ATE332571T1 - Prozess zum entfernen von resten aus der mikrostruktur eines objekts - Google Patents
Prozess zum entfernen von resten aus der mikrostruktur eines objektsInfo
- Publication number
- ATE332571T1 ATE332571T1 AT02736487T AT02736487T ATE332571T1 AT E332571 T1 ATE332571 T1 AT E332571T1 AT 02736487 T AT02736487 T AT 02736487T AT 02736487 T AT02736487 T AT 02736487T AT E332571 T1 ATE332571 T1 AT E332571T1
- Authority
- AT
- Austria
- Prior art keywords
- microstructure
- residue
- removal
- additive
- carbon dioxide
- Prior art date
Links
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 4
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract 2
- 239000001569 carbon dioxide Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000006184 cosolvent Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Extraction Or Liquid Replacement (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Ceramic Products (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Drying Of Solid Materials (AREA)
- Micromachines (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001034337A JP2002237481A (ja) | 2001-02-09 | 2001-02-09 | 微細構造体の洗浄方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE332571T1 true ATE332571T1 (de) | 2006-07-15 |
Family
ID=18897963
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02736487T ATE332571T1 (de) | 2001-02-09 | 2002-02-08 | Prozess zum entfernen von resten aus der mikrostruktur eines objekts |
AT04011792T ATE332355T1 (de) | 2001-02-09 | 2002-02-08 | Zusammensetzung für rückstandentfernung von der mikrostruktur eines objekts |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04011792T ATE332355T1 (de) | 2001-02-09 | 2002-02-08 | Zusammensetzung für rückstandentfernung von der mikrostruktur eines objekts |
Country Status (10)
Country | Link |
---|---|
US (3) | US20030106573A1 (de) |
EP (2) | EP1358670B1 (de) |
JP (2) | JP2002237481A (de) |
KR (2) | KR100482496B1 (de) |
CN (2) | CN1542910A (de) |
AT (2) | ATE332571T1 (de) |
DE (2) | DE60212937T2 (de) |
SG (1) | SG125957A1 (de) |
TW (1) | TW569328B (de) |
WO (1) | WO2002080233A2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
EP1277233A2 (de) * | 2000-04-25 | 2003-01-22 | Tokyo Electron Corporation | Verfahren zur abscheidung einer metallschicht und mehrkammerreaktor mit einem superkritischen trocknungs-/reinigungsmodul zur metallabscheidung |
JP3978023B2 (ja) * | 2001-12-03 | 2007-09-19 | 株式会社神戸製鋼所 | 高圧処理方法 |
US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
US7557073B2 (en) * | 2001-12-31 | 2009-07-07 | Advanced Technology Materials, Inc. | Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist |
JP2005516405A (ja) * | 2002-01-25 | 2005-06-02 | 東京エレクトロン株式会社 | 超臨界二酸化炭素プロセス中の汚染物の形成を低減する方法 |
JP2003224099A (ja) * | 2002-01-30 | 2003-08-08 | Sony Corp | 表面処理方法 |
AU2003217547A1 (en) * | 2002-02-15 | 2003-09-09 | Supercritical Systems Inc. | Drying resist with a solvent bath and supercritical co2 |
WO2003077032A1 (en) * | 2002-03-04 | 2003-09-18 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
US20040072706A1 (en) * | 2002-03-22 | 2004-04-15 | Arena-Foster Chantal J. | Removal of contaminants using supercritical processing |
US7169540B2 (en) * | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
JP2003318810A (ja) * | 2002-04-26 | 2003-11-07 | Kobe Steel Ltd | 無線データ収集システム,無線データ中継装置 |
US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
US20030217764A1 (en) * | 2002-05-23 | 2003-11-27 | Kaoru Masuda | Process and composition for removing residues from the microstructure of an object |
US6800142B1 (en) * | 2002-05-30 | 2004-10-05 | Novellus Systems, Inc. | Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment |
JP2004128251A (ja) * | 2002-10-03 | 2004-04-22 | Elpida Memory Inc | 塗布機及び塗布方法 |
US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
JP2004158534A (ja) * | 2002-11-05 | 2004-06-03 | Kobe Steel Ltd | 微細構造体の洗浄方法 |
US20040177867A1 (en) * | 2002-12-16 | 2004-09-16 | Supercritical Systems, Inc. | Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal |
US20040112409A1 (en) * | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
JP4248903B2 (ja) | 2003-03-19 | 2009-04-02 | 大日本スクリーン製造株式会社 | 高圧処理装置および高圧処理方法 |
US20040231707A1 (en) * | 2003-05-20 | 2004-11-25 | Paul Schilling | Decontamination of supercritical wafer processing equipment |
KR100505693B1 (ko) * | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법 |
JP2005033135A (ja) * | 2003-07-11 | 2005-02-03 | Kobe Steel Ltd | 微細構造体の洗浄装置 |
US20050022850A1 (en) * | 2003-07-29 | 2005-02-03 | Supercritical Systems, Inc. | Regulation of flow of processing chemistry only into a processing chamber |
US20050039775A1 (en) * | 2003-08-19 | 2005-02-24 | Whitlock Walter H. | Process and system for cleaning surfaces of semiconductor wafers |
JP4757452B2 (ja) * | 2004-04-02 | 2011-08-24 | 昭和炭酸株式会社 | 気液分離装置 |
US7195676B2 (en) * | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
US20060081273A1 (en) * | 2004-10-20 | 2006-04-20 | Mcdermott Wayne T | Dense fluid compositions and processes using same for article treatment and residue removal |
US7550075B2 (en) * | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
JP2007142335A (ja) * | 2005-11-22 | 2007-06-07 | Dainippon Screen Mfg Co Ltd | 高圧処理方法 |
JP4179378B2 (ja) * | 2007-01-04 | 2008-11-12 | トヨタ自動車株式会社 | 車両の駆動制御装置、および、車両 |
JP6682272B2 (ja) | 2013-01-15 | 2020-04-15 | ローレンス リバモア ナショナル セキュリティー, エルエルシー | レーザー駆動の熱水処理 |
FR3021554A1 (fr) * | 2014-05-28 | 2015-12-04 | Dfd Dense Fluid Degreasing | Procede et dispositif de traitement par fluide supercritique avec injection d'additif |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5339844A (en) * | 1992-08-10 | 1994-08-23 | Hughes Aircraft Company | Low cost equipment for cleaning using liquefiable gases |
US5456759A (en) * | 1992-08-10 | 1995-10-10 | Hughes Aircraft Company | Method using megasonic energy in liquefied gases |
KR0137841B1 (ko) * | 1994-06-07 | 1998-04-27 | 문정환 | 식각잔류물 제거방법 |
JPH08330266A (ja) * | 1995-05-31 | 1996-12-13 | Texas Instr Inc <Ti> | 半導体装置等の表面を浄化し、処理する方法 |
US5868856A (en) * | 1996-07-25 | 1999-02-09 | Texas Instruments Incorporated | Method for removing inorganic contamination by chemical derivitization and extraction |
US5868862A (en) * | 1996-08-01 | 1999-02-09 | Texas Instruments Incorporated | Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US6118000A (en) * | 1996-11-04 | 2000-09-12 | Hydrochem Industrial Services, Inc. | Methods for preparing quaternary ammonium salts |
US5709756A (en) * | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US5983082A (en) * | 1997-10-31 | 1999-11-09 | Motorola, Inc. | Phase quadrature signal generator having a variable phase shift network |
US6200943B1 (en) * | 1998-05-28 | 2001-03-13 | Micell Technologies, Inc. | Combination surfactant systems for use in carbon dioxide-based cleaning formulations |
US6242165B1 (en) * | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
SG77710A1 (en) * | 1998-09-09 | 2001-01-16 | Tokuyama Corp | Photoresist ashing residue cleaning agent |
US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
CA2255413A1 (en) * | 1998-12-11 | 2000-06-11 | Fracmaster Ltd. | Foamed nitrogen in liquid co2 for fracturing |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
KR100559017B1 (ko) * | 2000-08-14 | 2006-03-10 | 동경 엘렉트론 주식회사 | 초임계 이산화탄소를 이용하는 반도체로부터의포토레지스트 및 포토레지스트 잔사의 제거법 |
US6425956B1 (en) * | 2001-01-05 | 2002-07-30 | International Business Machines Corporation | Process for removing chemical mechanical polishing residual slurry |
US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
US20030217764A1 (en) * | 2002-05-23 | 2003-11-27 | Kaoru Masuda | Process and composition for removing residues from the microstructure of an object |
-
2001
- 2001-02-09 JP JP2001034337A patent/JP2002237481A/ja active Pending
-
2002
- 2002-02-08 CN CNA2004100447914A patent/CN1542910A/zh active Pending
- 2002-02-08 SG SG200402533A patent/SG125957A1/en unknown
- 2002-02-08 CN CNB028002741A patent/CN1243366C/zh not_active Expired - Fee Related
- 2002-02-08 DE DE60212937T patent/DE60212937T2/de not_active Expired - Lifetime
- 2002-02-08 DE DE60212999T patent/DE60212999T2/de not_active Expired - Fee Related
- 2002-02-08 AT AT02736487T patent/ATE332571T1/de not_active IP Right Cessation
- 2002-02-08 JP JP2002578549A patent/JP3996513B2/ja not_active Expired - Fee Related
- 2002-02-08 US US10/240,848 patent/US20030106573A1/en not_active Abandoned
- 2002-02-08 KR KR10-2002-7013494A patent/KR100482496B1/ko not_active IP Right Cessation
- 2002-02-08 WO PCT/US2002/003608 patent/WO2002080233A2/en active IP Right Grant
- 2002-02-08 US US10/067,773 patent/US20020164873A1/en not_active Abandoned
- 2002-02-08 TW TW091102499A patent/TW569328B/zh not_active IP Right Cessation
- 2002-02-08 AT AT04011792T patent/ATE332355T1/de not_active IP Right Cessation
- 2002-02-08 EP EP02736487A patent/EP1358670B1/de not_active Expired - Lifetime
- 2002-02-08 EP EP04011792A patent/EP1457550B1/de not_active Expired - Lifetime
- 2002-02-08 KR KR10-2004-7006269A patent/KR100490506B1/ko not_active IP Right Cessation
-
2004
- 2004-04-09 US US10/820,695 patent/US20040198627A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20040198627A1 (en) | 2004-10-07 |
CN1243366C (zh) | 2006-02-22 |
DE60212937D1 (de) | 2006-08-17 |
WO2002080233A3 (en) | 2002-11-14 |
KR100482496B1 (ko) | 2005-04-14 |
EP1457550A3 (de) | 2004-11-03 |
WO2002080233A2 (en) | 2002-10-10 |
KR20020093896A (ko) | 2002-12-16 |
JP3996513B2 (ja) | 2007-10-24 |
JP2002237481A (ja) | 2002-08-23 |
CN1542910A (zh) | 2004-11-03 |
KR20040040490A (ko) | 2004-05-12 |
US20030106573A1 (en) | 2003-06-12 |
DE60212999D1 (de) | 2006-08-17 |
SG125957A1 (en) | 2006-10-30 |
KR100490506B1 (ko) | 2005-05-19 |
EP1457550A2 (de) | 2004-09-15 |
EP1358670B1 (de) | 2006-07-05 |
CN1457502A (zh) | 2003-11-19 |
DE60212999T2 (de) | 2006-12-28 |
DE60212937T2 (de) | 2007-12-06 |
US20020164873A1 (en) | 2002-11-07 |
EP1457550B1 (de) | 2006-07-05 |
TW569328B (en) | 2004-01-01 |
JP2004519863A (ja) | 2004-07-02 |
EP1358670A2 (de) | 2003-11-05 |
ATE332355T1 (de) | 2006-07-15 |
EP1358670A4 (de) | 2004-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE332571T1 (de) | Prozess zum entfernen von resten aus der mikrostruktur eines objekts | |
DE60304389D1 (de) | Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts | |
ATE421905T1 (de) | Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern | |
TW200630482A (en) | Aqueous based residue removers comprising fluoride | |
PL1733782T3 (pl) | Sposób usuwania dwutlenku węgla z gazów spalinowych zawierających dwutlenek siarki | |
MY130650A (en) | Compositions for removing etching residue and use thereof | |
DE60136353D1 (de) | Reinigungsmittel, reinigungsverfahren und reinigungsgerät | |
EP2161619B8 (de) | Reinigungsverfahren und Immersionslithographiegerät | |
DE60030877D1 (de) | Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen | |
DE60025588D1 (de) | Verfahren zum chemischen trockenreinigen | |
DE69005967D1 (de) | Peressigsäure Kompositionen und Verfahren zum Erhalten von diesen Kompositionen. | |
DE59912239D1 (de) | Verfahren und Vorrichtung zum Entzundern einer Oszillationsmarken aufweisenden Oberfläche eines Gussstranges aus einer Stranggiessanlage | |
DOP2007000028A (es) | Composiciones de ramnolípidos y métodos relacionados con su uso | |
DE60042061D1 (de) | Verfahren zum Einstellen der Grösse von Kühllöchern eines Bauteils einer Gasturbine | |
DE59901125D1 (de) | Verfahren zum reinigen von druckmaschinen und druckformen | |
CA2436185A1 (en) | Method for obtaining 4-(n-alkylamine)-5, 6-dihydro-4h-thieno-(2,3-b)-thiopyran-2-sulfamide-7, 7-dioxides and intermediate products | |
DE60225948D1 (de) | Verfahren zum reinigen von textilien | |
BRPI0504222A (pt) | método para lavar tecidos com um fluido de trabalho não aquoso usando um fluido de enxágue selecionado | |
DE50205960D1 (de) | Verfahren und wechseleinrichtung zum aus- oder einbauen eines untergefässes eines elektrolichtbogenofens | |
ATE313390T1 (de) | Verfahren zum reinigen von harten oberflächen unter verwendung von einer mikroemulsion um organische und/oder mineralische flecken zu entfernen | |
ATE232412T1 (de) | Verfahren zur reinigung eines abgases | |
ATE363467T1 (de) | Verfahren zur behandlung einer organischen lösung eines sulfonylgruppe tragenden imids | |
DE60222808D1 (de) | Verfahren zum trockenreinigen unter verwendung von verdichtetem kohlendioxid | |
TW577120B (en) | Process, apparatus and composition for removing residues from the microstructure of an object | |
DE50212407D1 (de) | Verwendung eines Reinigungsmittelkonzentrats und Verfahren zur Reinigung chirurgischer Instrumente |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |