CN100405221C - 用于无铬相位光刻技术中将半导体器件图案分解为相位和镀铬区域的方法和装置 - Google Patents

用于无铬相位光刻技术中将半导体器件图案分解为相位和镀铬区域的方法和装置 Download PDF

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Publication number
CN100405221C
CN100405221C CNB031286399A CN03128639A CN100405221C CN 100405221 C CN100405221 C CN 100405221C CN B031286399 A CNB031286399 A CN B031286399A CN 03128639 A CN03128639 A CN 03128639A CN 100405221 C CN100405221 C CN 100405221C
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China
Prior art keywords
mask
features
pattern
maximum width
width
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Expired - Lifetime
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Chinese (zh)
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CN1450403A (zh
Inventor
D·范登布雷克
J·F·陈
T·莱迪
K·E·瓦姆普勒
D·-F·S·苏
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ASML Holding NV
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ASML FRISKET TOOLS BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB031286399A 2002-03-25 2003-03-25 用于无铬相位光刻技术中将半导体器件图案分解为相位和镀铬区域的方法和装置 Expired - Lifetime CN100405221C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36654502P 2002-03-25 2002-03-25
US60/366545 2002-03-25

Publications (2)

Publication Number Publication Date
CN1450403A CN1450403A (zh) 2003-10-22
CN100405221C true CN100405221C (zh) 2008-07-23

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CNB031286399A Expired - Lifetime CN100405221C (zh) 2002-03-25 2003-03-25 用于无铬相位光刻技术中将半导体器件图案分解为相位和镀铬区域的方法和装置

Country Status (8)

Country Link
US (2) US6851103B2 (enExample)
EP (1) EP1349002B1 (enExample)
JP (2) JP4102701B2 (enExample)
KR (1) KR100566151B1 (enExample)
CN (1) CN100405221C (enExample)
DE (1) DE60306438T2 (enExample)
SG (2) SG144749A1 (enExample)
TW (1) TWI301229B (enExample)

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JP2004133427A (ja) * 2002-07-26 2004-04-30 Asml Masktools Bv ダイポール照明技術とともに用いる配向依存遮蔽
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US7234128B2 (en) * 2003-10-03 2007-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the critical dimension uniformity of patterned features on wafers
US6968532B2 (en) * 2003-10-08 2005-11-22 Intel Corporation Multiple exposure technique to pattern tight contact geometries
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US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
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US7395516B2 (en) 2005-05-20 2008-07-01 Cadence Design Systems, Inc. Manufacturing aware design and design aware manufacturing
US7732102B2 (en) * 2005-07-14 2010-06-08 Freescale Semiconductor, Inc. Cr-capped chromeless phase lithography
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JP5407623B2 (ja) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 マスクパターン評価方法、マスクパターン補正方法及びマスクパターン発生装置
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法

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Also Published As

Publication number Publication date
KR20030077447A (ko) 2003-10-01
JP2007323091A (ja) 2007-12-13
TWI301229B (en) 2008-09-21
US20040010770A1 (en) 2004-01-15
TW200307190A (en) 2003-12-01
US6851103B2 (en) 2005-02-01
KR100566151B1 (ko) 2006-03-31
EP1349002A3 (en) 2004-03-17
DE60306438D1 (de) 2006-08-10
JP4102701B2 (ja) 2008-06-18
DE60306438T2 (de) 2007-01-04
EP1349002A2 (en) 2003-10-01
US7549140B2 (en) 2009-06-16
US20050125765A1 (en) 2005-06-09
SG125911A1 (en) 2006-10-30
CN1450403A (zh) 2003-10-22
SG144749A1 (en) 2008-08-28
JP4558770B2 (ja) 2010-10-06
EP1349002B1 (en) 2006-06-28
JP2003295413A (ja) 2003-10-15

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Granted publication date: 20080723