60208639D1 DE 60208639 T DE60208639 T DE 60208639T DE 60208639 T DE60208639 T DE 60208639T DE 60208639 D1 DE60208639 D1 DE 60208639D1
Authority
DE
Germany
Prior art keywords
making masks
dipole exposure
dipole
masks
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60208639T
Other languages
English (en)
Other versions
DE60208639T2 (de
Inventor
Luigi Capodieci
Robles Juan Andres Torres
Os Lodewijk Hubertus Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
ASML Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV, ASML Netherlands BV filed Critical ASML MaskTools Netherlands BV
Publication of DE60208639D1 publication Critical patent/DE60208639D1/de
Application granted granted Critical
Publication of DE60208639T2 publication Critical patent/DE60208639T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60208639T 2001-11-05 2002-11-04 Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung Expired - Lifetime DE60208639T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US985621 2001-11-05
US09/985,621 US6553562B2 (en) 2001-05-04 2001-11-05 Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques

Publications (2)

Publication Number Publication Date
DE60208639D1 true DE60208639D1 (de) 2006-04-06
DE60208639T2 DE60208639T2 (de) 2006-07-13

Family

ID=25531646

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60208639T Expired - Lifetime DE60208639T2 (de) 2001-11-05 2002-11-04 Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung

Country Status (5)

Country Link
US (1) US6553562B2 (de)
EP (1) EP1308780B1 (de)
JP (1) JP3645242B2 (de)
KR (1) KR100585478B1 (de)
DE (1) DE60208639T2 (de)

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Also Published As

Publication number Publication date
KR100585478B1 (ko) 2006-06-02
JP3645242B2 (ja) 2005-05-11
EP1308780A3 (de) 2004-01-14
US6553562B2 (en) 2003-04-22
EP1308780A2 (de) 2003-05-07
KR20030038419A (ko) 2003-05-16
JP2003162042A (ja) 2003-06-06
EP1308780B1 (de) 2006-01-11
US20020166107A1 (en) 2002-11-07
DE60208639T2 (de) 2006-07-13

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