CN107146769B - 微发光二极管的转移设备及转移方法 - Google Patents
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Abstract
本发明提供一种微发光二极管的转移设备及转移方法。所述微发光二极管的转移设备包括:本体、设于所述本体上的吐液模块、冷却模块和加热模块,可通过吐液模块向待转移的微发光二极管吐出金属粘附液,通过冷却模块冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移,转移到位后通过加热模块加热固化后的金属粘附液,使得金属粘附液熔化,分离本体和待转移的微发光二极管,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种微发光二极管的转移设备及转移方法。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点,而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品,成为显示装置中的主流。
微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器,同大尺寸的户外LED显示屏一样,每一个像素可定址、单独驱动点亮,可以看成是户外LED显示屏的缩小版,将像素点距离从毫米级降低至微米级,Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode,OLED)显示器一样属于自发光显示器,但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点,被认为是OLED显示器的最大竞争对手。
在微发光二极管显示面板的制作过程中,微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来,而做成显示面板,还必须要把微发光二极管器件原始基板上转移到用于形成显示面板的接收基板上排成显示阵列,具体为:先原始基板上形成微发光二极管,随后通过激光剥离技术(Laser lift-off,LLO)等方法将微发光二极管从原始基板上剥离开,并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)等材料制作的转移头,如将微发光二极管从原始基板上吸附到接收基板上预设的位置。
现有技术中,用于微发光二极管转移的转移头通常是通过静电力吸附微发光二极管来完成微发光二极管转移的,该方法对转移头与被转移对象之间的间隙有着严格要求,若出现转移间隙的偏差,就会导致转移失效而造成显示面板缺陷。
发明内容
本发明的目的在于提供一种微发光二极管的转移设备,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
本发明的目的还在于提供一种微发光二极管的转移方法,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
为实现上述目的,本发明提供了一种微发光二极管的转移设备,包括:本体、设于所述本体上的吐液模块、冷却模块和加热模块;
所述吐液模块用于向待转移的微发光二极管吐出金属粘附液;
所述冷却模块用于冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体和待转移的微发光二极管粘结到一起;
所述加热模块用于加热固化后的金属粘附液,使得金属粘附液熔化,分离本体和待转移的微发光二极管。
所述本体包括:多个依次排列的转移头,每一个转移头的底部均设有吐液口,所述吐液模块通过吐液口向待转移的微发光二极管吐出金属粘附液。
每一对相邻的转移头之间均设有吹气孔,所述冷却模块通过吹气孔向外吹气冷却待转移的微发光二极管上的金属粘附液。
每一个转移头上均设有电阻加热体,所述加热模块通过向电阻加热体通电加热固化后的金属粘附液。
所述吹气孔吹出的气体为氦气。
本发明提供一种微发光二极管的转移方法,包括如下步骤:
步骤S1、提供一转运基板,所述转运基板上设有微发光二极管;
步骤S2、提供一微发光二极管的转移设备,所述微发光二极管的转移设备包括:本体、设于所述本体上的吐液模块、冷却模块和加热模块;
步骤S3、所述吐液模块向微发光二极管上吐出金属粘附液,所述冷却模块冷却所述吐液模块吐出的金属粘附液,使得金属粘附液固化,将本体和微发光二极管粘结到一起;
步骤S4、提供一接收基板,所述微发光二极管的转移设备将所述微发光二极管移动到接收基板上预设的邦定位置,所述加热模块加热所述固化后的金属粘附液,使得金属粘附液熔化,分离本体和微发光二极管,从而将所述微发光二极管转移到接收基板上。
所述本体包括:多个依次排列的转移头,每一个转移头的底部均设有吐液口,所述步骤S3中吐液模块通过吐液口向微发光二极管上吐出金属粘附液。
每一对相邻的转移头之间均设有吹气孔,所述步骤S3中冷却模块通过吹气孔向外吹气冷却吐液模块吐出的金属粘附液。
每一个转移头上均设有电阻加热体,所述步骤S4中加热模块通过向电阻加热体通电加热固化后的金属粘附液。
所述步骤S3中所述吹气孔吹出的气体为氦气。
本发明的有益效果:本发明提供一种微发光二极管的转移设备,所述微发光二极管的转移设备包括:本体、设于所述本体上的吐液模块、冷却模块和加热模块,可通过吐液模块向待转移的微发光二极管吐出金属粘附液,通过冷却模块冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移,转移到位后通过加热模块加热固化后的金属粘附液,使得金属粘附液熔化,分离本体和待转移的微发光二极管,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为本发明的微发光二极管的转移设备的模块示意图;
图2为本发明的微发光二极管的转移设备的结构示意图;
图3至图11为本发明的微发光二极管的转移方法中微发光二极管的制作过程的示意图;
图12为本发明的微发光二极管的转移方法的步骤S1的示意图;
图13为本发明的微发光二极管的转移方法的步骤S3的示意图;
图14为本发明的微发光二极管的转移方法的步骤S4的示意图;
图15为本发明的微发光二极管的转移方法中微发光二极管的封装过程的示意图;
图16为本发明的微发光二极管的转移方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明提供一种微发光二极管的转移设备,包括:本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。
其中,所述吐液模块20用于向待转移的微发光二极管吐出金属粘附液;所述冷却模块30用于冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体10和待转移的微发光二极管粘结到一起;所述加热模块40用于加热固化后的金属粘附液,使得金属粘附液熔化,分离本体10和待转移的微发光二极管。
具体地,如图2所示,所述本体10包括:多个依次排列的转移头101,每一个转移头101的底部均设有吐液口102,所述吐液模块20通过吐液口102向待转移的微发光二极管吐出金属粘附液。进一步地,如图2所示,在每一对相邻的转移头101之间还设有吹气孔103,所述冷却模块30通过吹气孔103向外吹气冷却待转移的微发光二极管上的金属粘附液。如图2所示,每一个转移头101上均设有电阻加热体104,所述加热模块40通过向电阻加热体104通电加热固化后的金属粘附液。
优选地,所述吹气孔103吹出的气体为氦气,所述电阻加热体104的材料为钨,所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。
上述微发光二极管的转移设备,在微发光二极管转移时先将本体10与待转移的微发光二极管通过固化的金属粘附液粘结到一起,在微发光二极管转移完毕后融化金属粘附液使微发光二极管与本体10分离,相较于现有的采用静电力吸附微发光二极管的转移设备,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
请参阅图16,本发明还提供一种微发光二极管的转移方法,包括如下步骤:
步骤S1、请参阅图12,提供一转运基板8,所述转运基板8上设有微发光二极管100。
具体地,所述步骤S1之前还包括一制作并转运所述微发光二极管100至转运基板8上的过程,具体包括:请参阅图3,首先提供一原始基板1,在所述原始基板1上的形成LED半导体薄膜2’,在所述LED半导体薄膜2’上形成图案化的第一光阻层10’;接着,请参阅图4,以所述第一光阻层10’为遮挡,对所述LED半导体薄膜2’进行刻蚀,形成LED半导体层2;然后,请参阅图5和图6,在所述LED半导体层2和原始基板1上覆盖第一绝缘层3,在所述第一绝缘层3上形成图案化的第二光阻层20’;随后,请参阅图7,以第二光阻层20’为遮挡,对所述第一绝缘层3进行刻蚀,形成贯穿所述第二绝缘层3的第一通孔4和第二通孔5,所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分;接着,请参阅图8和图9,在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’,在所述第一金属薄膜6’上形成图案化的第三光阻层30’;接着,请参阅图10,以第三光阻层30’为遮挡,对所述第一金属薄膜6’进行刻蚀,形成底电极6,所述底电极6通过第一通孔4与LED半导体层2接触,制得微发光二极管100,最后,请参阅图11,提供一转运基板8,将所述转运基板8表面与底电极6粘合,剥离所述原始基板1,使得微发光二极管100转移到转运基板8上,暴露出所述LED半导体层2与原始基板1接触的一侧表面。
进一步地,所述微发光二极管100为未进行封装的半成品,所述原始基板1可以蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等,所述LED半导体层2包括:N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。
具体地,所述转运基板8为表面设有粘合层的硬质基板,通过所述硬质基板表面的粘合层粘合底电极6,使得底电极6与转运基板8相连,再通过激光剥离工艺去除原始基板1,使得微发光二极管100转移到转运基板8上,且所述微发光二极管100上下倒转,也即所述LED半导体层2与所述原始基板1接触的一侧表面远离所述转运基板8,以暴露出LED半导体层2与原始基板1接触的一侧表面。
步骤S2、请参阅图1,提供一微发光二极管的转移设备,所述微发光二极管的转移设备包括:本体10、设于所述本体10上的吐液模块20、冷却模块30和加热模块40。
具体地,如图2所示,所述本体10包括:多个依次排列的转移头101,每一个转移头101的底部均设有吐液口102,每一对相邻的两转移头101之间均设有吹气孔103,每一个转移头101上均设有电阻加热体104。
步骤S3、如图13所示,所述吐液模块20向微发光二极管100上吐出金属粘附液,所述冷却模块30冷却所述吐液模块20吐出的金属粘附液,使得金属粘附液固化,将本体10和微发光二极管100粘结到一起。
具体地,所述步骤S3具体包括:首先将所述微发光二极管的转移设备移动到所述微发光二极管100上方0至2微米的位置,随后所述吐液模块20通过吐液口102向所述微发光二极管100的LED半导体层2上吐出金属粘附液,接着,所述吹气孔103向外吹气,使得金属粘附液固化,将本体10和微发光二极管100粘结到一起。优选地,所述吹气孔103向外吹出的气体为氦气(He)。
优选地,所述金属粘附液可选择铟(In)、镓(Ga)、铅(Pb)、及锡(Sn)等低熔点金属及其合金。
步骤S4、如图14所示,提供一接收基板400,所述微发光二极管的转移设备将所述微发光二极管100移动到接收基板400上预设的邦定位置,所述加热模块40加热所述固化后的金属粘附液,使得金属粘附液熔化,分离本体10和微发光二极管100,从而将所述微发光二极管100转移到接收基板400上。
具体地,如图14所示,所述接收基板400包括:衬底基板41、设于所述衬底基板41上的像素定义层42、形成于所述像素定义层42中的像素凹槽15、设于所述像素凹槽15底部的底电极触点43、设于所述像素凹槽15一侧的像素定义层42上的顶电极触点44。当然所述接收基板400还可以包括薄膜晶体管等驱动器件,这些都可以采用现有技术,此处不再赘述。
具体地,所述步骤S4具体包括:先将所述微发光二极管100移动到像素凹槽15内的底电极触点43上,随后所述加热模块40向所述电阻加热体104通电,使得电阻加热体104温度上升,加热所述固化后的金属粘附液,使金属粘附液熔化,分离本体10和微发光二极管100,所述底电极6与底电极触点43邦定到一起。优选地,所述电阻加热体104的材料为钨。
具体地,所述底电极6与底电极触点43邦定的过程为,在底电极6与底电极触点43接触时与先加热熔化所述底电极触点43,随后再冷却固化所述底电极触点43,进而将所述底电极6与底电极触点43邦定到一起。优选地,所述底电极触点43的材料为铅或锡等低熔点金属。
进一步地,所述微发光二极管100转移到接收基板400上还需要对所述微发光二极管100进行封装,所述封装过程具体包括:请参阅图15,首先,在所述像素定义层42之间填充封装胶材7,使得封装胶材7的上表面与所述像素定义层42平齐,接着在所述微发光二极管100、像素定义层42、封装胶材7和顶电极触点44上沉积导电薄膜,然后对所述导电薄膜进行图案化,得到与所述LED半导体层2和顶电极触点44接触的顶电极8,最后在所述顶电极8、像素定义层42和封装胶材7上形成保护层9。
具体地,所述顶电极8为透明电极,材料为氧化铟锡(ITO)、氧化铟锌(IZO)、银纳米线、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT:PSS)等。所述保护层9不仅具有保护功能,同时还具有辅助散热和光提取的功能。
上述微发光二极管的转移方法,采用包括本体10、吐液模块20、冷却模块30、加热模块40的微发光二极管的转移设备对微发光二极管100进行转移,在微发光二极管100转移时先将本体10与微发光二极管100通过固化的金属粘附液粘结到一起,在微发光二极管100转移至接收基板400后融化金属粘附液使微发光二极管100与本体10分离,相较于现有的采用静电力吸附微发光二极管对其进行转移的方法,能够降低微发光二极管100的转移难度,提升微发光二极管100的转移效率。
综上所述,本发明提供一种微发光二极管的转移设备,所述微发光二极管的转移设备包括:本体、设于所述本体上的吐液模块、冷却模块和加热模块,可通过吐液模块向待转移的微发光二极管吐出金属粘附液,通过冷却模块冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体和待转移的微发光二极管粘结到一起进行微发光二极管的转移,转移到位后通过加热模块加热固化后的金属粘附液,使得金属粘附液熔化,分离本体和待转移的微发光二极管,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。本发明还提供一种微发光二极管的转移方法,能够降低微发光二极管的转移难度,提升微发光二极管的转移效率。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种微发光二极管的转移设备,其特征在于,包括:本体(10)、设于所述本体(10)上的吐液模块(20)、冷却模块(30)和加热模块(40);
所述吐液模块(20)用于向待转移的微发光二极管吐出金属粘附液;
所述冷却模块(30)用于冷却待转移的微发光二极管上的金属粘附液,使得金属粘附液固化,将本体(10)和待转移的微发光二极管粘结到一起;
所述加热模块(40)用于加热固化后的金属粘附液,使得金属粘附液熔化,分离本体(10)和待转移的微发光二极管;
所述金属粘附液为低熔点金属的粘附液。
2.如权利要求1所述的微发光二极管的转移设备,其特征在于,所述本体(10)包括:多个依次排列的转移头(101),每一个转移头(101)的底部均设有吐液口(102),所述吐液模块(20)通过吐液口(102)向待转移的微发光二极管吐出金属粘附液。
3.如权利要求2所述的微发光二极管的转移设备,其特征在于,每一对相邻的转移头(101)之间均设有吹气孔(103),所述冷却模块(30)通过吹气孔(103)向外吹气冷却待转移的微发光二极管上的金属粘附液。
4.如权利要求2所述的微发光二极管的转移设备,其特征在于,每一个转移头(101)上均设有电阻加热体(104),所述加热模块(40)通过向电阻加热体(104)通电加热固化后的金属粘附液。
5.如权利要求3所述的微发光二极管的转移设备,其特征在于,所述吹气孔(103)吹出的气体为氦气。
6.一种微发光二极管的转移方法,其特征在于,包括如下步骤:
步骤S1、提供一转运基板(8),所述转运基板(8)上设有微发光二极管(100);
步骤S2、提供一微发光二极管的转移设备,所述微发光二极管的转移设备包括:本体(10)、设于所述本体(10)上的吐液模块(20)、冷却模块(30)和加热模块(40);
步骤S3、所述吐液模块(20)向微发光二极管(100)上吐出金属粘附液,所述冷却模块(30)冷却所述吐液模块(20)吐出的金属粘附液,使得金属粘附液固化,将本体(10)和微发光二极管(100)粘结到一起;
步骤S4、提供一接收基板(400),所述微发光二极管的转移设备将所述微发光二极管(100)移动到接收基板(400)上预设的邦定位置,所述加热模块(40)加热所述固化后的金属粘附液,使得金属粘附液熔化,分离本体(10)和微发光二极管(100),从而将所述微发光二极管(100)转移到接收基板(400)上;
所述金属粘附液为低熔点金属的粘附液。
7.如权利要求6所述的微发光二极管的转移方法,其特征在于,所述本体(10)包括:多个依次排列的转移头(101),每一个转移头(101)的底部均设有吐液口(102),所述步骤S3中吐液模块(20)通过吐液口(102)向微发光二极管(100)上吐出金属粘附液。
8.如权利要求7所述的微发光二极管的转移方法,其特征在于,每一对相邻的转移头(101)之间均设有吹气孔(103),所述步骤S3中冷却模块(30)通过吹气孔(103)向外吹气冷却吐液模块(20)吐出的金属粘附液。
9.如权利要求7所述的微发光二极管的转移方法,其特征在于,每一个转移头(101)上均设有电阻加热体(104),所述步骤S4中加热模块(40)通过向电阻加热体(104)通电加热固化后的金属粘附液。
10.如权利要求8所述的微发光二极管的转移方法,其特征在于,所述步骤S3中所述吹气孔(103)吹出的气体为氦气。
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US11756810B1 (en) * | 2019-12-27 | 2023-09-12 | Meta Platforms Technologies, Llc | Detection of force applied by pick-up tool for transferring semiconductor devices |
WO2022000215A1 (zh) * | 2020-06-29 | 2022-01-06 | 重庆康佳光电技术研究院有限公司 | 微流控芯片、转移头及其制作方法、制作系统 |
CN112967978B (zh) * | 2020-06-29 | 2022-10-21 | 重庆康佳光电技术研究院有限公司 | 转移头及芯片转移系统 |
CN113937200B (zh) * | 2020-07-13 | 2023-05-12 | 重庆康佳光电技术研究院有限公司 | 目标芯片的焊接方法和系统、存储介质 |
CN112992721B (zh) * | 2020-07-22 | 2022-05-31 | 重庆康佳光电技术研究院有限公司 | 微发光二极管的巨量转移方法和巨量转移装置 |
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