DE60201147D1 - Verfahren zur Herstellung eines organischen Dünnfilmbauelements unter Verwendung einer Sputtervorrichtung des Typs der einander gegenüberliegenden Targets - Google Patents
Verfahren zur Herstellung eines organischen Dünnfilmbauelements unter Verwendung einer Sputtervorrichtung des Typs der einander gegenüberliegenden TargetsInfo
- Publication number
- DE60201147D1 DE60201147D1 DE60201147T DE60201147T DE60201147D1 DE 60201147 D1 DE60201147 D1 DE 60201147D1 DE 60201147 T DE60201147 T DE 60201147T DE 60201147 T DE60201147 T DE 60201147T DE 60201147 D1 DE60201147 D1 DE 60201147D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- type
- organic thin
- opposing targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001142672A JP3955744B2 (ja) | 2001-05-14 | 2001-05-14 | 有機薄膜素子の製造方法 |
JP2001142672 | 2001-05-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60201147D1 true DE60201147D1 (de) | 2004-10-14 |
DE60201147T2 DE60201147T2 (de) | 2005-01-27 |
Family
ID=18988936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60201147T Expired - Lifetime DE60201147T2 (de) | 2001-05-14 | 2002-05-14 | Verfahren zur Herstellung eines organischen Dünnfilmbauelements unter Verwendung einer Sputtervorrichtung des Typs der einander gegenüberliegenden Targets |
Country Status (7)
Country | Link |
---|---|
US (1) | US6794278B2 (de) |
EP (1) | EP1261042B1 (de) |
JP (1) | JP3955744B2 (de) |
KR (1) | KR100629370B1 (de) |
CN (1) | CN1281783C (de) |
DE (1) | DE60201147T2 (de) |
TW (1) | TW593721B (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4514841B2 (ja) | 1998-02-17 | 2010-07-28 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
SG176316A1 (en) | 2001-12-05 | 2011-12-29 | Semiconductor Energy Lab | Organic semiconductor element |
TWI272874B (en) * | 2002-08-09 | 2007-02-01 | Semiconductor Energy Lab | Organic electroluminescent device |
AU2003289419A1 (en) * | 2002-12-18 | 2004-07-09 | Sony Chemicals Corp. | Transparent conductive film and film forming method therefor |
KR101156971B1 (ko) | 2003-01-29 | 2012-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
JP4745601B2 (ja) * | 2003-03-20 | 2011-08-10 | 広栄化学工業株式会社 | トリアジン化合物およびこれを用いてなる有機電界発光素子 |
JP3965479B2 (ja) * | 2003-07-28 | 2007-08-29 | 株式会社エフ・ティ・エスコーポレーション | 箱型対向ターゲット式スパッタ装置及び化合物薄膜の製造方法 |
US7511421B2 (en) * | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
US7291967B2 (en) | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
JP4723213B2 (ja) * | 2003-08-29 | 2011-07-13 | 株式会社半導体エネルギー研究所 | 発光素子の作製方法 |
US7732808B2 (en) | 2003-09-26 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd | Light-emitting device and method for manufacturing the same |
EP2276088B1 (de) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Lichtemittierendes Element, und lichtemittierende Vorrichtung mit dem lichtemittierenden Element |
JP4476594B2 (ja) | 2003-10-17 | 2010-06-09 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP4683829B2 (ja) | 2003-10-17 | 2011-05-18 | 淳二 城戸 | 有機エレクトロルミネッセント素子及びその製造方法 |
US7902747B2 (en) * | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
JP4243237B2 (ja) | 2003-11-10 | 2009-03-25 | 淳二 城戸 | 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法 |
CN100551187C (zh) | 2003-12-26 | 2009-10-14 | 株式会社半导体能源研究所 | 发光元件 |
JP4175273B2 (ja) | 2004-03-03 | 2008-11-05 | セイコーエプソン株式会社 | 積層型有機エレクトロルミネッセンス素子の製造方法及び表示装置 |
KR100880343B1 (ko) * | 2004-03-19 | 2009-01-28 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 유기 발광 소자용 전극막 형성 방법 |
JP2006040580A (ja) * | 2004-07-22 | 2006-02-09 | Ams:Kk | 有機el素子の製法 |
JP2006295104A (ja) | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | 発光素子およびそれを用いた発光装置 |
CN101841002B (zh) * | 2004-09-24 | 2011-11-16 | 株式会社半导体能源研究所 | 发光器件 |
KR101436791B1 (ko) | 2004-10-29 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 재료, 발광 소자, 발광 장치 및 이의 제조방법 |
KR100810629B1 (ko) * | 2004-12-08 | 2008-03-06 | 삼성에스디아이 주식회사 | 대향 타겟식 스퍼터링 장치를 이용한 유기 발광 소자의제조방법 |
JP4712372B2 (ja) * | 2004-12-16 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN1800441B (zh) * | 2005-01-05 | 2010-09-01 | 鸿富锦精密工业(深圳)有限公司 | 等离子体增强薄膜沉积方法及装置 |
US8026531B2 (en) * | 2005-03-22 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8420227B2 (en) | 2005-03-23 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100685832B1 (ko) * | 2005-05-13 | 2007-02-22 | 삼성에스디아이 주식회사 | 무기막 및 그의 제조 방법 |
EP1724852A3 (de) | 2005-05-20 | 2010-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierendes Bauelement, lichtemittierende Vorrichtung, und elektronische Vorrichtung |
JP4596977B2 (ja) * | 2005-05-20 | 2010-12-15 | 株式会社 日立ディスプレイズ | 有機発光表示装置 |
US8334057B2 (en) | 2005-06-08 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US7745989B2 (en) | 2005-06-30 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Light emitting element, light emitting device, and electronic apparatus |
US8288180B2 (en) | 2005-07-04 | 2012-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light emitting device |
KR20070030620A (ko) * | 2005-09-13 | 2007-03-16 | 삼성에스디아이 주식회사 | 전극 증착방법 및 이로써 제조된 유기 발광 표시장치 |
JP2007179797A (ja) * | 2005-12-27 | 2007-07-12 | Tokyo Electron Ltd | 成膜装置および発光素子の製造方法 |
US7528418B2 (en) * | 2006-02-24 | 2009-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP5051869B2 (ja) * | 2006-06-14 | 2012-10-17 | 東京エレクトロン株式会社 | 発光素子および発光素子の製造方法 |
JP5196764B2 (ja) * | 2006-11-17 | 2013-05-15 | キヤノン株式会社 | 有機el素子及びその製造方法 |
ITMI20070301A1 (it) * | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
KR100914038B1 (ko) * | 2007-06-04 | 2009-08-28 | 주식회사 탑 엔지니어링 | 이중 타깃 스퍼터링 장치 |
JP2009037813A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | 有機el装置の製造方法 |
JP2010055926A (ja) * | 2008-08-28 | 2010-03-11 | Yamagata Promotional Organization For Industrial Technology | 有機エレクトロルミネッセンス素子およびその製造方法 |
JP2010153365A (ja) | 2008-11-19 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器及び照明装置 |
US8404500B2 (en) | 2009-11-02 | 2013-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance |
JP2011243441A (ja) * | 2010-05-19 | 2011-12-01 | Nec Lighting Ltd | 有機el装置 |
JP5969216B2 (ja) | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、照明装置、及びこれらの作製方法 |
JP2012186158A (ja) | 2011-02-14 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 照明装置及び発光装置の作製方法及び製造装置 |
JP5889730B2 (ja) | 2012-06-27 | 2016-03-22 | Lumiotec株式会社 | 有機エレクトロルミネッセント素子及び照明装置 |
CN106086797B (zh) * | 2016-07-12 | 2018-12-11 | 京东方科技集团股份有限公司 | 氧化铟锡薄膜及其制备方法、含其的阵列基板、显示装置 |
US10254170B2 (en) * | 2017-08-08 | 2019-04-09 | The United States of America, as Represented by the Secretary of Homeland Security | Contrast phantoms and uses thereof for active millimeter wave imaging systems |
US10267904B2 (en) * | 2017-08-08 | 2019-04-23 | The United States of America, as Represented by the Secretary of Homeland Security | Artificial skin and human phantom for use in active millimeter wave imaging systems |
KR102397844B1 (ko) * | 2019-11-13 | 2022-05-13 | 주식회사 에스제이컴퍼니 | 투명 산화물 전극을 형성하기 위한 스퍼터링 방법 및 이에 의해 제조된 투명 산화물 전극 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57158380A (en) * | 1981-03-26 | 1982-09-30 | Teijin Ltd | Counter target type sputtering device |
JPS5855566A (ja) * | 1981-09-29 | 1983-04-01 | Teijin Ltd | 対向タ−ゲツト式スパツタ装置 |
JPH06103376B2 (ja) | 1985-07-12 | 1994-12-14 | ミノルタ株式会社 | 画像投影装置 |
JPH0625215B2 (ja) | 1986-07-14 | 1994-04-06 | 株式会社日本触媒 | 変性されたアミン化合物の製造方法 |
JPH0686487B2 (ja) | 1986-07-15 | 1994-11-02 | 東ソー株式会社 | クロロスルホン化ポリエチレン |
JPS63270461A (ja) | 1986-12-26 | 1988-11-08 | Teijin Ltd | 対向ターゲット式スパッタ装置 |
JP2814007B2 (ja) | 1990-04-27 | 1998-10-22 | 戸田工業株式会社 | 無機物粒子含有エポキシ樹脂粒状物粉体及びその製造法 |
JPH0575827A (ja) | 1991-09-12 | 1993-03-26 | Nec Corp | フアクシミリ装置 |
JPH05315075A (ja) * | 1992-05-07 | 1993-11-26 | Fuji Electric Co Ltd | エレクトロルミネッセンス発光膜の成膜方法 |
GB9324505D0 (en) * | 1992-12-07 | 1994-01-19 | Fuji Electric Co Ltd | Method for preparing thin-film electro-luminescence element |
JPH08250284A (ja) | 1995-03-07 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 有機エレクトロルミネッセンス素子及びその作製方法 |
JP3807684B2 (ja) | 1996-06-24 | 2006-08-09 | 貞夫 門倉 | スパッタ方法及びスパッタ装置 |
JPH10270171A (ja) | 1997-01-27 | 1998-10-09 | Junji Kido | 有機エレクトロルミネッセント素子 |
JPH10255987A (ja) | 1997-03-11 | 1998-09-25 | Tdk Corp | 有機el素子の製造方法 |
JP3886209B2 (ja) * | 1997-06-02 | 2007-02-28 | 貞夫 門倉 | 対向ターゲット式スパッタ装置 |
JP4097893B2 (ja) * | 2000-12-05 | 2008-06-11 | 株式会社エフ・ティ・エスコーポレーション | 対向ターゲット式スパッタ方法及び導電性膜の形成方法 |
-
2001
- 2001-05-14 JP JP2001142672A patent/JP3955744B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-02 KR KR1020020017987A patent/KR100629370B1/ko active IP Right Grant
- 2002-04-08 CN CNB021061688A patent/CN1281783C/zh not_active Expired - Lifetime
- 2002-04-09 US US10/118,022 patent/US6794278B2/en not_active Expired - Lifetime
- 2002-04-30 TW TW091108957A patent/TW593721B/zh not_active IP Right Cessation
- 2002-05-14 EP EP02010188A patent/EP1261042B1/de not_active Expired - Lifetime
- 2002-05-14 DE DE60201147T patent/DE60201147T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020173068A1 (en) | 2002-11-21 |
US6794278B2 (en) | 2004-09-21 |
TW593721B (en) | 2004-06-21 |
KR20020087839A (ko) | 2002-11-23 |
DE60201147T2 (de) | 2005-01-27 |
KR100629370B1 (ko) | 2006-09-29 |
JP2002332567A (ja) | 2002-11-22 |
CN1386895A (zh) | 2002-12-25 |
CN1281783C (zh) | 2006-10-25 |
EP1261042B1 (de) | 2004-09-08 |
EP1261042A1 (de) | 2002-11-27 |
JP3955744B2 (ja) | 2007-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KIDO, JUNJI, YONEZAWA-SHI, YAMAGATA-KEN, JP Owner name: ROHM CO., LTD., KYOTO, KYOTO, JP |