DE60208446T2 - Verfahren zur Herstellung einer Anzeigevorrichtung - Google Patents
Verfahren zur Herstellung einer Anzeigevorrichtung Download PDFInfo
- Publication number
- DE60208446T2 DE60208446T2 DE60208446T DE60208446T DE60208446T2 DE 60208446 T2 DE60208446 T2 DE 60208446T2 DE 60208446 T DE60208446 T DE 60208446T DE 60208446 T DE60208446 T DE 60208446T DE 60208446 T2 DE60208446 T2 DE 60208446T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- porous
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/01—Function characteristic transmissive
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001024172 | 2001-01-31 | ||
JP2001024172A JP2002229473A (ja) | 2001-01-31 | 2001-01-31 | 表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60208446D1 DE60208446D1 (de) | 2006-02-02 |
DE60208446T2 true DE60208446T2 (de) | 2006-08-03 |
Family
ID=18889349
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60203426T Expired - Lifetime DE60203426T2 (de) | 2001-01-31 | 2002-01-30 | Verfahren zur Herstellung einer Anzeigevorrichtung |
DE60208446T Expired - Lifetime DE60208446T2 (de) | 2001-01-31 | 2002-01-30 | Verfahren zur Herstellung einer Anzeigevorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60203426T Expired - Lifetime DE60203426T2 (de) | 2001-01-31 | 2002-01-30 | Verfahren zur Herstellung einer Anzeigevorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6891578B2 (fr) |
EP (2) | EP1229380B1 (fr) |
JP (1) | JP2002229473A (fr) |
DE (2) | DE60203426T2 (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4708577B2 (ja) | 2001-01-31 | 2011-06-22 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
JP4803884B2 (ja) * | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
JP2003258210A (ja) | 2001-12-27 | 2003-09-12 | Canon Inc | 表示装置及びその製造方法 |
JP4837240B2 (ja) * | 2002-09-25 | 2011-12-14 | シャープ株式会社 | 半導体装置 |
US7508034B2 (en) * | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
JP5064343B2 (ja) * | 2002-09-25 | 2012-10-31 | シャープ株式会社 | 半導体装置の製造方法 |
JP2004311955A (ja) * | 2003-03-25 | 2004-11-04 | Sony Corp | 超薄型電気光学表示装置の製造方法 |
US7622363B2 (en) * | 2003-05-06 | 2009-11-24 | Canon Kabushiki Kaisha | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
JP2004335642A (ja) * | 2003-05-06 | 2004-11-25 | Canon Inc | 基板およびその製造方法 |
US20050124137A1 (en) * | 2003-05-07 | 2005-06-09 | Canon Kabushiki Kaisha | Semiconductor substrate and manufacturing method therefor |
TWI242232B (en) * | 2003-06-09 | 2005-10-21 | Canon Kk | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
JP2005005509A (ja) * | 2003-06-12 | 2005-01-06 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
JP2005026472A (ja) * | 2003-07-02 | 2005-01-27 | Sharp Corp | 半導体装置の製造方法 |
US7199637B2 (en) * | 2003-09-02 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Rectifier circuit without alternating-current feedback |
JP4554180B2 (ja) * | 2003-09-17 | 2010-09-29 | ソニー株式会社 | 薄膜半導体デバイスの製造方法 |
US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
CN100481327C (zh) * | 2004-04-28 | 2009-04-22 | 汉阳大学校产学协力团 | 柔性光电设备及其制造方法 |
US7023520B2 (en) * | 2004-06-18 | 2006-04-04 | Charmica Photoelectronic Co., Ltd. | Method and system for fabricating liquid crystal film and method for fabricating brightening film |
JP2006012914A (ja) * | 2004-06-22 | 2006-01-12 | Canon Inc | 集積回路チップの製造方法及び半導体装置 |
JP4771510B2 (ja) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | 半導体層の製造方法及び基板の製造方法 |
JP4950047B2 (ja) * | 2004-07-22 | 2012-06-13 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | ゲルマニウムの成長方法及び半導体基板の製造方法 |
KR101152141B1 (ko) * | 2005-06-08 | 2012-06-15 | 삼성전자주식회사 | 액정표시패널과 액정표시패널의 제조방법 |
JP5171016B2 (ja) | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | 半導体部材、半導体物品の製造方法、その製造方法を用いたledアレイ |
JP2009094144A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 発光素子の製造方法 |
TWI493609B (zh) * | 2007-10-23 | 2015-07-21 | Semiconductor Energy Lab | 半導體基板、顯示面板及顯示裝置的製造方法 |
FR2936357B1 (fr) * | 2008-09-24 | 2010-12-10 | Commissariat Energie Atomique | Procede de report de puces sur un substrat. |
JP5695535B2 (ja) * | 2011-09-27 | 2015-04-08 | 株式会社東芝 | 表示装置の製造方法 |
CN107393934B (zh) | 2017-08-14 | 2020-02-21 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
CN107507841B (zh) * | 2017-09-22 | 2021-01-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
JP2022541172A (ja) * | 2019-07-19 | 2022-09-22 | アイキューイー ピーエルシー | 調整可能な誘電率及び調整可能な熱伝導率を有する半導体材料 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206749A (en) | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5256562A (en) | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
JP3257580B2 (ja) | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
US5942768A (en) * | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
US6107213A (en) | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
JP3381443B2 (ja) | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
JP3893645B2 (ja) | 1996-03-18 | 2007-03-14 | ソニー株式会社 | 薄膜半導体装置およびicカードの製造方法 |
CN1143394C (zh) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
JP3662260B2 (ja) | 1996-09-24 | 2005-06-22 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CA2225131C (fr) * | 1996-12-18 | 2002-01-01 | Canon Kabushiki Kaisha | Procede de production d'articles semi-conducteurs |
EP0851513B1 (fr) | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Méthode de fabrication d'un composant semiconducteur et méthode de fabrication d'une cellule solaire |
CA2233127C (fr) | 1997-03-27 | 2004-07-06 | Canon Kabushiki Kaisha | Methode et appareil pour separer un element composite au moyen d'un fluide |
JP3492142B2 (ja) | 1997-03-27 | 2004-02-03 | キヤノン株式会社 | 半導体基材の製造方法 |
US6245161B1 (en) | 1997-05-12 | 2001-06-12 | Silicon Genesis Corporation | Economical silicon-on-silicon hybrid wafer assembly |
JPH115064A (ja) | 1997-06-16 | 1999-01-12 | Canon Inc | 試料の分離装置及びその方法並びに基板の製造方法 |
EP0926709A3 (fr) | 1997-12-26 | 2000-08-30 | Canon Kabushiki Kaisha | Méthode de fabrication d'une structure SOI |
US6075280A (en) | 1997-12-31 | 2000-06-13 | Winbond Electronics Corporation | Precision breaking of semiconductor wafer into chips by applying an etch process |
MY118019A (en) | 1998-02-18 | 2004-08-30 | Canon Kk | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
JPH11240730A (ja) | 1998-02-27 | 1999-09-07 | Nec Kansai Ltd | 脆性材料の割断方法 |
US6222513B1 (en) | 1998-03-10 | 2001-04-24 | Xerox Corporation | Charge retention islands for electric paper and applications thereof |
US6331208B1 (en) | 1998-05-15 | 2001-12-18 | Canon Kabushiki Kaisha | Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor |
US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
US6465329B1 (en) | 1999-01-20 | 2002-10-15 | Amkor Technology, Inc. | Microcircuit die-sawing protector and method |
US6455398B1 (en) * | 1999-07-16 | 2002-09-24 | Massachusetts Institute Of Technology | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
JP2001094136A (ja) * | 1999-09-22 | 2001-04-06 | Canon Inc | 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法 |
TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
SG143972A1 (en) * | 2000-09-14 | 2008-07-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US6518079B2 (en) | 2000-12-20 | 2003-02-11 | Lumileds Lighting, U.S., Llc | Separation method for gallium nitride devices on lattice-mismatched substrates |
JP4708577B2 (ja) * | 2001-01-31 | 2011-06-22 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
JP4803884B2 (ja) | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
-
2001
- 2001-01-31 JP JP2001024172A patent/JP2002229473A/ja not_active Withdrawn
-
2002
- 2002-01-30 DE DE60203426T patent/DE60203426T2/de not_active Expired - Lifetime
- 2002-01-30 EP EP02002257A patent/EP1229380B1/fr not_active Expired - Lifetime
- 2002-01-30 EP EP04017005A patent/EP1482353B1/fr not_active Expired - Lifetime
- 2002-01-30 DE DE60208446T patent/DE60208446T2/de not_active Expired - Lifetime
- 2002-01-31 US US10/059,171 patent/US6891578B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60203426D1 (de) | 2005-05-04 |
US6891578B2 (en) | 2005-05-10 |
EP1482353B1 (fr) | 2005-12-28 |
EP1482353A1 (fr) | 2004-12-01 |
EP1229380A1 (fr) | 2002-08-07 |
EP1229380B1 (fr) | 2005-03-30 |
DE60203426T2 (de) | 2006-05-11 |
US20020102758A1 (en) | 2002-08-01 |
DE60208446D1 (de) | 2006-02-02 |
JP2002229473A (ja) | 2002-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |