DE602006008596D1 - Verwendung von datensperren bei der mehrphasigen programmierung nicht-flüchtiger speicher - Google Patents

Verwendung von datensperren bei der mehrphasigen programmierung nicht-flüchtiger speicher

Info

Publication number
DE602006008596D1
DE602006008596D1 DE602006008596T DE602006008596T DE602006008596D1 DE 602006008596 D1 DE602006008596 D1 DE 602006008596D1 DE 602006008596 T DE602006008596 T DE 602006008596T DE 602006008596 T DE602006008596 T DE 602006008596T DE 602006008596 D1 DE602006008596 D1 DE 602006008596D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory cells
selected memory
data labels
programming non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006008596T
Other languages
English (en)
Inventor
Yan Li
Raul-Adrian Cernea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602006008596D1 publication Critical patent/DE602006008596D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Read Only Memory (AREA)
DE602006008596T 2005-04-01 2006-03-27 Verwendung von datensperren bei der mehrphasigen programmierung nicht-flüchtiger speicher Active DE602006008596D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/097,517 US7158421B2 (en) 2005-04-01 2005-04-01 Use of data latches in multi-phase programming of non-volatile memories
PCT/US2006/011032 WO2006107633A1 (en) 2005-04-01 2006-03-27 Use of data latches in multi-phase programming of non-volatile memories

Publications (1)

Publication Number Publication Date
DE602006008596D1 true DE602006008596D1 (de) 2009-10-01

Family

ID=36619588

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006008596T Active DE602006008596D1 (de) 2005-04-01 2006-03-27 Verwendung von datensperren bei der mehrphasigen programmierung nicht-flüchtiger speicher

Country Status (9)

Country Link
US (2) US7158421B2 (de)
EP (1) EP1869681B1 (de)
JP (1) JP5043827B2 (de)
KR (1) KR101106976B1 (de)
CN (1) CN100590743C (de)
AT (1) ATE440367T1 (de)
DE (1) DE602006008596D1 (de)
TW (1) TWI433158B (de)
WO (1) WO2006107633A1 (de)

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US20060221697A1 (en) 2006-10-05
US20070097744A1 (en) 2007-05-03
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US7508721B2 (en) 2009-03-24
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US7158421B2 (en) 2007-01-02
EP1869681B1 (de) 2009-08-19
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WO2006107633A1 (en) 2006-10-12
JP2008535138A (ja) 2008-08-28

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