DE602007002085D1 - Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen - Google Patents

Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen

Info

Publication number
DE602007002085D1
DE602007002085D1 DE602007002085T DE602007002085T DE602007002085D1 DE 602007002085 D1 DE602007002085 D1 DE 602007002085D1 DE 602007002085 T DE602007002085 T DE 602007002085T DE 602007002085 T DE602007002085 T DE 602007002085T DE 602007002085 D1 DE602007002085 D1 DE 602007002085D1
Authority
DE
Germany
Prior art keywords
magnetic
movement
storage device
domains
magnetic storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007002085T
Other languages
English (en)
Inventor
Kee-Won Kim
Tae-Wan Kim
Young-Jin Cho
In-Jun Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602007002085D1 publication Critical patent/DE602007002085D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B11/00—Brushes with reservoir or other means for applying substances, e.g. paints, pastes, water
    • A46B11/001—Brushes with reservoir or other means for applying substances, e.g. paints, pastes, water with integral reservoirs
    • A46B11/002—Brushes with reservoir or other means for applying substances, e.g. paints, pastes, water with integral reservoirs pressurised at moment of use manually or by powered means
    • A46B11/0024—Brushes with reservoir or other means for applying substances, e.g. paints, pastes, water with integral reservoirs pressurised at moment of use manually or by powered means with a permanently displaceable pressurising member that remain in position unless actuated, e.g. lead-screw or ratchet mechanisms, toothpaste tube twisting or rolling devices
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
    • A45D44/00—Other cosmetic or toiletry articles, e.g. for hairdressers' rooms
    • A45D44/18—Receptacles for hair brushes or tooth brushes as travelling equipment
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B15/00—Other brushes; Brushes with additional arrangements
    • A46B15/0091—Container, e.g. bag or box with a collection of various devices
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B15/00—Other brushes; Brushes with additional arrangements
    • A46B15/0095—Brushes with a feature for storage after use
    • A—HUMAN NECESSITIES
    • A46—BRUSHWARE
    • A46B—BRUSHES
    • A46B5/00—Brush bodies; Handles integral with brushware
    • A46B5/0095—Removable or interchangeable brush heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Dentistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE602007002085T 2006-02-23 2007-02-12 Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen Active DE602007002085D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060017875A KR100695171B1 (ko) 2006-02-23 2006-02-23 마그네틱 도메인 이동을 이용하는 자기 메모리 장치

Publications (1)

Publication Number Publication Date
DE602007002085D1 true DE602007002085D1 (de) 2009-10-08

Family

ID=38103651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007002085T Active DE602007002085D1 (de) 2006-02-23 2007-02-12 Magnetspeichervorrichtung unter Verwendung der Bewegung magnetischer Domänen

Country Status (6)

Country Link
US (1) US8339728B2 (de)
EP (1) EP1826774B1 (de)
JP (1) JP5101125B2 (de)
KR (1) KR100695171B1 (de)
CN (1) CN101026002B (de)
DE (1) DE602007002085D1 (de)

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* Cited by examiner, † Cited by third party
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KR100695171B1 (ko) 2006-02-23 2007-03-14 삼성전자주식회사 마그네틱 도메인 이동을 이용하는 자기 메모리 장치
KR100790886B1 (ko) * 2006-09-15 2008-01-03 삼성전자주식회사 자구 벽 이동을 이용한 정보 저장 장치
KR100837412B1 (ko) * 2006-12-12 2008-06-12 삼성전자주식회사 멀티 스택 메모리 소자
KR101435516B1 (ko) * 2008-02-14 2014-08-29 삼성전자주식회사 자구벽 이동을 이용한 정보저장장치 및 그 동작방법
KR20100075203A (ko) * 2008-12-24 2010-07-02 삼성전자주식회사 정보저장장치 및 그의 동작방법
CN101771067B (zh) * 2008-12-29 2012-02-29 财团法人工业技术研究院 磁性存储器及其驱动方法与制造方法
US8050074B2 (en) * 2009-02-17 2011-11-01 Samsung Electronics Co., Ltd. Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
US8406029B2 (en) 2009-02-17 2013-03-26 Samsung Electronics Co., Ltd. Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
KR20100104044A (ko) * 2009-03-16 2010-09-29 삼성전자주식회사 정보저장장치 및 그의 동작방법
US8279667B2 (en) * 2009-05-08 2012-10-02 Samsung Electronics Co., Ltd. Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement
US8284594B2 (en) 2009-09-03 2012-10-09 International Business Machines Corporation Magnetic devices and structures
KR20110029811A (ko) 2009-09-16 2011-03-23 삼성전자주식회사 수직 나노 와이어를 포함하는 정보 저장 장치
US8164940B2 (en) * 2009-12-15 2012-04-24 Hitachi Global Storage Technologies Netherlands, B.V. Read/write structures for a three dimensional memory
US8279662B2 (en) 2010-11-11 2012-10-02 Seagate Technology Llc Multi-bit magnetic memory with independently programmable free layer domains
JP5658704B2 (ja) 2012-03-13 2015-01-28 株式会社東芝 シフトレジスタ型メモリおよびその駆動方法
US9123878B2 (en) 2013-09-09 2015-09-01 Kabushiki Kaisha Toshiba Magnetic memory device utilizing magnetic domain wall motion
CN109308924B (zh) * 2018-08-10 2021-01-01 复旦大学 一种计算器件及其计算方法
CN111293136A (zh) * 2018-12-07 2020-06-16 中国科学院上海微系统与信息技术研究所 基于二维器件的三维mram存储结构及其制作方法
US10885961B2 (en) * 2019-03-14 2021-01-05 Samsung Electronics Co., Ltd. Race-track memory with improved writing scheme
US11610940B2 (en) 2019-08-09 2023-03-21 Samsung Electronics Co., Ltd. Magnetic memory devices having a first magnetic pattern and multiple second magnetic patterns thereon
KR20210021225A (ko) 2019-08-16 2021-02-25 삼성전자주식회사 자기 메모리 장치
CN111555791B (zh) * 2020-03-31 2022-04-08 北京控制工程研究所 一种高可靠高频率的卫星无线数据采集系统及方法
KR20210140960A (ko) 2020-05-14 2021-11-23 삼성전자주식회사 메모리 소자 및 그 제조 방법

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JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
JP4149647B2 (ja) 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4491160B2 (ja) * 2001-03-19 2010-06-30 株式会社エーエス 転倒防止装置
KR100954970B1 (ko) * 2001-10-12 2010-04-29 소니 주식회사 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법
JP2003168785A (ja) 2001-11-30 2003-06-13 Toshiba Corp 磁気ランダムアクセスメモリ
KR100450794B1 (ko) 2001-12-13 2004-10-01 삼성전자주식회사 마그네틱 랜덤 엑세스 메모리 및 그 작동 방법
KR100457159B1 (ko) 2001-12-26 2004-11-16 주식회사 하이닉스반도체 마그네틱 램
US6778421B2 (en) 2002-03-14 2004-08-17 Hewlett-Packard Development Company, Lp. Memory device array having a pair of magnetic bits sharing a common conductor line
US6885573B2 (en) 2002-03-15 2005-04-26 Hewlett-Packard Development Company, L.P. Diode for use in MRAM devices and method of manufacture
JP2003346489A (ja) 2002-05-24 2003-12-05 Mitsubishi Electric Corp 半導体記憶装置
US6754124B2 (en) 2002-06-11 2004-06-22 Micron Technology, Inc. Hybrid MRAM array structure and operation
JP2004023062A (ja) 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
JP3959335B2 (ja) 2002-07-30 2007-08-15 株式会社東芝 磁気記憶装置及びその製造方法
KR20040059060A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 마그네틱 램 및 이를 이용한 데이터 저장 및 판독 방법
KR20040086690A (ko) 2003-04-03 2004-10-12 주식회사 하이닉스반도체 단일 게이트라인을 이용한 반도체소자의 제조방법
US7291878B2 (en) 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
US7108797B2 (en) * 2003-06-10 2006-09-19 International Business Machines Corporation Method of fabricating a shiftable magnetic shift register
US6898132B2 (en) * 2003-06-10 2005-05-24 International Business Machines Corporation System and method for writing to a magnetic shift register
US6834005B1 (en) * 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
US6970379B2 (en) * 2003-10-14 2005-11-29 International Business Machines Corporation System and method for storing data in an unpatterned, continuous magnetic layer
KR100634501B1 (ko) * 2004-01-29 2006-10-13 삼성전자주식회사 자기 메모리 소자 및 그 제조방법
JP2005285475A (ja) 2004-03-29 2005-10-13 Nissan Motor Co Ltd 燃料電池システム
JP4747507B2 (ja) 2004-04-16 2011-08-17 ソニー株式会社 磁気メモリ及びその記録方法
KR100604913B1 (ko) * 2004-10-28 2006-07-28 삼성전자주식회사 멀티 비트 셀 어레이 구조를 가지는 마그네틱 램
US7236386B2 (en) * 2004-12-04 2007-06-26 International Business Machines Corporation System and method for transferring data to and from a magnetic shift register with a shiftable data column
JP2006237183A (ja) * 2005-02-24 2006-09-07 Internatl Business Mach Corp <Ibm> 磁気シフト・レジスタ・メモリ・デバイスにおいて用いるデータ・トラックの製造方法
US7585724B2 (en) 2005-05-10 2009-09-08 Elite Semiconductor Memory Technology, Inc. FLASH memory device and method of manufacture
JP2007073103A (ja) * 2005-09-05 2007-03-22 Sharp Corp メモリ素子およびメモリ素子のマップアドレス管理方法
JP4799983B2 (ja) * 2005-09-29 2011-10-26 シャープ株式会社 磁気メモリ、磁気メモリの駆動回路、磁気メモリの配線方法、および磁気メモリの駆動方法
KR100695171B1 (ko) 2006-02-23 2007-03-14 삼성전자주식회사 마그네틱 도메인 이동을 이용하는 자기 메모리 장치

Also Published As

Publication number Publication date
CN101026002B (zh) 2011-11-09
EP1826774B1 (de) 2009-08-26
US20070198618A1 (en) 2007-08-23
EP1826774A1 (de) 2007-08-29
US8339728B2 (en) 2012-12-25
CN101026002A (zh) 2007-08-29
KR100695171B1 (ko) 2007-03-14
JP5101125B2 (ja) 2012-12-19
JP2007226951A (ja) 2007-09-06

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