DE60217359D1 - Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren - Google Patents

Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren

Info

Publication number
DE60217359D1
DE60217359D1 DE60217359T DE60217359T DE60217359D1 DE 60217359 D1 DE60217359 D1 DE 60217359D1 DE 60217359 T DE60217359 T DE 60217359T DE 60217359 T DE60217359 T DE 60217359T DE 60217359 D1 DE60217359 D1 DE 60217359D1
Authority
DE
Germany
Prior art keywords
porous silicon
membranes
fabrication
gas sensors
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217359T
Other languages
English (en)
Inventor
Christos Tsamis
Angeliki Tserepi
Androula G Nassiopoulou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCSR DEMOKRITOS AGHIA PARASKEV
Original Assignee
NCSR DEMOKRITOS AGHIA PARASKEV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCSR DEMOKRITOS AGHIA PARASKEV filed Critical NCSR DEMOKRITOS AGHIA PARASKEV
Application granted granted Critical
Publication of DE60217359D1 publication Critical patent/DE60217359D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00682—Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0069—Thermal properties, e.g. improve thermal insulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/18—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Ceramic Products (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE60217359T 2001-07-31 2002-02-18 Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren Expired - Lifetime DE60217359D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GR20010100378A GR1004040B (el) 2001-07-31 2001-07-31 Μεθοδος για την κατασκευη αιωρουμενων μεμβρανων πορωδους πυριτιου και εφαρμογης της σε αισθητηρες αεριων
PCT/GR2002/000008 WO2003011747A1 (en) 2001-07-31 2002-02-18 Method for the fabrication of suspended porous silicon microstructures and application in gas sensors

Publications (1)

Publication Number Publication Date
DE60217359D1 true DE60217359D1 (de) 2007-02-15

Family

ID=10944796

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217359T Expired - Lifetime DE60217359D1 (de) 2001-07-31 2002-02-18 Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren

Country Status (8)

Country Link
US (1) US20040195096A1 (de)
EP (1) EP1417151B9 (de)
JP (1) JP2005502480A (de)
CN (1) CN1538934A (de)
AT (1) ATE350333T1 (de)
DE (1) DE60217359D1 (de)
GR (1) GR1004040B (de)
WO (1) WO2003011747A1 (de)

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US20080044939A1 (en) * 2002-01-24 2008-02-21 Nassiopoulou Androula G Low power silicon thermal sensors and microfluidic devices based on the use of porous sealed air cavity technology or microchannel technology
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CN101932146B (zh) * 2010-09-10 2012-10-17 中国科学院上海微系统与信息技术研究所 具有圆弧形凹槽加热膜区的三维微型加热器及制作方法
CN102175287A (zh) * 2010-12-30 2011-09-07 国家纳米技术与工程研究院 一种基于mems技术的流量计芯片的测量部件及其制作方法
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RU2661611C1 (ru) * 2017-12-06 2018-07-17 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ создания сенсорного элемента на основе микрорезонатора из пористого кремния для детекции паров взрывчатых веществ
CN112074729B (zh) * 2018-01-05 2024-05-07 汉席克卡德应用研究协会 气体传感器以及用于运行气体传感器的方法
KR102558160B1 (ko) 2018-01-05 2023-07-21 한-식카드-게셀쉐프트 퓨어 안게반테 포슝 이.브이. 열 가스 센서에 대한 평가 배열, 방법들 및 컴퓨터 프로그램들
CN108318547B (zh) * 2018-05-11 2024-01-23 微纳感知(合肥)技术有限公司 一种具有卷曲结构的单悬梁式气体传感器及传感器阵列
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CN109211342B (zh) * 2018-09-05 2020-03-20 四方光电股份有限公司 一种气流流量计、mems硅基温敏芯片及其制备方法
CN110963458B (zh) * 2018-09-30 2023-09-15 上海新微技术研发中心有限公司 一种在基板中形成微细结构的方法及微细结构
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CN110182754B (zh) * 2019-05-17 2021-10-29 中国科学院上海微系统与信息技术研究所 一种具有微纳结构增强的微加热器及其制备方法
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DE69601930T2 (de) * 1996-07-19 1999-10-07 Fraunhofer Ges Forschung Katalytisches Gassensorelement
GR1003010B (el) * 1997-05-07 1998-11-20 "����������" Ολοκληρωμενος αισθητηρας ροης αεριων χρησιμοποιωντας τεχνολογια πορωδους πυριτιου
JP2003532876A (ja) * 2000-05-08 2003-11-05 アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ マイクロフィジオメーター
DE10030352A1 (de) * 2000-06-21 2002-01-10 Bosch Gmbh Robert Mikromechanisches Bauelement, insbesondere Sensorelement, mit einer stabilisierten Membran und Verfahren zur Herstellung eines derartigen Bauelements

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ATE350333T1 (de) 2007-01-15
EP1417151B9 (de) 2007-08-08
EP1417151B1 (de) 2007-01-03
GR1004040B (el) 2002-10-31
CN1538934A (zh) 2004-10-20
EP1417151A1 (de) 2004-05-12
JP2005502480A (ja) 2005-01-27
WO2003011747A1 (en) 2003-02-13
US20040195096A1 (en) 2004-10-07

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