DE602006001393D1 - Zusammensetzung zur Befestigung von Hochleistungshalbleiter - Google Patents

Zusammensetzung zur Befestigung von Hochleistungshalbleiter

Info

Publication number
DE602006001393D1
DE602006001393D1 DE602006001393T DE602006001393T DE602006001393D1 DE 602006001393 D1 DE602006001393 D1 DE 602006001393D1 DE 602006001393 T DE602006001393 T DE 602006001393T DE 602006001393 T DE602006001393 T DE 602006001393T DE 602006001393 D1 DE602006001393 D1 DE 602006001393D1
Authority
DE
Germany
Prior art keywords
lead
die
free
attach
directive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006001393T
Other languages
English (en)
Inventor
Muriel Thomas
Klaus Schaack
Timo Goergen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
Umicore AG and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Umicore AG and Co KG filed Critical Umicore AG and Co KG
Publication of DE602006001393D1 publication Critical patent/DE602006001393D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/54—Inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Conductive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
DE602006001393T 2006-03-06 2006-03-06 Zusammensetzung zur Befestigung von Hochleistungshalbleiter Active DE602006001393D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06004444A EP1837383B1 (de) 2006-03-06 2006-03-06 Zusammensetzung zur Befestigung von Hochleistungshalbleiter

Publications (1)

Publication Number Publication Date
DE602006001393D1 true DE602006001393D1 (de) 2008-07-17

Family

ID=36384351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006001393T Active DE602006001393D1 (de) 2006-03-06 2006-03-06 Zusammensetzung zur Befestigung von Hochleistungshalbleiter

Country Status (6)

Country Link
US (1) US20070296089A1 (de)
EP (1) EP1837383B1 (de)
JP (1) JP2007302872A (de)
CN (1) CN101055859A (de)
AT (1) ATE397647T1 (de)
DE (1) DE602006001393D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009230092A (ja) * 2008-02-27 2009-10-08 Kyocera Corp 光アイソレータモジュールおよびそれを用いた光素子モジュール
EP2278593A4 (de) * 2008-04-30 2013-08-28 Hitachi Chemical Co Ltd Verbindungsmaterial und halbleiteranordnung
FR2953064B1 (fr) 2009-11-20 2011-12-16 St Microelectronics Tours Sas Procede d'encapsulation de composants electroniques sur tranche
US20130256894A1 (en) * 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
US9559064B2 (en) * 2013-12-04 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in package-on-package structures
CN105489746B (zh) * 2014-09-19 2018-02-23 展晶科技(深圳)有限公司 发光芯片模组、发光二极管以及发光芯片模组的制造方法
JP6072117B2 (ja) * 2015-03-30 2017-02-01 Ｊｘ金属株式会社 銅微粒子ペースト及びその製造方法
DE102016220092A1 (de) * 2016-10-14 2018-04-19 Robert Bosch Gmbh Halbzeug zur Kontaktierung von Bauteilen
CN106381117A (zh) * 2016-10-26 2017-02-08 三友（天津）高分子技术有限公司 一种双组份环氧美缝胶
US20210363313A1 (en) * 2017-08-07 2021-11-25 Zoltek Corporation Polyvinyl alcohol-sized fillers for reinforcing plastics

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983075A (en) * 1974-06-21 1976-09-28 Kennecott Copper Corporation Copper filled conductive epoxy
US4147669A (en) * 1977-03-28 1979-04-03 Rockwell International Corporation Conductive adhesive for providing electrical and thermal conductivity
US4247594A (en) * 1979-04-30 1981-01-27 Marshall & Pike Enterprises Inc. Electrically conductive resinous composition
JPS56103260A (en) * 1980-01-22 1981-08-18 Asahi Kagaku Kenkyusho:Kk Conductive paint containing copper powder
JPS604552A (ja) * 1983-06-23 1985-01-11 Mitsubishi Gas Chem Co Inc 導電性組成物
JPS6167702A (ja) * 1984-09-07 1986-04-07 Mitsui Mining & Smelting Co Ltd 導電性粉末及びこれを用いた導電性組成物
US4732702A (en) * 1986-02-13 1988-03-22 Hitachi Chemical Company, Ltd. Electroconductive resin paste
JPH0759660B2 (ja) * 1987-09-25 1995-06-28 アルプス電気株式会社 導電性組成物
US5204399A (en) * 1989-03-09 1993-04-20 National Starch And Chemical Investment Holding Corporation Thermoplastic film die attach adhesives
US4975221A (en) * 1989-05-12 1990-12-04 National Starch And Chemical Investment Holding Corporation High purity epoxy formulations for use as die attach adhesives
JP2893782B2 (ja) * 1990-01-19 1999-05-24 日立化成工業株式会社 導電性接着剤および半導体装置
US5188767A (en) * 1990-04-27 1993-02-23 Hitachi Chemical Co., Ltd. Electroconductive resin paste containing mixed epoxy resin and electroconductive metal powder
JPH0412595A (ja) * 1990-05-02 1992-01-17 Mitsubishi Petrochem Co Ltd 導電性ペースト組成物
US5766670A (en) * 1993-11-17 1998-06-16 Ibm Via fill compositions for direct attach of devices and methods for applying same
WO1994024704A1 (en) * 1993-04-12 1994-10-27 Bolger Justin C Area bonding conductive adhesive preforms
DE69417684T2 (de) * 1993-10-29 1999-09-09 Dai-Ichi Kogyo Seiyaku Co. Leitfähige Pastenzusammensetzung zum Füllen von Kontaktlöchern, Leiterplatte unter Anwendung dieser leifähigen Paste und Verfahren zur Herstellung
US5683627A (en) * 1995-03-15 1997-11-04 Tokuyama Corporation Curable electroconductive composition
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
TW459032B (en) * 1998-03-18 2001-10-11 Sumitomo Bakelite Co An anisotropic conductive adhesive and method for preparation thereof and an electronic apparatus using said adhesive
US6344157B1 (en) * 1999-02-12 2002-02-05 National Starch And Chemical Investment Holding Corporation Conductive and resistive materials with electrical stability for use in electronics devices
US6551711B1 (en) * 1999-06-18 2003-04-22 The University Of Connecticut Curable episulfide systems having enhanced adhesion to metal
US6459147B1 (en) * 2000-03-27 2002-10-01 Amkor Technology, Inc. Attaching semiconductor dies to substrates with conductive straps
TWI282811B (en) * 2000-04-10 2007-06-21 Sumitomo Bakelite Co Die-attaching paste and semiconductor device
ATE291048T1 (de) * 2000-05-18 2005-04-15 Nat Starch Chem Invest Vinylether und karbamat oder harnstofffunktionalität enthaltende haftklebemittel für halbleiterplatten
US6750301B1 (en) * 2000-07-07 2004-06-15 National Starch And Chemical Investment Holding Corporation Die attach adhesives with epoxy compound or resin having allyl or vinyl groups
US6462108B1 (en) * 2000-07-20 2002-10-08 National Starch And Chemical Investment Holding Corporation High Tg potting compound
US6322620B1 (en) * 2000-11-16 2001-11-27 National Starch And Chemical Investment Holding Corporation Conductive ink composition
AU2002236606A1 (en) * 2000-12-15 2002-06-24 Omg Americas, Inc. Irregular shaped copper particles and methods of use
US20050182161A1 (en) * 2000-12-15 2005-08-18 Rajesh Khattar Irregular shaped copper particles and methods of use
JP3563387B2 (ja) * 2001-01-23 2004-09-08 Ｎｅｃエレクトロニクス株式会社 半導体装置用導電性硬化樹脂及び半導体装置
US6583201B2 (en) * 2001-04-25 2003-06-24 National Starch And Chemical Investment Holding Corporation Conductive materials with electrical stability for use in electronics devices
JP3854103B2 (ja) * 2001-06-28 2006-12-06 住友ベークライト株式会社 導電性ペースト及び該ペーストを用いてなる半導体装置
JP3719234B2 (ja) * 2001-08-06 2005-11-24 日立化成工業株式会社 半導体用接着フィルム、およびこれを用いた半導体用接着フィルム付きリードフレームならびに半導体装置
US7298046B2 (en) * 2003-01-10 2007-11-20 Kyocera America, Inc. Semiconductor package having non-ceramic based window frame
US20050014313A1 (en) * 2003-03-26 2005-01-20 Workman Derek B. Underfill method
KR20060007011A (ko) * 2003-04-01 2006-01-23 아길라 테크놀로지스, 인코포레이티드 열 전도성 접착제 조성물 및 장치 부착 방법

Also Published As

Publication number Publication date
EP1837383A1 (de) 2007-09-26
JP2007302872A (ja) 2007-11-22
ATE397647T1 (de) 2008-06-15
EP1837383B1 (de) 2008-06-04
CN101055859A (zh) 2007-10-17
US20070296089A1 (en) 2007-12-27

Similar Documents

Publication Publication Date Title
DE602006001393D1 (de) Zusammensetzung zur Befestigung von Hochleistungshalbleiter
KR102027615B1 (ko) 히트 싱크 장착 파워 모듈용 기판, 냉각기 장착 파워 모듈용 기판 및 파워 모듈
TWI231940B (en) Conductive paste, multi-layered substrate using it, and method for producing it
EP2092560B1 (de) Bleifreie lotlegierung für leiterplattenbaugruppen für hochtemperaturumgebungen
WO2009044801A1 (ja) 接着剤組成物及びそれを用いた電子部品搭載基板並びに半導体装置
WO2018159664A1 (ja) はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
TWI315967B (de)
JP2007243109A (ja) 電子機器
JP5842084B2 (ja) 半導体部品実装基板
TW200608845A (en) Method for producing electronic circuit board
TW200634127A (en) An electrically conductive adhesive, electrical part and electrical part module were made of it
US7094975B2 (en) Circuit board with localized stiffener for enhanced circuit component reliability
JP2011147982A5 (de)
JP2014209624A (ja) 回路基板と半導体部品との接合部構造
JP2006114641A (ja) 半導体装置
KR20150111403A (ko) 전자부품을 접합하기 위한 무연납땜용 플럭스 및 페이스트, 이를 이용하여 납땜하는 방법
JP2008087014A (ja) はんだペーストおよび接合部品
TW201711057A (zh) 安裝用導電性糊
JP6969070B2 (ja) はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
JP2007165476A (ja) 表面実装部品
JP3185456U (ja) 余剰はんだによる部品の実装不良を抑制するプリント配線板
JP4697665B2 (ja) 電子機器用板金部品
JP2018022764A (ja) 電子装置
JP2005039113A (ja) 表面実装方法及びそれを用いた混成集積回路
KR20100067702A (ko) 접착층이 형성된 솔더볼 및 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: W.C. HERAEUS GMBH, 63450 HANAU, DE

R082 Change of representative

Ref document number: 1837383

Country of ref document: EP

Representative=s name: HANS-CHRISTIAN KUEHN, 63450 HANAU, DE