DE60212999T2 - Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes - Google Patents

Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes Download PDF

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Publication number
DE60212999T2
DE60212999T2 DE60212999T DE60212999T DE60212999T2 DE 60212999 T2 DE60212999 T2 DE 60212999T2 DE 60212999 T DE60212999 T DE 60212999T DE 60212999 T DE60212999 T DE 60212999T DE 60212999 T2 DE60212999 T2 DE 60212999T2
Authority
DE
Germany
Prior art keywords
composition according
fluoride
additive
composition
residues
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60212999T
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German (de)
English (en)
Other versions
DE60212999D1 (de
Inventor
Darryl W. Stewartsville Peters
Matthew I. West Norriton Egbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE60212999D1 publication Critical patent/DE60212999D1/de
Publication of DE60212999T2 publication Critical patent/DE60212999T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Solid Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Micromachines (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Extraction Or Liquid Replacement (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
DE60212999T 2001-02-09 2002-02-08 Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes Expired - Fee Related DE60212999T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001034337A JP2002237481A (ja) 2001-02-09 2001-02-09 微細構造体の洗浄方法
JP2001034337 2001-02-09

Publications (2)

Publication Number Publication Date
DE60212999D1 DE60212999D1 (de) 2006-08-17
DE60212999T2 true DE60212999T2 (de) 2006-12-28

Family

ID=18897963

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60212999T Expired - Fee Related DE60212999T2 (de) 2001-02-09 2002-02-08 Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes
DE60212937T Expired - Lifetime DE60212937T2 (de) 2001-02-09 2002-02-08 Verfahren zum Entfernen von Rückständen von der Mikrostruktur eines Objektes

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60212937T Expired - Lifetime DE60212937T2 (de) 2001-02-09 2002-02-08 Verfahren zum Entfernen von Rückständen von der Mikrostruktur eines Objektes

Country Status (10)

Country Link
US (3) US20020164873A1 (https=)
EP (2) EP1358670B1 (https=)
JP (2) JP2002237481A (https=)
KR (2) KR100482496B1 (https=)
CN (2) CN1542910A (https=)
AT (2) ATE332571T1 (https=)
DE (2) DE60212999T2 (https=)
SG (1) SG125957A1 (https=)
TW (1) TW569328B (https=)
WO (1) WO2002080233A2 (https=)

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US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP3978023B2 (ja) * 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7557073B2 (en) * 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US20040016450A1 (en) * 2002-01-25 2004-01-29 Bertram Ronald Thomas Method for reducing the formation of contaminants during supercritical carbon dioxide processes
JP2003224099A (ja) * 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003070846A2 (en) * 2002-02-15 2003-08-28 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
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US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
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US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20030217764A1 (en) * 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
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JP2004128251A (ja) * 2002-10-03 2004-04-22 Elpida Memory Inc 塗布機及び塗布方法
US7223352B2 (en) * 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
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JP2004158534A (ja) * 2002-11-05 2004-06-03 Kobe Steel Ltd 微細構造体の洗浄方法
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
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JP2005033135A (ja) * 2003-07-11 2005-02-03 Kobe Steel Ltd 微細構造体の洗浄装置
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US20050022850A1 (en) * 2003-07-29 2005-02-03 Supercritical Systems, Inc. Regulation of flow of processing chemistry only into a processing chamber
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JP4757452B2 (ja) * 2004-04-02 2011-08-24 昭和炭酸株式会社 気液分離装置
US7195676B2 (en) 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
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US20060081273A1 (en) * 2004-10-20 2006-04-20 Mcdermott Wayne T Dense fluid compositions and processes using same for article treatment and residue removal
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US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
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US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
JP2007142335A (ja) * 2005-11-22 2007-06-07 Dainippon Screen Mfg Co Ltd 高圧処理方法
JP4179378B2 (ja) * 2007-01-04 2008-11-12 トヨタ自動車株式会社 車両の駆動制御装置、および、車両
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Also Published As

Publication number Publication date
JP3996513B2 (ja) 2007-10-24
ATE332571T1 (de) 2006-07-15
JP2002237481A (ja) 2002-08-23
US20030106573A1 (en) 2003-06-12
KR100490506B1 (ko) 2005-05-19
EP1358670B1 (en) 2006-07-05
EP1457550B1 (en) 2006-07-05
EP1457550A3 (en) 2004-11-03
EP1358670A2 (en) 2003-11-05
KR20020093896A (ko) 2002-12-16
CN1243366C (zh) 2006-02-22
EP1358670A4 (en) 2004-11-17
TW569328B (en) 2004-01-01
ATE332355T1 (de) 2006-07-15
EP1457550A2 (en) 2004-09-15
CN1457502A (zh) 2003-11-19
US20020164873A1 (en) 2002-11-07
DE60212999D1 (de) 2006-08-17
DE60212937D1 (de) 2006-08-17
SG125957A1 (en) 2006-10-30
JP2004519863A (ja) 2004-07-02
KR20040040490A (ko) 2004-05-12
DE60212937T2 (de) 2007-12-06
US20040198627A1 (en) 2004-10-07
WO2002080233A3 (en) 2002-11-14
WO2002080233A2 (en) 2002-10-10
CN1542910A (zh) 2004-11-03
KR100482496B1 (ko) 2005-04-14

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