DE60213101D1 - Niederspannungs-verstärkungszelle mit hoher bandbreite und spannungsfolgerschaltung mit verbesserter steilheit - Google Patents

Niederspannungs-verstärkungszelle mit hoher bandbreite und spannungsfolgerschaltung mit verbesserter steilheit

Info

Publication number
DE60213101D1
DE60213101D1 DE60213101T DE60213101T DE60213101D1 DE 60213101 D1 DE60213101 D1 DE 60213101D1 DE 60213101 T DE60213101 T DE 60213101T DE 60213101 T DE60213101 T DE 60213101T DE 60213101 D1 DE60213101 D1 DE 60213101D1
Authority
DE
Germany
Prior art keywords
voltage
high band
band width
improved spring
low voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60213101T
Other languages
English (en)
Other versions
DE60213101T2 (de
Inventor
Elmar Bach
Thomas Blon
Sasa Cyrusian
Stephen Franck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE60213101D1 publication Critical patent/DE60213101D1/de
Application granted granted Critical
Publication of DE60213101T2 publication Critical patent/DE60213101T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45659—Controlling the loading circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H03F3/45206—Folded cascode stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45418—Indexing scheme relating to differential amplifiers the CMCL comprising a resistor addition circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45454—Indexing scheme relating to differential amplifiers the CSC comprising biasing means controlled by the input signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
DE60213101T 2001-05-25 2002-05-24 Niederspannungs-verstärkungszelle mit hoher bandbreite und spannungsfolgerschaltung mit verbesserter steilheit Expired - Lifetime DE60213101T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/865,744 US6580326B2 (en) 2001-05-25 2001-05-25 High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance
US865744 2001-05-25
PCT/US2002/016758 WO2002097975A2 (en) 2001-05-25 2002-05-24 High-bandwidth low-voltage gain cell and voltage follower having an enhanced transconductance

Publications (2)

Publication Number Publication Date
DE60213101D1 true DE60213101D1 (de) 2006-08-24
DE60213101T2 DE60213101T2 (de) 2007-01-11

Family

ID=25346127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60213101T Expired - Lifetime DE60213101T2 (de) 2001-05-25 2002-05-24 Niederspannungs-verstärkungszelle mit hoher bandbreite und spannungsfolgerschaltung mit verbesserter steilheit

Country Status (5)

Country Link
US (1) US6580326B2 (de)
EP (1) EP1417752B1 (de)
CN (1) CN1260880C (de)
DE (1) DE60213101T2 (de)
WO (1) WO2002097975A2 (de)

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US6847251B2 (en) * 2001-01-11 2005-01-25 Media Tek, Inc. Differential charge pump circuit
US6552865B2 (en) * 2001-05-25 2003-04-22 Infineon Technologies Ag Diagnostic system for a read/write channel in a disk drive
JP2003124757A (ja) * 2001-10-16 2003-04-25 Texas Instr Japan Ltd アーリー効果の影響を低減する方法および装置
EP1424773B1 (de) * 2002-11-28 2007-01-24 STMicroelectronics S.r.l. Schaltungsvorrichtung zur Herstellung eines nicht-lineares Skaliernetzwerks mit reaktiven Elementen
US6924674B2 (en) * 2003-10-27 2005-08-02 Agere Systems Inc. Composite source follower
US7151410B2 (en) * 2003-12-17 2006-12-19 Agere Systems Inc. Class AB enhanced transconductance source follower
US7236030B2 (en) * 2004-06-30 2007-06-26 Texas Instruments Incorporated Method to implement hysteresis in a MOSFET differential pair input stage
US7498858B2 (en) * 2004-11-01 2009-03-03 Hewlett-Packard Development Company, L.P. Interpolator systems with linearity adjustments and related methods
US8179194B2 (en) * 2009-05-05 2012-05-15 Futurewei Technologies, Inc. System and method for a reference generator
CN101881984B (zh) * 2009-05-05 2013-04-24 华为技术有限公司 基准信号产生器及其方法和系统
FR2955219B1 (fr) * 2010-01-14 2012-08-31 St Microelectronics Sa Amplificateur dephaseur
CN102324896B (zh) * 2011-07-11 2014-07-09 复旦大学 一种带线性度补偿的宽带低噪声放大器
CN103019287B (zh) * 2011-09-27 2015-12-16 联发科技（新加坡）私人有限公司 控制电路与电路控制方法
DE102011122894B4 (de) 2011-09-30 2019-05-09 Intel Deutschland Gmbh Schaltung und Leistungsverstärker
CN104518740A (zh) * 2013-09-29 2015-04-15 Lsi公司 电压跟随器放大器
US9525391B2 (en) * 2014-03-05 2016-12-20 Mediatek Singapore Pte. Ltd. Fully differential class A/AB amplifier and method thereof
EP2945286B1 (de) * 2014-05-12 2018-06-27 ams AG Verstärkeranordnung und Verstärkungsverfahren
US10063199B2 (en) * 2016-06-09 2018-08-28 Analog Devices Global Buffer with increased headroom
US10734958B2 (en) * 2016-08-09 2020-08-04 Mediatek Inc. Low-voltage high-speed receiver
EP3309646B1 (de) * 2016-08-16 2022-05-25 Shenzhen Goodix Technology Co., Ltd. Linearer regulator
CN107196644A (zh) * 2017-05-07 2017-09-22 长沙方星腾电子科技有限公司 一种模拟缓冲器
US10250999B1 (en) 2017-09-18 2019-04-02 Infineon Technologies Ag PVT compensated resistive biasing architecture for a capacitive sensor
FR3085564A1 (fr) 2018-09-05 2020-03-06 Stmicroelectronics Sa Amplificateur a gain variable incorpore dans une chaine de reception
DE102018129910A1 (de) 2018-11-27 2020-05-28 Intel Corporation Konzept für einen gepufferten umgedrehten Spannungsfolger und für einen Spannungsregler mit niedrigem Dropout
US10614860B1 (en) * 2019-04-15 2020-04-07 Micron Technology, Inc. Systems for discharging leakage current over a range of process, voltage, temperature (PVT) conditions
CN110212876A (zh) * 2019-06-24 2019-09-06 南京芯耐特半导体有限公司 带内置负反馈的跟随器电路结构
CN111313852B (zh) * 2020-05-15 2020-09-11 微龛(广州)半导体有限公司 一种驱动放大器及模数转换器
CN113972558B (zh) * 2021-10-18 2023-09-29 厦门优迅高速芯片有限公司 光学器件驱动电路、光组件及电子设备

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Publication number Priority date Publication date Assignee Title
NL7102199A (de) * 1971-02-19 1972-08-22
FR2488077A1 (fr) * 1980-07-31 1982-02-05 Thomson Csf Etage de sortie basse impedance pour couplage capacitif ou direct
US4420726A (en) * 1981-06-04 1983-12-13 Rca Corporation Voltage-followers with low offset voltages
US4835489A (en) * 1987-02-13 1989-05-30 National Semiconductor Corporation Single-ended, feed-forward gain stage
US4825174A (en) * 1988-06-20 1989-04-25 American Telephone And Telegraph Company, At&T Bell Laboratories Symmetric integrated amplifier with controlled DC offset voltage
JP2517472B2 (ja) * 1990-10-26 1996-07-24 菊水電子工業株式会社 Ｆｅｔ緩衝増幅器
US5198782A (en) * 1991-01-15 1993-03-30 Crystal Semiconductor Low distortion amplifier output stage for dac
US5221909A (en) * 1992-04-30 1993-06-22 Raytheon Company Active load biasing circuit
JP2944398B2 (ja) * 1993-07-05 1999-09-06 日本電気株式会社 Ｍｏｓ差動電圧電流変換回路
US5712739A (en) * 1993-11-08 1998-01-27 Kabushiki Kaisha Toshiba Magnetic disk drive system with a composite head unit including a magnetoresistive read only head and an inductive write only head
US5469104A (en) * 1994-03-28 1995-11-21 Elantec, Inc. Active folded cascode
US5717536A (en) * 1995-09-19 1998-02-10 Vtc Inc. Single-ended cascode amplifier for magnetoresistive sensors
KR100449934B1 (ko) * 1995-11-21 2004-12-14 코닌클리케 필립스 일렉트로닉스 엔.브이. 자기기록헤드와,용량성피드-포워드보상기능을지닌기록증폭기를포함하는장치
JPH11195202A (ja) * 1997-11-04 1999-07-21 Hitachi Ltd 微小信号増幅装置とそれを用いた磁気ディスクメモリ装置

Also Published As

Publication number Publication date
EP1417752B1 (de) 2006-07-12
US6580326B2 (en) 2003-06-17
EP1417752A2 (de) 2004-05-12
US20020175761A1 (en) 2002-11-28
CN1524340A (zh) 2004-08-25
WO2002097975A2 (en) 2002-12-05
WO2002097975A3 (en) 2004-03-11
DE60213101T2 (de) 2007-01-11
CN1260880C (zh) 2006-06-21

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