DE60217067D1 - Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird - Google Patents

Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird

Info

Publication number
DE60217067D1
DE60217067D1 DE60217067T DE60217067T DE60217067D1 DE 60217067 D1 DE60217067 D1 DE 60217067D1 DE 60217067 T DE60217067 T DE 60217067T DE 60217067 T DE60217067 T DE 60217067T DE 60217067 D1 DE60217067 D1 DE 60217067D1
Authority
DE
Germany
Prior art keywords
knives
accelerating
protected
production method
wafer scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60217067T
Other languages
English (en)
Inventor
Kia Silverbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silverbrook Research Pty Ltd
Original Assignee
Silverbrook Research Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Research Pty Ltd filed Critical Silverbrook Research Pty Ltd
Application granted granted Critical
Publication of DE60217067D1 publication Critical patent/DE60217067D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00904—Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0822—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using IR radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/50—Removing moulded articles
    • B29C2043/503—Removing moulded articles using ejector pins, rods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/0022—Multi-cavity moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/05—Arrays
    • B81B2207/056—Arrays of static structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/034—Moulding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Prostheses (AREA)
DE60217067T 2001-01-10 2002-01-08 Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird Expired - Fee Related DE60217067D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPR2453A AUPR245301A0 (en) 2001-01-10 2001-01-10 An apparatus (WSM06)
PCT/AU2002/000013 WO2002056031A1 (en) 2001-01-10 2002-01-08 Accelerometer protected by caps applied at the wafer scale

Publications (1)

Publication Number Publication Date
DE60217067D1 true DE60217067D1 (de) 2007-02-08

Family

ID=3826488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217067T Expired - Fee Related DE60217067D1 (de) 2001-01-10 2002-01-08 Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird

Country Status (7)

Country Link
US (4) US6777259B2 (de)
EP (1) EP1358489B1 (de)
JP (1) JP2004525357A (de)
AT (2) ATE349704T1 (de)
AU (1) AUPR245301A0 (de)
DE (1) DE60217067D1 (de)
WO (1) WO2002056031A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60239137D1 (de) * 2001-09-06 2011-03-24 Ricoh Co Ltd Herstellungsverfahren für flüssigkeitstropfenabgabekopf
US6989122B1 (en) * 2002-10-17 2006-01-24 National Semiconductor Corporation Techniques for manufacturing flash-free contacts on a semiconductor package
FR2849014B1 (fr) * 2002-12-20 2005-06-10 Commissariat Energie Atomique Microstruture encapsulee et procede de fabrication d'une telle microstructure
JP2005172543A (ja) * 2003-12-10 2005-06-30 Mitsubishi Electric Corp 加速度センサおよび加速度センサの製造方法
CN101094804B (zh) * 2004-03-15 2011-12-28 佐治亚技术研究公司 微机电系统封装件及其制造方法
DE102004029586A1 (de) * 2004-06-18 2006-01-12 Infineon Technologies Ag Substratbasiertes Gehäusesbauelement mit einem Halbleiter-Chip
JP2006071432A (ja) * 2004-09-01 2006-03-16 Oki Electric Ind Co Ltd 加速度センサチップパッケージ及びその製造方法
US7337671B2 (en) 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
JP2007048994A (ja) * 2005-08-11 2007-02-22 Akita Denshi Systems:Kk 半導体装置及びその製造方法
WO2007020701A1 (ja) * 2005-08-18 2007-02-22 C & N Inc 加速度センサ装置
JP4984486B2 (ja) * 2005-10-20 2012-07-25 株式会社デンソー センサの製造方法
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7767484B2 (en) 2006-05-31 2010-08-03 Georgia Tech Research Corporation Method for sealing and backside releasing of microelectromechanical systems
KR101332402B1 (ko) * 2006-07-10 2013-11-25 쇼오트 아게 부품 패키징 방법
JP2009063551A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
JP2009063550A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
US9289137B2 (en) * 2007-09-28 2016-03-22 Volcano Corporation Intravascular pressure devices incorporating sensors manufactured using deep reactive ion etching
DE102007058951B4 (de) * 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
US20100013033A1 (en) * 2008-07-18 2010-01-21 Chia-Shing Chou Enablement of IC devices during assembly
FR2949453A1 (fr) * 2009-09-02 2011-03-04 Commissariat Energie Atomique Dispositif et procede d'encapsulation, microcapsule incorporant ce dispositif
JP2011128140A (ja) 2009-11-19 2011-06-30 Dainippon Printing Co Ltd センサデバイス及びその製造方法
JP5006429B2 (ja) * 2010-06-11 2012-08-22 トレックス・セミコンダクター株式会社 半導体センサー装置およびその製造方法
US9131325B2 (en) 2010-08-31 2015-09-08 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
US8304275B2 (en) * 2010-08-31 2012-11-06 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
US20120146452A1 (en) * 2010-12-10 2012-06-14 Miradia, Inc. Microelectromechanical system device and semi-manufacture and manufacturing method thereof
TWI409885B (zh) * 2011-05-16 2013-09-21 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
TWI417973B (zh) * 2011-07-11 2013-12-01 矽品精密工業股份有限公司 具微機電元件之封裝結構之製法
US9040355B2 (en) 2012-07-11 2015-05-26 Freescale Semiconductor, Inc. Sensor package and method of forming same
US8709868B2 (en) 2012-08-23 2014-04-29 Freescale Semiconductor, Inc. Sensor packages and method of packaging dies of differing sizes
US8659167B1 (en) 2012-08-29 2014-02-25 Freescale Semiconductor, Inc. Sensor packaging method and sensor packages
US9099391B2 (en) * 2013-03-14 2015-08-04 Infineon Technologies Austria Ag Semiconductor package with top-side insulation layer
WO2015042700A1 (en) 2013-09-24 2015-04-02 Motion Engine Inc. Mems components and method of wafer-level manufacturing thereof
JP6339669B2 (ja) 2013-07-08 2018-06-06 モーション・エンジン・インコーポレーテッド Ｍｅｍｓデバイスおよび製造する方法
EP3028007A4 (de) 2013-08-02 2017-07-12 Motion Engine Inc. Mems-bewegungssensor und verfahren zur herstellung
JP6590812B2 (ja) 2014-01-09 2019-10-16 モーション・エンジン・インコーポレーテッド 集積ｍｅｍｓシステム
WO2015154173A1 (en) 2014-04-10 2015-10-15 Motion Engine Inc. Mems pressure sensor
WO2015184531A1 (en) 2014-06-02 2015-12-10 Motion Engine Inc. Multi-mass mems motion sensor
JP6256301B2 (ja) * 2014-10-31 2018-01-10 株式会社デンソー 電子回路部品
CA3004760A1 (en) 2014-12-09 2016-06-16 Motion Engine Inc. 3d mems magnetometer and associated methods
CA3220839A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
KR20170069806A (ko) * 2015-12-11 2017-06-21 현대자동차주식회사 멤스센서의 제조방법
CN109485010A (zh) * 2018-12-06 2019-03-19 中芯长电半导体（江阴）有限公司 Mems封装结构、晶圆级mems封装结构及其制备方法
US11784103B2 (en) * 2020-12-09 2023-10-10 Texas Instruments Incorporated Covers for semiconductor package components

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US159218A (en) * 1875-01-26 Improvement in musical merchandise-boxes
AT314820B (de) * 1969-02-18 1974-04-25 Optipatent Ag Vorrichtung zum Füllen von Gießformen
FR2596569B1 (fr) * 1986-03-25 1988-05-20 Ceraver Dispositif de demoulage d'un isolateur electrique composite
DE69116435T2 (de) * 1990-05-30 1996-08-14 Hitachi Automotive Eng Halbleiterbeschleunigungsmesser und Kraftfahrzeugsteuerungssystem mit einem solchen
JP2547894B2 (ja) * 1990-07-27 1996-10-23 株式会社東芝 半導体樹脂封止用金型機構
IL102556A (en) * 1991-08-16 1998-02-08 Johnson & Johnson Vision Prod Device and process for fusing detachable lens mold units
JPH06347475A (ja) * 1993-06-08 1994-12-22 Murata Mfg Co Ltd 加速度センサおよびその製造方法
IL107549A (en) * 1993-11-09 1996-01-31 Nova Measuring Instr Ltd Device for measuring the thickness of thin films
JPH07191055A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 静電容量式加速度センサ
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
JPH08233848A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体センサ
WO1996032692A1 (en) * 1995-04-10 1996-10-17 United Parcel Service Of America, Inc. Two-camera system for locating and storing indicia on conveyed items
JPH08304447A (ja) * 1995-05-02 1996-11-22 Mitsubishi Electric Corp 半導体加速度センサおよびその製造方法
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3496347B2 (ja) * 1995-07-13 2004-02-09 株式会社デンソー 半導体装置及びその製造方法
US5798557A (en) 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
WO1999013343A1 (fr) * 1997-09-10 1999-03-18 Matsushita Electric Industrial Co., Ltd. Capteur d'acceleration et procede de fabrication
JPH11138668A (ja) * 1997-11-12 1999-05-25 Komatsu Ltd 板状構造体とその製造方法
DE19806818C1 (de) * 1998-02-18 1999-11-04 Siemens Matsushita Components Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements
JP3846094B2 (ja) * 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
DE19857550A1 (de) * 1998-12-14 2000-06-21 Bosch Gmbh Robert Verfahren zur Verkapselung von metallischen Mikrobauteilen
JP4151164B2 (ja) * 1999-03-19 2008-09-17 株式会社デンソー 半導体装置の製造方法
JP3533984B2 (ja) * 1999-03-26 2004-06-07 松下電工株式会社 半導体加速度センサおよびその製造方法
TW411593B (en) * 1999-06-22 2000-11-11 Vanguard Int Semiconduct Corp Plastic carrier mold with magnetic inserting article
US6452238B1 (en) * 1999-10-04 2002-09-17 Texas Instruments Incorporated MEMS wafer level package
US6768628B2 (en) * 2001-04-26 2004-07-27 Rockwell Automation Technologies, Inc. Method for fabricating an isolated microelectromechanical system (MEMS) device incorporating a wafer level cap

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EP1358489A1 (de) 2003-11-05
US7407614B2 (en) 2008-08-05
US20040255670A1 (en) 2004-12-23
US20050142242A1 (en) 2005-06-30
AUPR245301A0 (en) 2001-02-01
JP2004525357A (ja) 2004-08-19
US20050142686A1 (en) 2005-06-30
AT9321U1 (de) 2007-08-15
US7284976B2 (en) 2007-10-23
EP1358489A4 (de) 2005-08-10
US20030122227A1 (en) 2003-07-03
EP1358489B1 (de) 2006-12-27
US6777259B2 (en) 2004-08-17
US6925875B2 (en) 2005-08-09
ATE349704T1 (de) 2007-01-15
WO2002056031A1 (en) 2002-07-18

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