DE602005024208D1 - Dielektrisches Element, piezoelektrisches Element, Tintenstrahlkopf, Tintenstrahlaufzeichnungsgerät sowie deren Herstellungsverfahren - Google Patents

Dielektrisches Element, piezoelektrisches Element, Tintenstrahlkopf, Tintenstrahlaufzeichnungsgerät sowie deren Herstellungsverfahren

Info

Publication number
DE602005024208D1
DE602005024208D1 DE200560024208 DE602005024208T DE602005024208D1 DE 602005024208 D1 DE602005024208 D1 DE 602005024208D1 DE 200560024208 DE200560024208 DE 200560024208 DE 602005024208 T DE602005024208 T DE 602005024208T DE 602005024208 D1 DE602005024208 D1 DE 602005024208D1
Authority
DE
Germany
Prior art keywords
ink jet
production method
recording device
piezoelectric element
jet recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE200560024208
Other languages
German (de)
English (en)
Inventor
Kenichi Takeda
Toshihiro Ifuku
Tetsuro Fukui
Hiroshi Funakubo
Shoji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602005024208D1 publication Critical patent/DE602005024208D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
DE200560024208 2004-03-29 2005-03-23 Dielektrisches Element, piezoelektrisches Element, Tintenstrahlkopf, Tintenstrahlaufzeichnungsgerät sowie deren Herstellungsverfahren Expired - Lifetime DE602005024208D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004094597 2004-03-29

Publications (1)

Publication Number Publication Date
DE602005024208D1 true DE602005024208D1 (de) 2010-12-02

Family

ID=34909426

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200560024208 Expired - Lifetime DE602005024208D1 (de) 2004-03-29 2005-03-23 Dielektrisches Element, piezoelektrisches Element, Tintenstrahlkopf, Tintenstrahlaufzeichnungsgerät sowie deren Herstellungsverfahren

Country Status (7)

Country Link
US (1) US7265483B2 (https=)
EP (1) EP1585180B1 (https=)
JP (2) JP2005313628A (https=)
KR (1) KR100777468B1 (https=)
CN (1) CN100418768C (https=)
DE (1) DE602005024208D1 (https=)
TW (1) TWI253392B (https=)

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JP5527527B2 (ja) 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
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JP6020784B2 (ja) * 2011-01-19 2016-11-02 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー
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JP5751407B2 (ja) * 2011-01-19 2015-07-22 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー
CN102136315B (zh) * 2011-03-21 2012-08-15 四川师范大学 多层陶瓷全面积LNO/Ag/LNO复合电极及制备方法
JP5783252B2 (ja) * 2011-07-29 2015-09-24 株式会社村田製作所 弾性波デバイスの製造方法
JP5836754B2 (ja) * 2011-10-04 2015-12-24 富士フイルム株式会社 圧電体素子及びその製造方法
US8866367B2 (en) 2011-10-17 2014-10-21 The United States Of America As Represented By The Secretary Of The Army Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
US9761785B2 (en) 2011-10-17 2017-09-12 The United States Of America As Represented By The Secretary Of The Army Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
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JP5382196B2 (ja) * 2012-12-27 2014-01-08 セイコーエプソン株式会社 液体吐出ヘッドの製造方法
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JP6142597B2 (ja) * 2013-03-18 2017-06-07 株式会社リコー 圧電体薄膜素子および該圧電体薄膜素子の製造方法、並びに圧電アクチュエータ、液滴吐出ヘッドおよび液滴吐出装置
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置
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CN104505146B (zh) * 2014-11-20 2017-02-22 北京工业大学 一种具有纳米核壳及内晶型结构的介电复合材料及制备方法
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CN108400020B (zh) * 2018-03-06 2020-10-30 云南大学 一类层状钙钛矿型纳米氧化物的超级电容器电极材料
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WO2020066713A1 (ja) * 2018-09-28 2020-04-02 日本碍子株式会社 センサ素子
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Also Published As

Publication number Publication date
TW200602195A (en) 2006-01-16
EP1585180A3 (en) 2007-10-03
JP2011192975A (ja) 2011-09-29
CN1676331A (zh) 2005-10-05
CN100418768C (zh) 2008-09-17
US20050213020A1 (en) 2005-09-29
US7265483B2 (en) 2007-09-04
JP2005313628A (ja) 2005-11-10
EP1585180B1 (en) 2010-10-20
KR20060044810A (ko) 2006-05-16
TWI253392B (en) 2006-04-21
KR100777468B1 (ko) 2007-11-20
EP1585180A2 (en) 2005-10-12

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