DE602005025781D1 - Widerstand einer integrierten schaltung - Google Patents
Widerstand einer integrierten schaltungInfo
- Publication number
- DE602005025781D1 DE602005025781D1 DE602005025781T DE602005025781T DE602005025781D1 DE 602005025781 D1 DE602005025781 D1 DE 602005025781D1 DE 602005025781 T DE602005025781 T DE 602005025781T DE 602005025781 T DE602005025781 T DE 602005025781T DE 602005025781 D1 DE602005025781 D1 DE 602005025781D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- resistance
- contacts
- mesa
- recesses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/917,935 US7199016B2 (en) | 2004-08-13 | 2004-08-13 | Integrated circuit resistor |
PCT/US2005/028776 WO2006020887A1 (en) | 2004-08-13 | 2005-08-11 | Integrated circuit resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005025781D1 true DE602005025781D1 (de) | 2011-02-17 |
Family
ID=35519698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005025781T Active DE602005025781D1 (de) | 2004-08-13 | 2005-08-11 | Widerstand einer integrierten schaltung |
Country Status (8)
Country | Link |
---|---|
US (2) | US7199016B2 (de) |
EP (1) | EP1790009B1 (de) |
JP (1) | JP5183199B2 (de) |
KR (1) | KR101164272B1 (de) |
CN (1) | CN100524759C (de) |
AT (1) | ATE494634T1 (de) |
DE (1) | DE602005025781D1 (de) |
WO (1) | WO2006020887A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8009011B2 (en) * | 2007-06-29 | 2011-08-30 | Semtech Corporation | Electrically adjustable resistor |
JP5468730B2 (ja) * | 2007-08-28 | 2014-04-09 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
US8278568B2 (en) * | 2009-07-23 | 2012-10-02 | Lexmark International, Inc. | Z-directed variable value components for printed circuit boards |
US20110017504A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Ferrite Bead Components for Printed Circuit Boards |
US20110017502A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Components for Printed Circuit Boards |
US8273996B2 (en) * | 2009-07-23 | 2012-09-25 | Lexmark International, Inc. | Z-directed connector components for printed circuit boards |
US8198547B2 (en) * | 2009-07-23 | 2012-06-12 | Lexmark International, Inc. | Z-directed pass-through components for printed circuit boards |
US8198548B2 (en) * | 2009-07-23 | 2012-06-12 | Lexmark International, Inc. | Z-directed capacitor components for printed circuit boards |
US8735734B2 (en) * | 2009-07-23 | 2014-05-27 | Lexmark International, Inc. | Z-directed delay line components for printed circuit boards |
US8237061B2 (en) * | 2009-07-23 | 2012-08-07 | Lexmark International, Inc. | Z-directed filter components for printed circuit boards |
US20110017581A1 (en) * | 2009-07-23 | 2011-01-27 | Keith Bryan Hardin | Z-Directed Switch Components for Printed Circuit Boards |
WO2011107161A1 (en) | 2010-03-05 | 2011-09-09 | Epcos Ag | Resistance component |
US8624353B2 (en) * | 2010-12-22 | 2014-01-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device over semiconductor die with conductive bridge and fan-out redistribution layer |
WO2012099605A1 (en) * | 2011-01-21 | 2012-07-26 | Lexmark International, Inc. | Z-directed variable value components for printed circuit boards |
KR101045024B1 (ko) * | 2011-05-12 | 2011-06-30 | 류순모 | 고층 건물의 화재피난용 맨홀개폐장치 |
US8752280B2 (en) | 2011-09-30 | 2014-06-17 | Lexmark International, Inc. | Extrusion process for manufacturing a Z-directed component for a printed circuit board |
US8943684B2 (en) * | 2011-08-31 | 2015-02-03 | Lexmark International, Inc. | Continuous extrusion process for manufacturing a Z-directed component for a printed circuit board |
US9078374B2 (en) | 2011-08-31 | 2015-07-07 | Lexmark International, Inc. | Screening process for manufacturing a Z-directed component for a printed circuit board |
US9009954B2 (en) | 2011-08-31 | 2015-04-21 | Lexmark International, Inc. | Process for manufacturing a Z-directed component for a printed circuit board using a sacrificial constraining material |
US8790520B2 (en) | 2011-08-31 | 2014-07-29 | Lexmark International, Inc. | Die press process for manufacturing a Z-directed component for a printed circuit board |
US8658245B2 (en) | 2011-08-31 | 2014-02-25 | Lexmark International, Inc. | Spin coat process for manufacturing a Z-directed component for a printed circuit board |
US8822840B2 (en) | 2012-03-29 | 2014-09-02 | Lexmark International, Inc. | Z-directed printed circuit board components having conductive channels for controlling transmission line impedance |
US8822838B2 (en) | 2012-03-29 | 2014-09-02 | Lexmark International, Inc. | Z-directed printed circuit board components having conductive channels for reducing radiated emissions |
US8830692B2 (en) | 2012-03-29 | 2014-09-09 | Lexmark International, Inc. | Ball grid array systems for surface mounting an integrated circuit using a Z-directed printed circuit board component |
US8912452B2 (en) | 2012-03-29 | 2014-12-16 | Lexmark International, Inc. | Z-directed printed circuit board components having different dielectric regions |
KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
US10242803B2 (en) | 2015-07-19 | 2019-03-26 | Vq Research, Inc. | Methods and systems for geometric optimization of multilayer ceramic capacitors |
US10236123B2 (en) | 2015-07-19 | 2019-03-19 | Vq Research, Inc. | Methods and systems to minimize delamination of multilayer ceramic capacitors |
US10332684B2 (en) | 2015-07-19 | 2019-06-25 | Vq Research, Inc. | Methods and systems for material cladding of multilayer ceramic capacitors |
US10431508B2 (en) | 2015-07-19 | 2019-10-01 | Vq Research, Inc. | Methods and systems to improve printed electrical components and for integration in circuits |
US10128047B2 (en) | 2015-07-19 | 2018-11-13 | Vq Research, Inc. | Methods and systems for increasing surface area of multilayer ceramic capacitors |
US10510823B2 (en) * | 2016-10-12 | 2019-12-17 | Mediatek Inc. | Impedance circuit with poly-resistor |
US10535651B2 (en) | 2016-10-12 | 2020-01-14 | Mediatek Inc. | Impedance circuit with poly-resistor |
US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59214250A (ja) | 1983-05-20 | 1984-12-04 | Toshiba Corp | 半導体装置 |
JPS62217671A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | 電界効果型トランジスタの製造方法 |
IT1197776B (it) | 1986-07-15 | 1988-12-06 | Gte Telecom Spa | Processo per l'ottenimento di circuiti passivi a strato sottile con linee resistive a differenti resistenze di strato e circuito passivo realizzato con il processo suddetto |
US4701241A (en) * | 1986-10-06 | 1987-10-20 | Rca Corporation | Method of making a resistor |
US5141597A (en) * | 1990-11-14 | 1992-08-25 | United Technologies Corporation | Thin polysilicon resistors |
JPH09321063A (ja) * | 1996-05-31 | 1997-12-12 | Nec Corp | 半導体装置およびその製造方法 |
JPH1012630A (ja) | 1996-06-20 | 1998-01-16 | Mitsubishi Electric Corp | 高周波集積回路装置 |
JPH10242394A (ja) * | 1997-02-27 | 1998-09-11 | Matsushita Electron Corp | 半導体装置の製造方法 |
JP2000101067A (ja) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置および集積回路装置 |
US6307221B1 (en) * | 1998-11-18 | 2001-10-23 | The Whitaker Corporation | InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures |
JP2001015767A (ja) | 1999-06-29 | 2001-01-19 | Toshiba Corp | 化合物半導体装置 |
US6797994B1 (en) | 2000-02-14 | 2004-09-28 | Raytheon Company | Double recessed transistor |
JP2003060044A (ja) | 2001-08-09 | 2003-02-28 | Seiko Epson Corp | 半導体抵抗素子及びその製造方法 |
US8546884B2 (en) * | 2002-10-29 | 2013-10-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | High value resistors in gallium arsenide |
JP4064800B2 (ja) | 2002-12-10 | 2008-03-19 | 株式会社東芝 | ヘテロ接合型化合物半導体電界効果トランジスタ及びその製造方法 |
US7183593B2 (en) * | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
US7015519B2 (en) * | 2004-02-20 | 2006-03-21 | Anadigics, Inc. | Structures and methods for fabricating vertically integrated HBT/FET device |
JP2005340549A (ja) * | 2004-05-28 | 2005-12-08 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
-
2004
- 2004-08-13 US US10/917,935 patent/US7199016B2/en not_active Expired - Fee Related
-
2005
- 2005-08-11 DE DE602005025781T patent/DE602005025781D1/de active Active
- 2005-08-11 EP EP05789167A patent/EP1790009B1/de not_active Not-in-force
- 2005-08-11 WO PCT/US2005/028776 patent/WO2006020887A1/en active Application Filing
- 2005-08-11 JP JP2007525836A patent/JP5183199B2/ja not_active Expired - Fee Related
- 2005-08-11 AT AT05789167T patent/ATE494634T1/de not_active IP Right Cessation
- 2005-08-11 CN CNB2005800274975A patent/CN100524759C/zh not_active Expired - Fee Related
- 2005-08-11 KR KR1020077005711A patent/KR101164272B1/ko not_active IP Right Cessation
-
2007
- 2007-02-26 US US11/678,732 patent/US7884442B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060033177A1 (en) | 2006-02-16 |
ATE494634T1 (de) | 2011-01-15 |
JP5183199B2 (ja) | 2013-04-17 |
KR20070050080A (ko) | 2007-05-14 |
US7199016B2 (en) | 2007-04-03 |
CN101006583A (zh) | 2007-07-25 |
CN100524759C (zh) | 2009-08-05 |
WO2006020887A1 (en) | 2006-02-23 |
US20070138646A1 (en) | 2007-06-21 |
KR101164272B1 (ko) | 2012-07-09 |
JP2008510308A (ja) | 2008-04-03 |
EP1790009B1 (de) | 2011-01-05 |
EP1790009A1 (de) | 2007-05-30 |
US7884442B2 (en) | 2011-02-08 |
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