DE602006007099D1 - Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen - Google Patents

Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen

Info

Publication number
DE602006007099D1
DE602006007099D1 DE602006007099T DE602006007099T DE602006007099D1 DE 602006007099 D1 DE602006007099 D1 DE 602006007099D1 DE 602006007099 T DE602006007099 T DE 602006007099T DE 602006007099 T DE602006007099 T DE 602006007099T DE 602006007099 D1 DE602006007099 D1 DE 602006007099D1
Authority
DE
Germany
Prior art keywords
magnetic
movement
storage device
domains
magnetic storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006007099T
Other languages
English (en)
Inventor
Tae-Wan Kim
Young-Jin Cho
Kee-Won Kim
In-Jun Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602006007099D1 publication Critical patent/DE602006007099D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
DE602006007099T 2006-02-22 2006-10-30 Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen Active DE602006007099D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060017238A KR100754397B1 (ko) 2006-02-22 2006-02-22 마그네틱 도메인 이동을 이용한 자기메모리

Publications (1)

Publication Number Publication Date
DE602006007099D1 true DE602006007099D1 (de) 2009-07-16

Family

ID=37807890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006007099T Active DE602006007099D1 (de) 2006-02-22 2006-10-30 Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen

Country Status (6)

Country Link
US (1) US7738278B2 (de)
EP (1) EP1826773B1 (de)
JP (1) JP5300201B2 (de)
KR (1) KR100754397B1 (de)
CN (1) CN101026001B (de)
DE (1) DE602006007099D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100834811B1 (ko) * 2006-11-28 2008-06-09 고려대학교 산학협력단 수직 자기 이방성을 가지는 코발트-철-실리콘-보론/플래티늄 다층박막
KR101435516B1 (ko) * 2008-02-14 2014-08-29 삼성전자주식회사 자구벽 이동을 이용한 정보저장장치 및 그 동작방법
KR20090125378A (ko) * 2008-06-02 2009-12-07 삼성전자주식회사 메모리 장치 및 이를 포함하는 데이터 저장 장치
KR101430170B1 (ko) * 2008-06-16 2014-08-13 삼성전자주식회사 자구벽 이동을 이용한 정보저장장치의 구동방법
JP2010010605A (ja) * 2008-06-30 2010-01-14 Fujitsu Ltd 磁気メモリ素子、磁気メモリ装置およびメモリ素子製造方法
TWI416529B (zh) * 2008-09-26 2013-11-21 Ind Tech Res Inst 磁性移位暫存記憶體以及操作方法
GB2465370A (en) * 2008-11-13 2010-05-19 Ingenia Holdings Magnetic data storage comprising a synthetic anti-ferromagnetic stack arranged to maintain solitons
KR20100068791A (ko) 2008-12-15 2010-06-24 삼성전자주식회사 자성트랙, 자성트랙을 포함하는 정보저장장치 및 상기 정보저장장치의 동작방법
KR20100075203A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 정보저장장치 및 그의 동작방법
US8559214B2 (en) 2008-12-25 2013-10-15 Nec Corporation Magnetic memory device and magnetic random access memory
WO2010074130A1 (ja) * 2008-12-25 2010-07-01 日本電気株式会社 磁気メモリ素子及び磁気ランダムアクセスメモリ
US8406029B2 (en) 2009-02-17 2013-03-26 Samsung Electronics Co., Ltd. Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
US8050074B2 (en) * 2009-02-17 2011-11-01 Samsung Electronics Co., Ltd. Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
KR20100104044A (ko) 2009-03-16 2010-09-29 삼성전자주식회사 정보저장장치 및 그의 동작방법
US7965543B2 (en) * 2009-04-30 2011-06-21 Everspin Technologies, Inc. Method for reducing current density in a magnetoelectronic device
US8279667B2 (en) * 2009-05-08 2012-10-02 Samsung Electronics Co., Ltd. Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement
JP5615310B2 (ja) * 2012-03-16 2014-10-29 株式会社東芝 磁気メモリ
CN105336357B (zh) * 2014-07-17 2018-05-11 华为技术有限公司 磁性存储装置及运用该装置的信息存储方法
JP6193190B2 (ja) * 2014-08-25 2017-09-06 株式会社東芝 磁気記憶素子および磁気メモリ
US10056126B1 (en) 2017-10-27 2018-08-21 Honeywell International Inc. Magnetic tunnel junction based memory device
US10885961B2 (en) * 2019-03-14 2021-01-05 Samsung Electronics Co., Ltd. Race-track memory with improved writing scheme
DE102019210177B4 (de) 2019-07-10 2021-05-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer gegenläufig magnetisierten Magnetstruktur
JP2021072138A (ja) * 2019-10-29 2021-05-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． レーストラック磁気メモリ装置、及びその書き込み方法
CN112289363B (zh) * 2020-11-23 2023-03-14 信阳师范学院 基于磁性斯格明子的赛道存储器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940750A (en) * 1973-03-26 1976-02-24 International Business Machines Corporation Wall topology storage system
US5565849A (en) * 1995-02-22 1996-10-15 Sensormatic Electronics Corporation Self-biased magnetostrictive element for magnetomechanical electronic article surveillance systems
JPH0936455A (ja) * 1995-07-21 1997-02-07 Sony Corp 磁気抵抗効果素子
US6667118B1 (en) 2000-09-05 2003-12-23 Seagate Technology Llc Texture-induced magnetic anisotropy of soft underlayers for perpendicular recording media
KR100954970B1 (ko) * 2001-10-12 2010-04-29 소니 주식회사 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법
KR100450794B1 (ko) * 2001-12-13 2004-10-01 삼성전자주식회사 마그네틱 랜덤 엑세스 메모리 및 그 작동 방법
US7108797B2 (en) * 2003-06-10 2006-09-19 International Business Machines Corporation Method of fabricating a shiftable magnetic shift register
US6834005B1 (en) * 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
JP4095498B2 (ja) * 2003-06-23 2008-06-04 株式会社東芝 磁気ランダムアクセスメモリ、電子カードおよび電子装置
JP2005093488A (ja) * 2003-09-12 2005-04-07 Sony Corp 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法
US6970379B2 (en) * 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
US6947235B2 (en) * 2003-12-03 2005-09-20 Hitachi Global Storage Technologies Netherlands B.V. Patterned multilevel perpendicular magnetic recording media
JP4413603B2 (ja) * 2003-12-24 2010-02-10 株式会社東芝 磁気記憶装置及び磁気情報の書込み方法
JPWO2005069368A1 (ja) 2004-01-15 2007-12-27 独立行政法人科学技術振興機構 電流注入磁壁移動素子
US7236386B2 (en) * 2004-12-04 2007-06-26 International Business Machines Corporation System and method for transferring data to and from a magnetic shift register with a shiftable data column
US7242604B2 (en) * 2005-01-13 2007-07-10 International Business Machines Corporation Switchable element
EP1701357B1 (de) * 2005-03-09 2008-10-29 Korea University Foundation Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP2007123640A (ja) * 2005-10-28 2007-05-17 Sharp Corp 磁気メモリ、情報記録／再生方法、情報再生方法、情報記録方法
KR100754394B1 (ko) * 2006-01-26 2007-08-31 삼성전자주식회사 마그네틱 도메인 드래깅을 이용하는 자성소자 유닛 및 그작동 방법

Also Published As

Publication number Publication date
KR100754397B1 (ko) 2007-08-31
US20070195587A1 (en) 2007-08-23
KR20070084884A (ko) 2007-08-27
EP1826773A1 (de) 2007-08-29
EP1826773B1 (de) 2009-06-03
JP2007227916A (ja) 2007-09-06
US7738278B2 (en) 2010-06-15
CN101026001A (zh) 2007-08-29
CN101026001B (zh) 2012-04-18
JP5300201B2 (ja) 2013-09-25

Similar Documents

Publication Publication Date Title
DE602007000873D1 (de) Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen
DE602006007099D1 (de) Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen
DE602007002085D1 (de) Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen
DE602006006786D1 (de) Magnetspeichervorrichtung unter Verwendung von Dragging einer magnetischen Domäne
DE602006011424D1 (de) Magnetische Plattenvorrichtung
DK1999154T3 (da) Fremstillede heterodimere proteindomæner
DK2015804T3 (da) Infusionsapparat med datalagerindretning
BRPI0905620A2 (pt) Transdutor magnético
DK2076675T3 (da) Mikroaktuator med voks
BRPI0913958A2 (pt) compostos heterocíclicos de 5 e 6 membros
NO20061669L (no) SmartPlug with centralizer means
DE602006005098D1 (de) Senkrechte magnetische Aufzeichnungsplatte mit verlt
DE602008002287D1 (de) Aufzeichnungsgerät
FR2905793B1 (fr) Dispositif magnetique integre controle piezoelectriquement
DE602006012572D1 (de) Flüssigkeitseinspritzdüse
BRPI0914533A2 (pt) "métodos"
DE602007001527D1 (de) Em der messplatte
FR2934677B1 (fr) Dispositif d'actionneur gyroscopique a suspension magnetique
FR2928824B1 (fr) Dispositif d'ancrage trans-cortical
BRPI0820227A2 (pt) Fechadura magnética
DE112007000676A5 (de) Flüssigkristallines Medium
BRPI0916092A2 (pt) "isoformas específicas de anticorpos anti-her4"
FR2934328B1 (fr) Soupape d'injection
DE112008000259A5 (de) Aufspuleinrichtung
DE602007006074D1 (de) Aufzeichnungsgerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition