DE602004029834D1 - Strukturbildungsverfahren - Google Patents

Strukturbildungsverfahren

Info

Publication number
DE602004029834D1
DE602004029834D1 DE602004029834T DE602004029834T DE602004029834D1 DE 602004029834 D1 DE602004029834 D1 DE 602004029834D1 DE 602004029834 T DE602004029834 T DE 602004029834T DE 602004029834 T DE602004029834 T DE 602004029834T DE 602004029834 D1 DE602004029834 D1 DE 602004029834D1
Authority
DE
Germany
Prior art keywords
shielding portion
pattern
sinõ
exposure
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004029834T
Other languages
English (en)
Inventor
Akio Misaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of DE602004029834D1 publication Critical patent/DE602004029834D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Glass Compositions (AREA)
  • Optical Filters (AREA)
DE602004029834T 2003-02-17 2004-02-03 Strukturbildungsverfahren Expired - Lifetime DE602004029834D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003037845 2003-02-17

Publications (1)

Publication Number Publication Date
DE602004029834D1 true DE602004029834D1 (de) 2010-12-09

Family

ID=32677653

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602004029834T Expired - Lifetime DE602004029834D1 (de) 2003-02-17 2004-02-03 Strukturbildungsverfahren
DE602004013474T Expired - Lifetime DE602004013474D1 (de) 2003-02-17 2004-02-03 Fotomaske

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE602004013474T Expired - Lifetime DE602004013474D1 (de) 2003-02-17 2004-02-03 Fotomaske

Country Status (7)

Country Link
US (3) US7147975B2 (de)
EP (2) EP1447711B1 (de)
KR (1) KR100593128B1 (de)
CN (2) CN100437903C (de)
AT (1) ATE394706T1 (de)
DE (2) DE602004029834D1 (de)
TW (1) TWI242799B (de)

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KR101087874B1 (ko) * 2009-06-29 2011-11-30 주식회사 하이닉스반도체 광학 근접 효과 보상 방법
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CN103019028B (zh) * 2012-12-14 2014-01-15 京东方科技集团股份有限公司 一种掩膜板及其制作方法
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KR20150028109A (ko) * 2013-09-05 2015-03-13 삼성디스플레이 주식회사 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법
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Also Published As

Publication number Publication date
CN100437903C (zh) 2008-11-26
US20070184359A1 (en) 2007-08-09
US20070141479A1 (en) 2007-06-21
DE602004013474D1 (de) 2008-06-19
EP1447711A3 (de) 2006-07-05
TWI242799B (en) 2005-11-01
US7147975B2 (en) 2006-12-12
KR20040074948A (ko) 2004-08-26
EP1947509A3 (de) 2008-08-06
KR100593128B1 (ko) 2006-06-26
US20040161678A1 (en) 2004-08-19
CN1523639A (zh) 2004-08-25
EP1947509A2 (de) 2008-07-23
US7569312B2 (en) 2009-08-04
EP1447711B1 (de) 2008-05-07
CN101446761A (zh) 2009-06-03
ATE394706T1 (de) 2008-05-15
EP1947509B1 (de) 2010-10-27
EP1447711A2 (de) 2004-08-18
US7524620B2 (en) 2009-04-28
TW200416829A (en) 2004-09-01

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