CN108431971B - 微发光二极管转移方法及制造方法 - Google Patents

微发光二极管转移方法及制造方法 Download PDF

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CN108431971B
CN108431971B CN201580085204.2A CN201580085204A CN108431971B CN 108431971 B CN108431971 B CN 108431971B CN 201580085204 A CN201580085204 A CN 201580085204A CN 108431971 B CN108431971 B CN 108431971B
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micro light
light emitting
emitting diode
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substrate
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CN108431971A (zh
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邹泉波
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Goertek Inc
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Abstract

本发明公开了一种微发光二极管转移方法及制造方法。微发光二极管转移方法包括：在承载衬底上涂覆牺牲层，其中，微发光二极管通过第一接合层被接合在承载衬底上(S1100)；对牺牲层进行构图，以暴露要拾取的微发光二极管(S1200)；通过第二接合层将要拾取的微发光二极管接合到拾取衬底(S1300)；通过侧向钻蚀去除牺牲层(S1400)；从承载衬底剥离要拾取的微发光二极管(S1500)；通过第三接合层将拾取衬底上的微发光二极管接合到接收衬底(S1600)；以及从拾取衬底剥离所述微发光二极管(S1700)。

Description

微发光二极管转移方法及制造方法
技术领域
本发明涉及微发光二极管，更具体地，涉及一种微发光二极管转移方法和用于制造微发光二极管装置的方法。
背景技术
微发光二极管(Micro LED)技术是指在衬底上以高密度集成的微小尺寸的LED阵列。目前，微发光二极管技术正开始发展，工业界正期待有高品质、高产量的微发光二极管产品进入市场。高品质、高产量的微发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。
一直以来，如何向微发光二极管装置的接收衬底转移微发光二极管是本领域技术人员是技术人员试图改进的技术任务。
在现有技术中，通过拾取头来转移微发光二极管。采用拾取头的方式比较复杂，并且在产量和可靠性方面存在问题。
例如，美国专利US 8,333,860B1公开了一种微器件传送头以及向接收衬底传送一个或多个微器件的方法。该专利在此全部引入作为参考。
美国专利US 8,426,227B1公开了一种微发光二极管和一种形成用于向接收衬底传送的微发光二极管阵列的方法。该专利在此全部引入作为参考。
发明内容
本发明的一个目的是提供一种微发光二极管转移的新技术方案。
根据本发明的第一方面，提供了一种微发光二极管转移方法，包括：在承载衬底上涂覆牺牲层，其中，微发光二极管通过第一接合层被接合在承载衬底上；对牺牲层进行构图，以暴露要拾取的微发光二极管；通过第二接合层将要拾取的微发光二极管接合到拾取衬底；通过侧向钻蚀去除牺牲层；从承载衬底剥离要拾取的微发光二极管；通过第三接合层将拾取衬底上的微发光二极管接合到接收衬底；以及从拾取衬底剥离所述微发光二极管。
优选地，第一接合层和第三接合层是焊料层，以及第二接合层是聚合物。
优选地，第一接合层和第三接合层的剥离特性和第二接合层的剥离特性不同。
优选地，第一接合层的熔点低于280℃，以及通过加热从承载衬底剥离要拾取的微发光二极管。
优选地，所述第二接合层是热释放胶带或者是能够被紫外线固化且被激光剥离的膜。
优选地，所述牺牲层是光刻胶，以及通过光刻对所述牺牲层进行构图。
优选地，牺牲层通过蚀刻液被去除。
优选地，微发光二极管的侧面长度是1-100μm。
优选地，拾取衬底的材料包括玻璃、蓝宝石、石英和硅中的一种。
根据本发明的第二方面，提供了一种用于制造微发光二极管装置的方法，包括使用根据本发明的微发光二极管转移方法将微发光二极管转移到微发光二极管装置的接收衬底上。
与现有技术的拾取头技术相比，本发明不需要制造复杂的拾取头，因此，技术方案相对简单。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是根据本发明的实施例的方法的流程图。
图2-15是根据本发明的用于微发光二极管转移的例子的示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
下面，参照附图描述根据本发明的实施例及例子。
图1示出了根据本发明的一个实施例的微发光二极管转移方法的流程图。
如图1所示，在步骤S1100，在承载衬底上涂覆牺牲层，其中，微发光二极管通过第一接合层被接合在承载衬底上。
例如，微发光二极管可以是横向微发光二极管或者垂直微发光二极管。微发光二极管的侧面长度可以是1-100μm。
第一接合层可以是焊料层。焊料可以是具有较低熔点的金属或合金，或者二者的组合。优选地，焊料的熔点低于280℃；更优选地，低于200℃；再优选地，低于160℃。
S1200，对牺牲层进行构图，以暴露要拾取的微发光二极管。
所述牺牲层可以是光刻胶。可以通过光刻对所述牺牲层进行构图。当然，本领域技术人员还可以通过其他方式对牺牲层进行构图。
S1300，通过第二接合层将要拾取的微发光二极管接合到拾取衬底。
拾取衬底的材料可以包括玻璃、蓝宝石、石英或硅中的一种。所述第二接合层可以是热释放胶带或者是能够被紫外线固化且被激光剥离的膜。
S1400，通过侧向钻蚀去除牺牲层。
例如，可以通过化学侧向钻蚀来去除牺牲层。例如，可以使用蚀刻液。蚀刻液例如是诸如丙酮的溶剂。
S1500，从承载衬底剥离要拾取的微发光二极管。
例如，在第一接合层具有较低熔点的情况下，可以通过加热的方式从承载衬底剥离要拾取的微发光二极管。
S1600，通过第三接合层将拾取衬底上的微发光二极管接合到接收衬底。
S1700，从拾取衬底剥离所述微发光二极管。
通过本发明的教导，本领域技术人员很容易明白，在本发明的技术方案本身已经表明了，在剥离第一接合层(承载衬底)时可以将微发光二极管保留在第二接合层(拾取衬底)上，以及在剥离第二接合层(拾取衬底)时可以将微发光二极管保留在第三接合层(接收衬底)上。例如，第一接合层的剥离特性和第二接合层的剥离特性不同，从而可以将微光二极管从承载衬底转移到拾取衬底。而且，第二接合层的剥离特性和第三接合层的剥离特性不同，从而可以将微光二极管从拾取衬底转移到接收衬底。例如，所述剥离特性可以包括剥离温度、剥离方法等等。
例如，可以通过加热从承载衬底剥离微发光二极管，以及通过激光剥离从拾取衬底剥离微发光二极管。
在一个例子中，第一接合层可以是低熔点的焊料层，第二接合层是聚合物层，第三接合层是在接合之后具有较高的熔点的焊料层。在这种情况下，可以通过以第一温度进行加热来剥离第一接合层，以及通过以第二温度进行加热来剥离第二接合层，其中，第一温度小于第二温度。
在一个优选例子中，还可以通过非接触的方式执行所述剥离。例如，在剥离时，通过重力、静电力、磁力中的至少一种，将微发光二极管保留在拾取衬底或接收衬底上。例如，可以通过拾取衬底或接收衬底上的焊垫或接合层来施加静电力。例如，可以从拾取衬底或接收衬底侧施加磁力。
在本发明已经教导单独剥离第一接合层、第二接合层的情况下，这已经足以使得本领域技术人员很容易想到很多种方式来单独剥离所述接合层，即使其中的某些方式可以是具有创造性的。因此，本说明书在此省略对各个具体剥离方式的具体描述。
与现有技术的拾取头技术相比，本发明不需要制造复杂的拾取头，因此，技术方案相对简单。这在一定程度上也可以降低成本。
此外，可以容易地使用拾取衬底(而非拾取头阵列)进行大规模处理。因此，可以通过本发明提高产量。
此外，与拾取头的静电拾取的方式相比，本发明可以在一定程度上提高拾取的可靠性。
在另一个实施例中，本发明还可以包括一种用于制造微发光二极管装置的方法。该制造方法包括使用上述微发光二极管转移方法将微发光二极管转移到微发光二极管装置的接收衬底上。微发光二极管装置例如是显示屏装置，接收衬底例如是显示屏面板或显示衬底。
此外，本发明还可以包括通过所述制造方法制造的微发光二极管装置和/或包括所述微发光二极管装置的电子设备，诸如手机、平板电脑等。
图2-图15示出了根据本发明的用于微发光二极管转移的一个例子。
如图2所示，红色微发光二极管3r通过第一接合层2被接合在承载衬底1上。第一接合层2例如是焊料层或胶带层。微发光二极管可以包括P金属、沟道、介电层等。
如图3所示，在承载衬底1上涂覆牺牲层4。牺牲层4覆盖微发光二极管3r。对牺牲层4进行构图，以暴露要拾取的微发光二极管3r，如图3中的标号5所示。牺牲层4可以是光刻胶，以及可以通过光刻对牺牲层4进行构图。
如图4所示，通过第二接合层6将要拾取的微发光二极管3r接合到拾取衬底7。
第二接合层6的材料可以是接合聚合物。接合聚合物例如可以是能够通过紫外线UV固化并通过激光剥离的膜(诸如商业上可获得的3M LC5320)、热释放胶带、高温UV胶带(例如，Nitto Denko的2面胶带，它可通过紫外线被释放)、或者不同于牺牲层的光刻胶(能用不同的溶剂去除)。
如图5所示，通过侧向钻蚀去除牺牲层4。例如，使用诸如丙酮的溶剂(蚀刻液)来去除牺牲层。
如图6所示，从承载衬底剥离要拾取的微发光二极管。例如，第一接合层2是熔点较低的焊料层。通过加热使得第一接合层2的焊料熔化，然后，提起拾取衬底7，剥离要拾取的微发光二极管。
如图7所示，红色微发光二极管3r通过拾取衬底被拾取。如图8、图9所示，可以重复上面的步骤，以同样的方式拾取绿色微发光二极管3g和蓝色微发光二极管3b。
如图10所示，通过第三接合层9将拾取衬底上的微发光二极管3r接合到接收衬底8。如图11所示，从拾取衬底7剥离所述微发光二极管3r。例如，可以通过激光剥离或热释放等剥离微发光二极管3r。这样，红色微发光二极管3r被转移到接收衬底8。
如图12和图13所示，可以用同样的方式将绿色微发光二极管3g转移到接收衬底8。
如图14和图15所示，可以用同样的方式将蓝色微发光二极管3b转移到接收衬底8。
在一个例子中，为了补偿某些微发光二极管的故障，可以通过冗余技术设置冗余的微发光二极管。这样，当某个微发光二极管出现故障时，可以使用与它对应的冗余的微发光二极管，从而提高显示装置的质量。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (8)

1.一种微发光二极管转移方法，包括：
微发光二极管通过第一接合层被接合在承载衬底上；在承载衬底上涂覆牺牲层，所述牺牲层完全覆盖微发光二极管及其之间的空隙；
对牺牲层进行构图，以暴露要拾取的微发光二极管；
通过第二接合层将要拾取的微发光二极管接合到拾取衬底；
通过侧向钻蚀去除牺牲层；
从承载衬底剥离要拾取的微发光二极管；
通过第三接合层将拾取衬底上的微发光二极管接合到接收衬底；以及
从拾取衬底剥离所述微发光二极管；
第一接合层和第三接合层是焊料层，以及第二接合层是聚合物层；第一接合层和第三接合层的剥离特性和第二接合层的剥离特性不同；
通过冗余技术设置冗余的微发光二极管。
2.根据权利要求1所述的方法，其中，第一接合层的熔点低于280℃，以及通过加热从承载衬底剥离要拾取的微发光二极管。
3.根据权利要求1所述的方法，其中，所述第二接合层是热释放胶带或者是能够被紫外线固化且被激光剥离的膜。
4.根据权利要求1所述的方法，其中，所述牺牲层是光刻胶，以及通过光刻对所述牺牲层进行构图。
5.根据权利要求1所述的方法，其中，牺牲层通过蚀刻液被去除。
6.根据权利要求1所述的方法，其中，微发光二极管的侧面长度是1-100μm。
7.根据权利要求1所述的方法，其中，拾取衬底的材料包括玻璃、蓝宝石、石英和硅中的一种。
8.一种用于制造微发光二极管装置的方法，包括使用根据权利要求1-7中的任一项所述的方法将微发光二极管转移到微发光二极管装置的接收衬底上。
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