DE60200888D1 - Referenzschaltung für mram zelle - Google Patents

Referenzschaltung für mram zelle

Info

Publication number
DE60200888D1
DE60200888D1 DE60200888T DE60200888T DE60200888D1 DE 60200888 D1 DE60200888 D1 DE 60200888D1 DE 60200888 T DE60200888 T DE 60200888T DE 60200888 T DE60200888 T DE 60200888T DE 60200888 D1 DE60200888 D1 DE 60200888D1
Authority
DE
Germany
Prior art keywords
reference circuit
mram cell
mram
cell
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60200888T
Other languages
English (en)
Other versions
DE60200888T2 (de
Inventor
Heinz Hoenigschmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60200888D1 publication Critical patent/DE60200888D1/de
Publication of DE60200888T2 publication Critical patent/DE60200888T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60200888T 2001-01-24 2002-01-24 Referenzschaltung für mram zelle Expired - Lifetime DE60200888T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26391001P 2001-01-24 2001-01-24
US263910P 2001-01-24
US09/836,817 US6426907B1 (en) 2001-01-24 2001-04-17 Reference for MRAM cell
US836817 2001-04-17
PCT/US2002/003040 WO2002073620A2 (en) 2001-01-24 2002-01-24 Reference for mram cell

Publications (2)

Publication Number Publication Date
DE60200888D1 true DE60200888D1 (de) 2004-09-09
DE60200888T2 DE60200888T2 (de) 2005-01-05

Family

ID=26950128

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60200888T Expired - Lifetime DE60200888T2 (de) 2001-01-24 2002-01-24 Referenzschaltung für mram zelle

Country Status (7)

Country Link
US (1) US6426907B1 (de)
EP (1) EP1377983B1 (de)
JP (1) JP2004519809A (de)
KR (1) KR100562203B1 (de)
DE (1) DE60200888T2 (de)
TW (1) TW548650B (de)
WO (1) WO2002073620A2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445612B1 (en) * 2001-08-27 2002-09-03 Motorola, Inc. MRAM with midpoint generator reference and method for readout
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier
US6650562B2 (en) * 2002-01-23 2003-11-18 Hewlett-Packard Development Company, L.P. System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
US6738303B1 (en) * 2002-11-27 2004-05-18 Motorola, Inc. Technique for sensing the state of a magneto-resistive random access memory
CN1717744B (zh) * 2002-11-28 2012-09-26 Nxp股份有限公司 检测磁数据存储设备中热弛豫的可能开始的方法和装置
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
US6707710B1 (en) * 2002-12-12 2004-03-16 Hewlett-Packard Development Company, L.P. Magnetic memory device with larger reference cell
TWI223259B (en) * 2003-01-07 2004-11-01 Ind Tech Res Inst A reference mid-point current generator for a magnetic random access memory
JP2005032401A (ja) * 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
JP2005252068A (ja) * 2004-03-05 2005-09-15 Sony Corp 記憶装置
DE102004047666B4 (de) 2004-09-30 2015-04-02 Qimonda Ag Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung
US20060092689A1 (en) * 2004-11-04 2006-05-04 Daniel Braun Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells
KR100735748B1 (ko) * 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
US7321507B2 (en) * 2005-11-21 2008-01-22 Magic Technologies, Inc. Reference cell scheme for MRAM
KR100735750B1 (ko) * 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
US20130107615A1 (en) * 2007-02-12 2013-05-02 Avalanche Technology, Inc. Memory sensing circuit
TWI336079B (en) * 2007-07-02 2011-01-11 Ind Tech Res Inst Magnetic random access memory and data reading circuit therefor
KR101068573B1 (ko) * 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
US8917536B2 (en) 2012-10-25 2014-12-23 Headway Technologies, Inc. Adaptive reference scheme for magnetic memory applications
US9318190B1 (en) 2014-09-30 2016-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device
WO2017074358A1 (en) 2015-10-28 2017-05-04 Hewlett Packard Enterprise Development Lp Reference column sensing for resistive memory
JP6574862B1 (ja) * 2018-03-15 2019-09-11 株式会社東芝 メモリ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608676A (en) * 1993-08-31 1997-03-04 Crystal Semiconductor Corporation Current limited current reference for non-volatile memory sensing
US6111781A (en) 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6055178A (en) 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
US6128239A (en) 1999-10-29 2000-10-03 Hewlett-Packard MRAM device including analog sense amplifiers
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6269040B1 (en) 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier

Also Published As

Publication number Publication date
WO2002073620A3 (en) 2003-11-06
TW548650B (en) 2003-08-21
DE60200888T2 (de) 2005-01-05
JP2004519809A (ja) 2004-07-02
KR100562203B1 (ko) 2006-03-22
US6426907B1 (en) 2002-07-30
EP1377983B1 (de) 2004-08-04
EP1377983A2 (de) 2004-01-07
WO2002073620A2 (en) 2002-09-19
KR20030091969A (ko) 2003-12-03

Similar Documents

Publication Publication Date Title
DE60200888D1 (de) Referenzschaltung für mram zelle
DE60303664D1 (de) Layout für thermisch ausgewählte kreuzpunkt mram zelle
DE60130586D1 (de) Speicherzelle
DE60116971D1 (de) Elektrochemische Zelle
DE60214452D1 (de) Stromreferenzschaltung
DE60235140D1 (de) Brennstoffzelle
DE60223986D1 (de) Brennstoffzelle
DE60134553D1 (de) Elektrode für elektrochrome Vorrichtungen
DE60113794D1 (de) Leitungshalter
DE60127338D1 (de) Elektrische Aufspannvorrichtung
ATE414333T1 (de) Lithium zelle
DE60216002D1 (de) Automatische Schaltung für Fahrrad
DE60101249D1 (de) Batteriemodul
DE60230016D1 (de) Brennstoffzelle
DE50210116D1 (de) Mram-anordnung
DE50115444D1 (de) Photovoltaische zelle
DE60220608D1 (de) Brennstoffzelle
DE10137953B8 (de) Verbindungsanordnung für Batterieanschlußklemmen
NO20025923D0 (no) Elektrolysecelle
DE60333700D1 (de) CAM Zelle
DE50213213D1 (de) Elektrische Bauelementanordnung
DE50103927D1 (de) Schaltungsanordnung zur rauscharmen volldifferenziellen verstärkung
DE50212610D1 (de) Brennstoffzellenblock
DE60216555D1 (de) Zellumschaltungsverfahren
DE50213513D1 (de) Elektrische Leitung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE