DE602008002574D1 - Leitfähige dickschichtzusammensetzung und verfahren zu ihrer verwendung bei der herstellung von halbleiterbauelementen - Google Patents

Leitfähige dickschichtzusammensetzung und verfahren zu ihrer verwendung bei der herstellung von halbleiterbauelementen

Info

Publication number
DE602008002574D1
DE602008002574D1 DE602008002574T DE602008002574T DE602008002574D1 DE 602008002574 D1 DE602008002574 D1 DE 602008002574D1 DE 602008002574 T DE602008002574 T DE 602008002574T DE 602008002574 T DE602008002574 T DE 602008002574T DE 602008002574 D1 DE602008002574 D1 DE 602008002574D1
Authority
DE
Germany
Prior art keywords
mol
manufacture
layer composition
semiconductor components
conductive thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008002574T
Other languages
English (en)
Inventor
Takuya Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of DE602008002574D1 publication Critical patent/DE602008002574D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Glass Compositions (AREA)
DE602008002574T 2007-04-12 2008-04-09 Leitfähige dickschichtzusammensetzung und verfahren zu ihrer verwendung bei der herstellung von halbleiterbauelementen Active DE602008002574D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/786,717 US7731868B2 (en) 2007-04-12 2007-04-12 Thick film conductive composition and process for use in the manufacture of semiconductor device
PCT/US2008/004657 WO2008127624A1 (en) 2007-04-12 2008-04-09 Thick film conductive composition and processes for use in the manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
DE602008002574D1 true DE602008002574D1 (de) 2010-10-28

Family

ID=39573723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008002574T Active DE602008002574D1 (de) 2007-04-12 2008-04-09 Leitfähige dickschichtzusammensetzung und verfahren zu ihrer verwendung bei der herstellung von halbleiterbauelementen

Country Status (8)

Country Link
US (1) US7731868B2 (de)
EP (1) EP2135294B1 (de)
JP (1) JP2010524257A (de)
KR (1) KR101086183B1 (de)
CN (1) CN101641796B (de)
AT (1) ATE481737T1 (de)
DE (1) DE602008002574D1 (de)
WO (1) WO2008127624A1 (de)

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GB0307547D0 (en) * 2003-04-01 2003-05-07 Du Pont Conductor composition V
US8383011B2 (en) * 2008-01-30 2013-02-26 Basf Se Conductive inks with metallo-organic modifiers
DE102008036837A1 (de) * 2008-08-07 2010-02-18 Epcos Ag Sensorvorrichtung und Verfahren zur Herstellung
DE102008037613A1 (de) * 2008-11-28 2010-06-02 Schott Solar Ag Verfahren zur Herstellung eines Metallkontakts
TW201025622A (en) 2008-12-17 2010-07-01 Ind Tech Res Inst Electrode for solar cell and fabricating method thereof
JP5293348B2 (ja) * 2009-03-31 2013-09-18 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
US20100269893A1 (en) * 2009-04-23 2010-10-28 E. I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces
TW201043359A (en) * 2009-05-01 2010-12-16 Du Pont Silver particles and a process for making them
US8231704B2 (en) * 2009-05-01 2012-07-31 E I Du Pont De Nemours And Company Silver particles and processes for making them
CN102428148A (zh) * 2009-05-20 2012-04-25 纳幕尔杜邦公司 相变油墨组合物
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
CN102123961A (zh) 2009-08-07 2011-07-13 Lg化学株式会社 制备硅太阳能电池的无铅玻璃料粉末、其制备方法、包含其的金属膏组合物和硅太阳能电池
US20110048527A1 (en) * 2009-08-25 2011-03-03 E.I. Du Pont De Nemours And Company Silver thick film paste compositions and their use in conductors for photovoltaic cells
JP2011144726A (ja) 2010-01-13 2011-07-28 Suzuki Motor Corp 内燃機関の制御装置
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5540810B2 (ja) * 2010-03-24 2014-07-02 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
JP5540811B2 (ja) * 2010-03-24 2014-07-02 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
CN109014180B (zh) * 2010-05-04 2021-08-24 太阳帕斯特有限责任公司 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途
US8366799B2 (en) 2010-08-30 2013-02-05 E I Du Pont De Nemours And Company Silver particles and a process for making them
KR101428131B1 (ko) * 2010-10-28 2014-08-07 엘지이노텍 주식회사 전도성 페이스트 조성물
KR101199194B1 (ko) 2010-10-28 2012-11-07 엘지이노텍 주식회사 태양 전지의 전면 전극용 페이스트 조성물 및 태양 전지
US8574338B2 (en) 2010-11-17 2013-11-05 E I Du Pont De Nemours And Company Reactor and continuous process for producing silver powders
US9039942B2 (en) 2011-12-21 2015-05-26 E I Du Pont De Nemours And Company Lead-free conductive paste composition and semiconductor devices made therewith
EP2607327A1 (de) * 2011-12-23 2013-06-26 Heraeus Precious Metals GmbH & Co. KG Dickfilmzusammensetzung mit Antimonoxid und ihre Verwendung bei der Herstellung von Halbleiterbauelementen
US9240515B2 (en) 2013-11-25 2016-01-19 E I Du Pont De Nemours And Company Method of manufacturing a solar cell
CN105321594B (zh) * 2015-02-26 2017-04-26 深圳市春仰科技有限公司 一种硅太阳能电池正面银浆及其制备方法
US10636540B2 (en) 2015-03-27 2020-04-28 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising an oxide additive
US10056508B2 (en) 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
JP6624930B2 (ja) 2015-12-26 2019-12-25 日亜化学工業株式会社 発光素子及びその製造方法
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
CN107068238A (zh) * 2016-12-09 2017-08-18 东莞珂洛赫慕电子材料科技有限公司 一种铝合金基板用厚膜电路中温烧结全银电极浆料及其制备方法
CN107274959A (zh) * 2017-05-03 2017-10-20 陶志斌 无机导电端头膜及其制备方法

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Publication number Priority date Publication date Assignee Title
US4256513A (en) 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
JPS6249676A (ja) 1985-08-29 1987-03-04 Sharp Corp 太陽電池
EP0234338A1 (de) * 1986-02-13 1987-09-02 W.C. Heraeus GmbH Ein Antrag gemäss Regel 88 EPÜ auf Berichtigung der Beschreibungsseite 22, Zeile 3 liegt vor. Über diesen Antrag wird im Laufe des Verfahrens von der Prüfungsabteilung eine Entscheidung getroffen werden
JP3152065B2 (ja) * 1994-06-20 2001-04-03 株式会社村田製作所 導電性ペーストおよび積層セラミックコンデンサ
JP3209089B2 (ja) * 1996-05-09 2001-09-17 昭栄化学工業株式会社 導電性ペースト
JP2001118425A (ja) * 1999-10-21 2001-04-27 Murata Mfg Co Ltd 導電性ペースト
JP2001243836A (ja) 1999-12-21 2001-09-07 Murata Mfg Co Ltd 導電性ペースト及びそれを用いた印刷配線板
JP2001313400A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 太陽電池素子の形成方法
JP2003077336A (ja) * 2001-08-30 2003-03-14 Kyocera Corp 導電性ペースト及びこれを用いた積層セラミックコンデンサ
JP4103672B2 (ja) 2003-04-28 2008-06-18 株式会社村田製作所 導電性ペーストおよびガラス回路構造物
JP2005019185A (ja) * 2003-06-26 2005-01-20 Murata Mfg Co Ltd 銅導電性ペーストおよび積層セラミック電子部品
JP4432604B2 (ja) * 2004-04-30 2010-03-17 昭栄化学工業株式会社 導電性ペースト
JP5060722B2 (ja) * 2004-11-10 2012-10-31 日立粉末冶金株式会社 電子放出源形成用組成物及び電子放出源用被膜の形成方法
CN1881482A (zh) * 2005-03-09 2006-12-20 E.I.内穆尔杜邦公司 黑导电厚膜组合物,黑电极及其制造方法
US7435361B2 (en) * 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US7326367B2 (en) 2005-04-25 2008-02-05 E.I. Du Pont De Nemours And Company Thick film conductor paste compositions for LTCC tape in microwave applications
US8093491B2 (en) 2005-06-03 2012-01-10 Ferro Corporation Lead free solar cell contacts
JP4182174B2 (ja) * 2006-03-07 2008-11-19 株式会社村田製作所 導電性ペースト及び太陽電池

Also Published As

Publication number Publication date
EP2135294B1 (de) 2010-09-15
JP2010524257A (ja) 2010-07-15
CN101641796A (zh) 2010-02-03
ATE481737T1 (de) 2010-10-15
US20080254567A1 (en) 2008-10-16
EP2135294A1 (de) 2009-12-23
WO2008127624A1 (en) 2008-10-23
US7731868B2 (en) 2010-06-08
KR20100005121A (ko) 2010-01-13
KR101086183B1 (ko) 2011-11-25
CN101641796B (zh) 2011-03-16

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