DE602004018415D1 - Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen - Google Patents
Germanium-Verbindungen, geeignet zur Verwendung in DampfphasenabscheidungsprozessenInfo
- Publication number
- DE602004018415D1 DE602004018415D1 DE602004018415T DE602004018415T DE602004018415D1 DE 602004018415 D1 DE602004018415 D1 DE 602004018415D1 DE 602004018415 T DE602004018415 T DE 602004018415T DE 602004018415 T DE602004018415 T DE 602004018415T DE 602004018415 D1 DE602004018415 D1 DE 602004018415D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- deposition processes
- compounds suitable
- germanium compounds
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002291 germanium compounds Chemical class 0.000 title 1
- 238000005019 vapor deposition process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
- C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46079103P | 2003-04-05 | 2003-04-05 | |
US51347603P | 2003-10-22 | 2003-10-22 | |
US51347503P | 2003-10-22 | 2003-10-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004018415D1 true DE602004018415D1 (de) | 2009-01-29 |
Family
ID=32854319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004018415T Expired - Lifetime DE602004018415D1 (de) | 2003-04-05 | 2004-04-01 | Germanium-Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen |
Country Status (8)
Country | Link |
---|---|
US (2) | US7141488B2 (de) |
EP (1) | EP1464725B1 (de) |
JP (1) | JP4714422B2 (de) |
KR (2) | KR20040086801A (de) |
CN (1) | CN100513636C (de) |
DE (1) | DE602004018415D1 (de) |
SG (1) | SG135953A1 (de) |
TW (1) | TWI314167B (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
WO2006005637A1 (de) * | 2004-07-15 | 2006-01-19 | Aixtron Ag | Verfahren zur abscheidung von silizium und germanium enthaltenden schichten |
US20060071213A1 (en) * | 2004-10-04 | 2006-04-06 | Ce Ma | Low temperature selective epitaxial growth of silicon germanium layers |
US7390360B2 (en) | 2004-10-05 | 2008-06-24 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
US7954140B2 (en) * | 2004-12-28 | 2011-05-31 | The Weather Channel, Llc | Methods for persisting, organizing, and replacing perishable browser information using a browser plug-in |
US20060172068A1 (en) * | 2005-01-28 | 2006-08-03 | Ovshinsky Stanford R | Deposition of multilayer structures including layers of germanium and/or germanium alloys |
US20070154637A1 (en) * | 2005-12-19 | 2007-07-05 | Rohm And Haas Electronic Materials Llc | Organometallic composition |
CN101473382A (zh) | 2006-05-12 | 2009-07-01 | 高级技术材料公司 | 相变化记忆体材料的低温沉积 |
WO2007138063A1 (en) * | 2006-05-26 | 2007-12-06 | Interuniversitair Microelektronica Centrum (Imec) | Method for reducing the surface roughness of a semiconductor substrate |
KR100757415B1 (ko) | 2006-07-13 | 2007-09-10 | 삼성전자주식회사 | 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법 |
KR100780865B1 (ko) * | 2006-07-19 | 2007-11-30 | 삼성전자주식회사 | 상변화막을 포함하는 반도체 소자의 형성 방법 |
CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
TWI471449B (zh) | 2007-09-17 | 2015-02-01 | Air Liquide | 用於gst膜沈積之碲前驅物 |
US20090087561A1 (en) * | 2007-09-28 | 2009-04-02 | Advanced Technology Materials, Inc. | Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films |
US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ge(Ⅱ)소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
US20100279011A1 (en) * | 2007-10-31 | 2010-11-04 | Advanced Technology Materials, Inc. | Novel bismuth precursors for cvd/ald of thin films |
JP5650880B2 (ja) * | 2007-10-31 | 2015-01-07 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 非晶質Ge/Te蒸着方法 |
US20090162973A1 (en) * | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
WO2009134989A2 (en) | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
WO2010055423A2 (en) | 2008-05-29 | 2010-05-20 | L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Tellurium precursors for film deposition |
US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
US7737534B2 (en) * | 2008-06-10 | 2010-06-15 | Northrop Grumman Systems Corporation | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer |
US20110180905A1 (en) * | 2008-06-10 | 2011-07-28 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
KR20120106888A (ko) | 2009-05-22 | 2012-09-26 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 저온 gst 방법 |
JP2011054935A (ja) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | ドーピング方法 |
US8410468B2 (en) * | 2009-07-02 | 2013-04-02 | Advanced Technology Materials, Inc. | Hollow GST structure with dielectric fill |
US8691668B2 (en) | 2009-09-02 | 2014-04-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dihalide germanium(II) precursors for germanium-containing film depositions |
US9950926B2 (en) * | 2009-11-09 | 2018-04-24 | The University Of Kentucky Research Foundation | Method for production of germanium nanowires encapsulated within multi-walled carbon nanotubes |
US20110124182A1 (en) * | 2009-11-20 | 2011-05-26 | Advanced Techology Materials, Inc. | System for the delivery of germanium-based precursor |
WO2011095849A1 (en) | 2010-02-03 | 2011-08-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
TW201132787A (en) | 2010-03-26 | 2011-10-01 | Advanced Tech Materials | Germanium antimony telluride materials and devices incorporating same |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
JP2015514106A (ja) * | 2012-04-05 | 2015-05-18 | ダウ コーニング コーポレーションDow Corning Corporation | メチルゲルマニウムクロリドを含む有機官能性化合物を調製するための方法 |
US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
US9214630B2 (en) | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
US9218963B2 (en) * | 2013-12-19 | 2015-12-22 | Asm Ip Holding B.V. | Cyclical deposition of germanium |
CN104392931B (zh) | 2014-12-03 | 2018-06-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN104407740B (zh) | 2014-12-03 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种触控面板及其制备方法、显示装置 |
CN104362298B (zh) | 2014-12-03 | 2018-11-06 | 京东方科技集团股份有限公司 | 一种电极片及其制备方法、储能装置 |
US20160181087A1 (en) * | 2014-12-19 | 2016-06-23 | Intermolecular Inc. | Particle removal with minimal etching of silicon-germanium |
EP3413334B1 (de) * | 2017-06-01 | 2020-09-09 | Evonik Operations GmbH | Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung |
EP3409678B1 (de) * | 2017-06-01 | 2021-04-21 | Evonik Operations GmbH | Neue halogengermanide und verfahren zu deren herstellung |
CN109592641B (zh) * | 2017-09-30 | 2021-12-07 | 天津大学 | 乙烯基修饰的锗化氢二维材料及其制备方法 |
CN112574250A (zh) * | 2020-12-18 | 2021-03-30 | 清远先导材料有限公司 | 一种二乙基二卤化锗的制备方法 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US626398A (en) * | 1899-06-06 | James v | ||
US1160355A (en) * | 1911-05-10 | 1915-11-16 | Charles D Young | Transfer mechanism. |
GB626398A (en) | 1946-04-16 | 1949-07-14 | British Thomson Houston Co Ltd | Improvements in and relating to methods of preparing organogermanium halides |
US2444270A (en) | 1946-04-16 | 1948-06-29 | Gen Electric | Method of preparing organogermanium halides |
US2759855A (en) * | 1953-08-24 | 1956-08-21 | Eagle Picher Co | Coated electronic device and method of making same |
US3211583A (en) * | 1961-09-19 | 1965-10-12 | Melpar Inc | Pyrolytic deposition of germanium |
US3470220A (en) | 1965-08-19 | 1969-09-30 | Monsanto Co | Germanium and tin compounds |
US3446824A (en) | 1965-12-10 | 1969-05-27 | Monsanto Co | Direct process for the preparation of organogermanium halides |
US3935040A (en) * | 1971-10-20 | 1976-01-27 | Harris Corporation | Process for forming monolithic semiconductor display |
DE2212295C3 (de) | 1972-03-14 | 1975-04-17 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten |
US3985590A (en) * | 1973-06-13 | 1976-10-12 | Harris Corporation | Process for forming heteroepitaxial structure |
US4506815A (en) | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
US4720561A (en) * | 1984-03-26 | 1988-01-19 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Preparation of metal alkyls |
US4812586A (en) * | 1985-04-09 | 1989-03-14 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Preparation of Group II metal alkyls |
JPS61281869A (ja) * | 1985-06-07 | 1986-12-12 | Canon Inc | 堆積膜形成法 |
JPH084070B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
JPS62186527A (ja) * | 1986-02-13 | 1987-08-14 | Canon Inc | 堆積膜形成法 |
JPH07107138B2 (ja) * | 1986-09-16 | 1995-11-15 | 株式会社日立製作所 | ゲルマニウムナフタロシアニン誘導体 |
JPH02225399A (ja) | 1988-11-11 | 1990-09-07 | Fujitsu Ltd | エピタキシャル成長方法および成長装置 |
JPH0323298A (ja) * | 1989-06-20 | 1991-01-31 | Fujitsu Ltd | 半導体結晶成長方法 |
DE69027496T2 (de) | 1989-09-26 | 1996-10-31 | Canon Kk | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
JPH0818902B2 (ja) * | 1989-11-02 | 1996-02-28 | シャープ株式会社 | 気相成長装置 |
US5316958A (en) * | 1990-05-31 | 1994-05-31 | International Business Machines Corporation | Method of dopant enhancement in an epitaxial silicon layer by using germanium |
US5259918A (en) * | 1991-06-12 | 1993-11-09 | International Business Machines Corporation | Heteroepitaxial growth of germanium on silicon by UHV/CVD |
US5502227A (en) | 1993-07-27 | 1996-03-26 | Cvd, Incorporated | Liquid indium source |
US5489550A (en) * | 1994-08-09 | 1996-02-06 | Texas Instruments Incorporated | Gas-phase doping method using germanium-containing additive |
US5924012A (en) | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
US6136725A (en) * | 1998-04-14 | 2000-10-24 | Cvd Systems, Inc. | Method for chemical vapor deposition of a material on a substrate |
US6214729B1 (en) | 1998-09-01 | 2001-04-10 | Micron Technology, Inc. | Metal complexes with chelating C-, N-donor ligands for forming metal-containing films |
FR2783254B1 (fr) * | 1998-09-10 | 2000-11-10 | France Telecom | Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus |
US6099903A (en) | 1999-05-19 | 2000-08-08 | Research Foundation Of State University Of New York | MOCVD processes using precursors based on organometalloid ligands |
EP1965431A2 (de) | 1999-06-22 | 2008-09-03 | Matsushita Electric Industrial Co., Ltd. | Heteroübergangsbipolartransistor und Verfahren zu dessen Herstellung |
US6238734B1 (en) | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
US7041170B2 (en) * | 1999-09-20 | 2006-05-09 | Amberwave Systems Corporation | Method of producing high quality relaxed silicon germanium layers |
DE60106675T2 (de) | 2000-05-31 | 2005-12-01 | Shipley Co., L.L.C., Marlborough | Verdampfer |
US20020163013A1 (en) * | 2000-09-11 | 2002-11-07 | Kenji Toyoda | Heterojunction bipolar transistor |
US6514886B1 (en) | 2000-09-22 | 2003-02-04 | Newport Fab, Llc | Method for elimination of contaminants prior to epitaxy |
JP3998408B2 (ja) | 2000-09-29 | 2007-10-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
EP1421607A2 (de) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Verbesserter prozess zur ablagerung von halbleiterfilmen |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
KR100434698B1 (ko) * | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
US20030111013A1 (en) | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
AU2002950405A0 (en) | 2002-07-26 | 2002-09-12 | Chirogen Pty Limited | Chemical methods |
JP5288707B2 (ja) * | 2003-03-12 | 2013-09-11 | エーエスエム アメリカ インコーポレイテッド | シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法 |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
CN101495672B (zh) * | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
-
2004
- 2004-03-30 JP JP2004100666A patent/JP4714422B2/ja not_active Expired - Fee Related
- 2004-04-01 DE DE602004018415T patent/DE602004018415D1/de not_active Expired - Lifetime
- 2004-04-01 EP EP04251949A patent/EP1464725B1/de not_active Expired - Fee Related
- 2004-04-02 KR KR1020040022757A patent/KR20040086801A/ko active Application Filing
- 2004-04-02 US US10/816,356 patent/US7141488B2/en not_active Expired - Fee Related
- 2004-04-02 SG SG200401871-9A patent/SG135953A1/en unknown
- 2004-04-02 CN CNB2004100951855A patent/CN100513636C/zh not_active Expired - Fee Related
- 2004-04-05 TW TW093109338A patent/TWI314167B/zh not_active IP Right Cessation
-
2006
- 2006-11-27 US US11/604,475 patent/US20070077733A1/en not_active Abandoned
-
2012
- 2012-02-20 KR KR1020120017138A patent/KR20120040164A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US20040197945A1 (en) | 2004-10-07 |
EP1464725B1 (de) | 2008-12-17 |
US20070077733A1 (en) | 2007-04-05 |
TW200424331A (en) | 2004-11-16 |
US7141488B2 (en) | 2006-11-28 |
JP2004349684A (ja) | 2004-12-09 |
SG135953A1 (en) | 2007-10-29 |
EP1464725A2 (de) | 2004-10-06 |
EP1464725A3 (de) | 2006-11-29 |
CN1654707A (zh) | 2005-08-17 |
KR20120040164A (ko) | 2012-04-26 |
TWI314167B (en) | 2009-09-01 |
JP4714422B2 (ja) | 2011-06-29 |
CN100513636C (zh) | 2009-07-15 |
KR20040086801A (ko) | 2004-10-12 |
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