DE60205358D1 - Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat - Google Patents

Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat

Info

Publication number
DE60205358D1
DE60205358D1 DE60205358T DE60205358T DE60205358D1 DE 60205358 D1 DE60205358 D1 DE 60205358D1 DE 60205358 T DE60205358 T DE 60205358T DE 60205358 T DE60205358 T DE 60205358T DE 60205358 D1 DE60205358 D1 DE 60205358D1
Authority
DE
Germany
Prior art keywords
support
surface layer
labels
carrier
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60205358T
Other languages
English (en)
Other versions
DE60205358T2 (de
Inventor
Christophe Figuet
Bernard Aspar
Vincent Blet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE60205358D1 publication Critical patent/DE60205358D1/de
Application granted granted Critical
Publication of DE60205358T2 publication Critical patent/DE60205358T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
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    • H01L2924/30—Technical effects
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    • H01L2924/30105—Capacitance
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Thin Film Transistor (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Soundproofing, Sound Blocking, And Sound Damping (AREA)
DE60205358T 2001-04-03 2002-04-02 Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat Expired - Lifetime DE60205358T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0104502A FR2823012B1 (fr) 2001-04-03 2001-04-03 Procede de transfert selectif d'au moins un element d'un support initial sur un support final
FR0104502 2001-04-03
PCT/FR2002/001132 WO2002082502A2 (fr) 2001-04-03 2002-04-02 Procede de transfert selectif de puces semiconductrices d'un support initial sur un support final

Publications (2)

Publication Number Publication Date
DE60205358D1 true DE60205358D1 (de) 2005-09-08
DE60205358T2 DE60205358T2 (de) 2006-07-06

Family

ID=8861875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60205358T Expired - Lifetime DE60205358T2 (de) 2001-04-03 2002-04-02 Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat

Country Status (11)

Country Link
US (1) US6959863B2 (de)
EP (1) EP1386346B1 (de)
JP (1) JP4249490B2 (de)
KR (1) KR100878059B1 (de)
CN (1) CN1322575C (de)
AT (1) ATE301332T1 (de)
DE (1) DE60205358T2 (de)
FR (1) FR2823012B1 (de)
MY (1) MY124843A (de)
TW (1) TWI255486B (de)
WO (1) WO2002082502A2 (de)

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US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
PT1568071T (pt) * 2002-11-29 2019-06-17 Fraunhofer Ges Forschung Pastilha com camada de separação e camada de suporte e seu processo de fabrico
US7056810B2 (en) 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
WO2005048363A2 (en) * 2003-11-12 2005-05-26 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed
GB2412786A (en) * 2004-03-24 2005-10-05 E2V Tech Uk Ltd Method and apparatus for manufacturing chip scale components or microcomponents
FR2871291B1 (fr) * 2004-06-02 2006-12-08 Tracit Technologies Procede de transfert de plaques
FR2877142B1 (fr) * 2004-10-21 2007-05-11 Commissariat Energie Atomique Procede de transfert d'au moins un objet de taille micrometrique ou millimetrique au moyen d'une poignee en polymere.
CN100383929C (zh) * 2005-02-01 2008-04-23 矽品精密工业股份有限公司 一种半导体处理制程
WO2006121906A1 (en) * 2005-05-10 2006-11-16 Dow Corning Corporation Sub-micron decal transfer lithography
US7779522B2 (en) * 2006-05-05 2010-08-24 Fujifilm Dimatix, Inc. Method for forming a MEMS
US20070257580A1 (en) * 2006-05-05 2007-11-08 Fujifilm Dimatix, Inc. Polishing Piezoelectric Material
US8201325B2 (en) * 2007-11-22 2012-06-19 International Business Machines Corporation Method for producing an integrated device
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
JP5637136B2 (ja) * 2009-07-07 2014-12-10 株式会社村田製作所 弾性波デバイスおよび弾性波デバイスの製造方法
US20110012239A1 (en) * 2009-07-17 2011-01-20 Qualcomm Incorporated Barrier Layer On Polymer Passivation For Integrated Circuit Packaging
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8735191B2 (en) 2012-01-04 2014-05-27 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding using pedestals
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
WO2014020387A1 (en) 2012-07-31 2014-02-06 Soitec Methods of forming semiconductor structures including mems devices and integrated circuits on opposing sides of substrates, and related structures and devices
FR2995447B1 (fr) * 2012-09-07 2014-09-05 Soitec Silicon On Insulator Procede de separation d'au moins deux substrats selon une interface choisie
CN103009387B (zh) * 2012-12-20 2016-05-04 华南理工大学 一种液滴微操作机械手及控制方法
KR20220075241A (ko) * 2014-08-05 2022-06-07 쿨리케 & 소파 네덜란드 비.브이. 쉬운 조립을 위한 초소형 또는 초박형 개별 컴포넌트의 구성
US9209142B1 (en) * 2014-09-05 2015-12-08 Skorpios Technologies, Inc. Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal
CN108431971B (zh) * 2015-12-23 2021-07-27 歌尔股份有限公司 微发光二极管转移方法及制造方法
US9887119B1 (en) * 2016-09-30 2018-02-06 International Business Machines Corporation Multi-chip package assembly
WO2021138794A1 (en) * 2020-01-07 2021-07-15 Yangtze Memory Technologies Co., Ltd. Methods for multi-wafer stacking and dicing

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WO2002082502A2 (fr) 2002-10-17
TWI255486B (en) 2006-05-21
FR2823012B1 (fr) 2004-05-21
MY124843A (en) 2006-07-31
EP1386346A2 (de) 2004-02-04
KR20030090706A (ko) 2003-11-28
JP4249490B2 (ja) 2009-04-02
DE60205358T2 (de) 2006-07-06
FR2823012A1 (fr) 2002-10-04
CN1513204A (zh) 2004-07-14
US6959863B2 (en) 2005-11-01
EP1386346B1 (de) 2005-08-03
KR100878059B1 (ko) 2009-01-14
CN1322575C (zh) 2007-06-20
JP2004526323A (ja) 2004-08-26
WO2002082502A3 (fr) 2003-11-06
US20040104272A1 (en) 2004-06-03
ATE301332T1 (de) 2005-08-15

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