WO2004097907A3 - Verfahren zur herstellung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mikroporenätzung - Google Patents

Verfahren zur herstellung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mikroporenätzung Download PDF

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Publication number
WO2004097907A3
WO2004097907A3 PCT/DE2004/000865 DE2004000865W WO2004097907A3 WO 2004097907 A3 WO2004097907 A3 WO 2004097907A3 DE 2004000865 W DE2004000865 W DE 2004000865W WO 2004097907 A3 WO2004097907 A3 WO 2004097907A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
permeable membranes
semiconductor materials
macro
micro
Prior art date
Application number
PCT/DE2004/000865
Other languages
English (en)
French (fr)
Other versions
WO2004097907A2 (de
Inventor
Helmut Foell
Juergen Carstensen
Marc Christophersen
Original Assignee
Univ Kiel Christian Albrechts
Helmut Foell
Juergen Carstensen
Marc Christophersen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10318995A external-priority patent/DE10318995B4/de
Application filed by Univ Kiel Christian Albrechts, Helmut Foell, Juergen Carstensen, Marc Christophersen filed Critical Univ Kiel Christian Albrechts
Publication of WO2004097907A2 publication Critical patent/WO2004097907A2/de
Publication of WO2004097907A3 publication Critical patent/WO2004097907A3/de

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/0213—Silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/006—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

Verfahren zur Herstellung von durchgängigen Membranen aus Halbleitermaterialien unter elektrochemischer Ätzung von Makroporen an einer Flachseite eines im wesentlichen flächigen Halbleiters, mit den Schritten Ätzen von der den Makroporen gegenüberliegenden Flachseite des Halbleiters unter Ausbildung von Mikroporen, die von ihrer Natur her nicht in die Makroporen eindringen, und Entfernen der mit Mikroporen durchdrungenen Opferschicht unter Freilegung der Enden der Makroporen.
PCT/DE2004/000865 2003-04-25 2004-04-23 Verfahren zur herstellung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mikroporenätzung WO2004097907A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10318995.5 2003-04-25
DE10318995A DE10318995B4 (de) 2003-04-25 2003-04-25 Verfahren zur Herstellung von durchgängigen Membranen

Publications (2)

Publication Number Publication Date
WO2004097907A2 WO2004097907A2 (de) 2004-11-11
WO2004097907A3 true WO2004097907A3 (de) 2005-01-27

Family

ID=33393912

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/DE2004/000865 WO2004097907A2 (de) 2003-04-25 2004-04-23 Verfahren zur herstellung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mikroporenätzung
PCT/DE2004/000864 WO2004097077A2 (de) 2003-04-25 2004-04-23 Verfahren zur ätzung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mesoporenätzung

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/000864 WO2004097077A2 (de) 2003-04-25 2004-04-23 Verfahren zur ätzung von durchgängigen membranen aus halbleitermaterialien unter nutzung von makro- und mesoporenätzung

Country Status (2)

Country Link
DE (1) DE10362083B4 (de)
WO (2) WO2004097907A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007035295A1 (en) 2005-09-16 2007-03-29 University Of Cincinnati Silicon mems based two-phase heat transfer device
US8188595B2 (en) 2008-08-13 2012-05-29 Progressive Cooling Solutions, Inc. Two-phase cooling for light-emitting devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4687551A (en) * 1984-10-17 1987-08-18 Alcan International Limited Porous films and method of forming them
WO1999058746A1 (de) * 1998-05-08 1999-11-18 Infineon Technologies Ag Perforiertes silizium-membran hergestellt mittels eines elektrochemischen ätverfahrens
DE10014723A1 (de) * 2000-03-24 2001-09-27 Juergen Carstensen Herstellung dreidimensionaler photonischer Kristalle mit Porenätzungsverfahren in Silizium

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4687551A (en) * 1984-10-17 1987-08-18 Alcan International Limited Porous films and method of forming them
WO1999058746A1 (de) * 1998-05-08 1999-11-18 Infineon Technologies Ag Perforiertes silizium-membran hergestellt mittels eines elektrochemischen ätverfahrens
DE10014723A1 (de) * 2000-03-24 2001-09-27 Juergen Carstensen Herstellung dreidimensionaler photonischer Kristalle mit Porenätzungsverfahren in Silizium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LANG W: "Silicon microstructuring technology", 1 September 1996, MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, PAGE(S) 1-55, ISSN: 0927-796X, XP004013096 *

Also Published As

Publication number Publication date
WO2004097077A3 (de) 2005-01-27
DE10362083B4 (de) 2007-05-03
WO2004097907A2 (de) 2004-11-11
WO2004097077A2 (de) 2004-11-11

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