ATE447538T1 - Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen - Google Patents

Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen

Info

Publication number
ATE447538T1
ATE447538T1 AT01993334T AT01993334T ATE447538T1 AT E447538 T1 ATE447538 T1 AT E447538T1 AT 01993334 T AT01993334 T AT 01993334T AT 01993334 T AT01993334 T AT 01993334T AT E447538 T1 ATE447538 T1 AT E447538T1
Authority
AT
Austria
Prior art keywords
layer
silicon
soi
wafer
recesses
Prior art date
Application number
AT01993334T
Other languages
English (en)
Inventor
Cleopatra Cabuz
Jeffrey Ridley
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE447538T1 publication Critical patent/ATE447538T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Glass Compositions (AREA)
AT01993334T 2000-12-27 2001-12-20 Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen ATE447538T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/748,488 US6582985B2 (en) 2000-12-27 2000-12-27 SOI/glass process for forming thin silicon micromachined structures
PCT/US2001/050089 WO2002057180A2 (en) 2000-12-27 2001-12-20 Soi/glass process for forming thin silicon micromachined structures

Publications (1)

Publication Number Publication Date
ATE447538T1 true ATE447538T1 (de) 2009-11-15

Family

ID=25009658

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01993334T ATE447538T1 (de) 2000-12-27 2001-12-20 Soi/glas-verfahren zur herstellung von dünnen mikrobearbeiteten strukturen

Country Status (6)

Country Link
US (1) US6582985B2 (de)
EP (1) EP1345844B1 (de)
AT (1) ATE447538T1 (de)
DE (1) DE60140379D1 (de)
TW (1) TW521060B (de)
WO (1) WO2002057180A2 (de)

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US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US7067909B2 (en) * 2002-12-31 2006-06-27 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
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US7005732B2 (en) * 2003-10-21 2006-02-28 Honeywell International Inc. Methods and systems for providing MEMS devices with a top cap and upper sense plate
US7012322B2 (en) * 2003-12-22 2006-03-14 Honeywell International Inc. Method for reducing harmonic distortion in comb drive devices
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
US7036373B2 (en) 2004-06-29 2006-05-02 Honeywell International, Inc. MEMS gyroscope with horizontally oriented drive electrodes
US20060118210A1 (en) * 2004-10-04 2006-06-08 Johnson A D Portable energy storage devices and methods
US7258010B2 (en) * 2005-03-09 2007-08-21 Honeywell International Inc. MEMS device with thinned comb fingers
US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US7527997B2 (en) * 2005-04-08 2009-05-05 The Research Foundation Of State University Of New York MEMS structure with anodically bonded silicon-on-insulator substrate
US7469588B2 (en) * 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
US20080075557A1 (en) * 2006-09-22 2008-03-27 Johnson A David Constant load bolt
US20080213062A1 (en) * 2006-09-22 2008-09-04 Tini Alloy Company Constant load fastener
WO2008133738A2 (en) 2006-12-01 2008-11-06 Tini Alloy Company Method of alloying reactive components
US8584767B2 (en) 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
US8684101B2 (en) 2007-01-25 2014-04-01 Tini Alloy Company Frangible shape memory alloy fire sprinkler valve actuator
JP4455618B2 (ja) * 2007-06-26 2010-04-21 株式会社東芝 半導体装置の製造方法
US7690254B2 (en) * 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
US8007674B2 (en) 2007-07-30 2011-08-30 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
US8556969B2 (en) 2007-11-30 2013-10-15 Ormco Corporation Biocompatible copper-based single-crystal shape memory alloys
US8382917B2 (en) 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
US7842143B2 (en) * 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
CN101447369B (zh) * 2008-12-25 2011-11-09 北京大学 一种基于金属钛的mems机械继电器的制备方法
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator
US11040230B2 (en) 2012-08-31 2021-06-22 Tini Alloy Company Fire sprinkler valve actuator
KR101942967B1 (ko) * 2012-12-12 2019-01-28 삼성전자주식회사 실록산계 단량체를 이용한 접합 기판 구조체 및 그 제조방법
US9837935B2 (en) * 2013-10-29 2017-12-05 Honeywell International Inc. All-silicon electrode capacitive transducer on a glass substrate
CN105645347B (zh) * 2014-11-18 2017-08-08 无锡华润上华半导体有限公司 体硅微加工工艺的定位方法
US9818637B2 (en) 2015-12-29 2017-11-14 Globalfoundries Inc. Device layer transfer with a preserved handle wafer section
US11056382B2 (en) * 2018-03-19 2021-07-06 Globalfoundries U.S. Inc. Cavity formation within and under semiconductor devices

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Also Published As

Publication number Publication date
WO2002057180A2 (en) 2002-07-25
TW521060B (en) 2003-02-21
DE60140379D1 (de) 2009-12-17
US6582985B2 (en) 2003-06-24
WO2002057180A3 (en) 2003-03-13
EP1345844B1 (de) 2009-11-04
US20020081821A1 (en) 2002-06-27
EP1345844A2 (de) 2003-09-24

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